MGBR10L120L-T27-R [UTC]
DUAL MOS GATED BARRIER RECTIFIER;型号: | MGBR10L120L-T27-R |
厂家: | Unisonic Technologies |
描述: | DUAL MOS GATED BARRIER RECTIFIER 测试 光电二极管 |
文件: | 总3页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L120
Preliminary
DIODE
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC MGBR10L120 is a dual mos gated barrier
rectifiers, it uses UTC’s advanced technology to provide
customers with low forward voltage drop and high switching
speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-277
Packing
Tape Reel
Lead Free
Halogen Free
MGBR10L120G-T27-R
1
2
3
MGBR10L120L-T27-R
A
K
A
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING
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QW-R204-054.a
MGBR10L120
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
VRM
RATINGS
120
UNIT
DC Blocking Voltage
V
V
V
A
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRWM
VRRM
IO
120
120
Average Rectified Output Current
TC=125°C
10
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
IFSM
160
A
TJ
-65~+150
-65~+150
°C
°C
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
73
13
θJC
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
V(BR)R
TEST CONDITIONS
IR=0.50mA
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
120
V
V
V
IF=10A, TJ=25°C
0.82
0.70
Forward Voltage Drop
VFM
IRM
IF=10A, TJ=125°C
VR=120V, TJ=25°C
VR=120V, TJ=125°C
400 μA
Leakage Current (Note 1)
30
mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-054.a
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MGBR10L120
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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UTC
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