MCR100-8AC [UTC]
Silicon Controlled Rectifier;型号: | MCR100-8AC |
厂家: | Unisonic Technologies |
描述: | Silicon Controlled Rectifier |
文件: | 总2页 (文件大小:19K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UTC MCR100
SCR
PLASTIC SILICON
CONTROLLED RECTIFIERS
DESCRIPTION
PNPN devices designed for high volume, line-
powered consumer applications such as relay and
lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package
which isreladily adaptable for use in automatic
insertion equipment.
1
DESCRIPTION
TO-92
*Sensitive Gate Trigger Current - 200mA Maximum
*Low Reverse and forward Blocking Current - 100mA
Maximum, Tc=125°C
*Low Holding Current – 5mA Maximum
*Glass-Passivated Surface for Reliability and
Uniformity
1:CATHODE 2:GATE 3:ANODE
*Also Available with TO-5 or TO-18 Lead Form
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
R£ cJC
MAX
75
UNIT
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R£ cJA
200
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Reverse Blocking Voltage
MCR100-4
SYMBOL
MAX
UNIT
V
VRRM
200
400
600
0.8
10
MCR100-6
MCR100-8
Forward Current RMS
IT(RMS)
ITSM
A
A
Peak Forward Surge Current, TA=25°C
(1/2 cycle, Sine Wave, 60Hz)
Circuit Fusing Considerations, TA=25°C
(t=1 to 8.3 ms)
I2t
0.415
A2s
Peak Gate Power – Forward, TA=25°C
Average Gate Power – Forward, TA=25°C
Peak Gate Current – Forward, TA=25°C(300ms, 120PPS)
Peak Gate Voltage - Reverse
Operating Junction Temperature Range @ Rated VRRM and
VDRM
PGM
PGF(AV)
IGFM
0.1
W
W
A
0.01
1
VGRM
Tj
5
V
-65 to +110
°C
Storage Temperature Range
Lead Solder Temperature
Tstg
-40 to +150
230
°C
°C
(<1/16” from case, 10 s max)
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
UTC MCR100
SCR
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER
Peak Forward Blocking Voltage
(Tc=125°C)
SYMBOL
MIN
MAX
UNIT
V
VDRM
MCR100-4
MCR100-6
MCR100-8
200
400
600
Peak Forward or Reverse Blocking Current
IDRM,IRRM
(Rated VDRM or VRRM)
Tc=25°C
10
100
1.7
mA
mA
V
Tc=125°C
Forward “ On” Voltage (Note1)
VTM
IGT
(ITM=1A peak @ TA=25°C)
Gate Trigger Current (continuous dc) (Note 2)
(Anode Voltage=7Vdc, RL=100W)
Gate Trigger Voltage (continuous dc)
(Anode voltage=7Vdc, RL=100W)
(Anode Voltage=Rated VDRM, RL=100W)
Holding Current
Tc=25 °C
200
mA
Tc=25 °C
Tc=-40 °C
Tc=125 °C
Tc=25 °C
VGT
0.8
1.2
V
0.1
IH
5
mA
(Anode Voltage=7Vdc, initiating current=20mA) Tc=-40 °C
10
Notes: 1. Forward current applied for 1 ms maximum duration, duty cycle <=1%
2. RGK current is not included in measurement.
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
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