KTD863L-GR-T9N-B [UTC]
Small Signal Bipolar Transistor,;
| 型号： | KTD863L-GR-T9N-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 开关 晶体管 |
| 文件： | 总3页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
TRIPLE DIFFUSED NPN
TRANSISTOR
DESCRIPTION
The UTC KTD863 is a triple diffused NPN transistor. it uses
UTC’s advanced technology to provide customers with high
collector-emitter breakdown voltage and high collector current
capability, etc.
The UTC KTD863 is suitable for voltage regulator, relay and
ramp driver, etc.
FEATURES
* High collector-emitter voltage
* High collector current capability
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
E
2
C
C
3
B
B
KTD863L-x-T9N-B
KTD863L-x-T9N-K
KTD863G-x-T9N-B
KTD863G-x-T9N-K
TO-92NL
TO-92NL
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
MARKING
UTC
KTD863
L: Lead Free
G: Halogen Free
TO-92NL
Data Code
www.unisonic.com.tw
1 of 3
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R211-020.a
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
60
V
5
V
DC
1
A
Continuous Collector Current
Pulse
ICP
2
1
A
Collector Power Dissipation
Junction Temperature
PC
W
°C
°C
TJ
150
Storage Temperature Range
TSTG
-55~+150
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC=1mA, IB=0
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
60
V
µA
μA
V
VCB=50V, IE=0
1
1
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
hFE1
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=50mA,VCE=2V
IC=1A,VCE=2V
0.15 0.5
0.85 1.2
320
V
60
30
DC Current Gain
hFE2
Transition Frequency
fT
IC=50mA, VCE=10V
VCB=10V, f=1MHz, IE=0
150
12
MHz
pF
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE1
RANK
O
Y
GR
RANGE
60~120
100~200
160~320
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R211-020.a
www.unisonic.com.tw
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R211-020.a
www.unisonic.com.tw
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