MCK100L-8-AD-AB3-R [UTC]
Silicon Controlled Rectifier;
| 型号： | MCK100L-8-AD-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MCK100
Preliminary
SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
1
SOT-89
DESCRIPTION
The UTC MCK100 is a sensitive gate silicon controlled rectifiers
reverse blocking thyristor. It provides the customers with high surge
current capability, high blocking voltage to 600 V and high switching
speed.
The UTC MCK100 is suitable for sensing and detection circuits
and high volume line – powered consumers applications
FEATURES
* High Surge Current Capability
* High Blocking Voltage to 600 V
* On–State Current Rating of 0.8 A RMS @ TC=80°C
* High Switching Speed (20 V/μs Minimum @ TC=110°C)
* Reliability and Uniformity
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin assignment
Package
SOT-89
Packing
Lead Free
Halogen Free
MCK100G-x-xx-AB3-R
1
2
3
MCK100L-x-xx-AB3-R
K
G
A
Tape Reel
Note: Pin assignment: G: Gate K: Cathode A: Anode
MARKING
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R601-041.a
MCK100
Preliminary
SCR
UNISONIC TECHNOLOGIES CO., LTD
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QW-R601-041.a
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MCK100
Preliminary
SCR
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
100
UNIT
V
MCK100-3
MCK100-4
MCK100-6
MCK100-8
Peak Repetitive Off-State Voltage(Note 2)
(TJ=-40 ~ 110°C, Sine Wave, 50 ~ 60Hz,
Gate Open)
VDRM
VRRM
200
400
600
Peak Gate Voltage – Reverse(TA=25°C, Pulse Width≤1.0μs)
On-Sate RMS Current (TC=80°C) 180°C Condition Angles
Peak Non-Repetitive Surge Current
VGRM
5.0
V
A
IT(RMS)
0.8
ITSM
10
A
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)
Peak Gate Current-Forward (TA=25°C, Pulse Width≤1.0μs)
Circuit Fusing Considerations (t=8.3 ms)
IGM
I2t
1.0
0.415
2
A
A2s
W
Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0μs)
Forward Average Gate Power (TA=25°C, t=8.3ms)
Operating Junction Temperature @ Rated VRRM and VDRM
Storage Temperature
PGM
PG(AV)
TJ
0.1
W
-40 ~ 125
-40 ~ 150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
200
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
75
ELECTRICAL CHARACTERISTICS(TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1)
ON CHARACTERISTICS
TC=25°C
IDRM
IRRM
VD=Rated VDRM and VRRM
,
10
μA
RGK=1kΩ
TC=110°C
100
Peak Forward On-State Voltage (Note 3)
VTM
IGT
ITM=1A Peak @ TA=25°C
1.7
200
5.0
10
V
Gate Trigger Current (Continuous dc) (Note2)
VAK=7.0V, RL=100Ω, TC=25°C
40
μA
TC=25°C
Holding Current (Note 3)
TC=-40°C
VAK=7V, initiating
0.5
IH
IL
mA
mA
V
current=20mA
TC=25°C
0.6
10
Latch Current
TC=-40°C
VAK=7V, IG=200μA
15
Gate Trigger Current
(continuous dc) (Note 2)
DYNAMIC CHARACTERISTICS
TC=25°C
TC=-40°C
0.62 0.8
1.2
VGT
VAK=7V, RL=100Ω
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω,
TJ=110°C
Critical Rate of Rise of Off-State Voltage
dV/dt
di/dt
20
35
V/μs
I
PK=20A, PW=10μs,
Critical Rate of Rise of On-State Current
50 A/μs
diG/dt=1A/μs, Igt=20mA
Notes: 1. RGK=1000Ω included in measurement.
2. Does not include RGK in measurement.
3. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R601-041.a
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MCK100
Preliminary
SCR
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
PARAMETER
Peak Repetitive Off Stat Forward Voltage
VDRM
IDRM
VRRM
IRRM
VTM
IH
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
+Current
Anode+
VTM
On State
IH
IRRM at VRRM
+Voltage
IDRM at VDRM
Reverse Blocking
Region (off state)
Forward Blocking
Region (off state)
Reverse Avalanche
Region Anode-
CLASSIFICATION OF IGT
RANK
B
C
AA
AB
14 ~ 21
AC
19 ~ 25
AD
23 ~ 52
RANGE
48 ~ 105
95 ~ 200
8 ~ 16
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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