MGBR12L60G-T27-R [UTC]

MOS GATED BARRIER RECTIFIER;


型号：	MGBR12L60G-T27-R
厂家：	Unisonic Technologies
描述：	MOS GATED BARRIER RECTIFIER
文件：	总3页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO.,LTD

MGBR12L60

Preliminary

DIODE

MOS GATED BARRIER

RECTIFIER



DESCRIPTION

The UTC MGBR12L60 is a surface mount mos gatedbarrier

rectifier,it uses UTC’s advanced technology to provide customers

withlow forward voltage drop and high switching speed, etc.



FEATURES

* Low forward voltage drop

* High switching speed



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-277

Packing

Tape Reel

Lead Free

Halogen Free

MGBR12L60G-T27-R

MGBR12L60L-T27-R

Note: Pin Assignment: A: Anode K: Common Cathode

MGBR12L60L-T27-R

(1)Packing Type

(1) R: Tape Reel

(2) T27: TO-227

(2)Package Type

(3)Lead Free

(3) L: Lead Free, G: Halogen Free



MARKING INFORMATION

PACKAGE

MARKING

TO-277

www.unisonic.com.tw

1 of 3

QW-R601-193.a

MGBR12L60

Preliminary

DIODE



ABSOLUTE MAXIMUM RATINGS(T_A=25°C, unless otherwise specified)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load,derate current by 20%.

PARAMETER

SYMBOL

V_RM

RATINGS

UNIT

DC Blocking Voltage

WorkingPeak Reverse Voltage

Peak Repetitive Reverse Voltage

V_RWM

V_RRM

Average Rectified Output Current

T_C=140°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

Repetitive Peak Avalanche Power (1μs, 25°C)

Operating Junction Temperature

I_FSM

180

P_ARM

T_J

5000

°C

-65~+150

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS (Note 3)

PARAMETER

SYMBOL

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JA

θ_JC



ELECTRICAL CHARACTERISTICS(T_A=25°C,unless otherwise specified.)

PARAMETER

SYMBOL

V_(BR)R

TEST CONDITIONS

I_R=0.5mA

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

I_F=12A, T_J=25°C

I_F=12A, T_J=125°C

V_R=60V, T_J=25°C

V_R=60V, T_J=125°C

0.65

0.60

Forward Voltage Drop

V_FM

I_RM

300 μA

Leakage Current (Note 1)

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

3. Mounted on an FR4 PCB, single-sided copper, with 100 cm²copper pad area.

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R601-193.a

www.unisonic.com.tw

MGBR12L60

Preliminary

DIODE

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R601-193.a

www.unisonic.com.tw

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