MGBR10L200C [UTC]
DUAL MOS GATED BARRIER RECTIFIER;
| 型号： | MGBR10L200C |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL MOS GATED BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MGBR10L200C
Preliminary
DIODE
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC MGBR10L200C is a dual mos gated barrier rectifiers,
it uses UTC’s advanced technology to provide customers with low
forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Lead Free
Halogen Free
MGBR10L200CG-TA3-T
1
2
3
MGBR10L200CL-TA3-T
A
K
A
Note: Pin Assignment: A: Anode K: Cathode
MARKING
www.unisonic.com.tw
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R204-053.b
MGBR10L200C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
VRM
RATINGS
UNIT
DC Blocking Voltage
200
200
200
5
V
V
V
A
A
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRWM
VRRM
Per Leg
Average Rectified Output Current Per Device
Total
IO
10
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
IFSM
110
A
TJ
-65~+150
-65~+150
°C
°C
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62.5
2
θJC
ELECTRICAL CHARACTERISTICS (PER LEG) (TA =25°C unless otherwise specified.)
PARAMETER
SYMBOL
V(BR)R
TEST CONDITIONS
IR=0.50mA
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
200
V
V
V
IF=5A, TJ=25°C
0.9
Forward Voltage Drop
VFM
IRM
IF=5A, TJ=125°C
VR=200V, TJ=25°C
VR=200V, TJ=125°C
0.74
100 μA
Leakage Current (Note 1)
25
mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-053.b
www.unisonic.com.tw
MGBR10L200C
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R204-053.b
www.unisonic.com.tw
相关型号：
MGBR10L200CG-TA3-T
Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN
UTC
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