MGBR40L100C [UTC]

DUAL MOS GATED BARRIER RECTIFIER;


型号：	MGBR40L100C
厂家：	Unisonic Technologies
描述：	DUAL MOS GATED BARRIER RECTIFIER
文件：	总3页 (文件大小：112K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MGBR40L100C

Preliminary

DIODE

DUAL MOS GATED BARRIER

RECTIFIER



DESCRIPTION

The UTC MGBR40L100C is a dual mos gated barrier rectifiers, it

uses UTC’s advanced technology to provide customers with low

forward voltage drop and high switching speed, etc.



FEATURES

* Low forward voltage drop

* High switching speed



SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220

Packing

Tube

Lead Free

Halogen Free

MGBR40L100CG-TA3-T

MGBR40L100CL-TA3-T

Note: Pin Assignment: A: Anode, K: Cathode

www.unisonic.com.tw

1 of 3

QW-R601-173.a

MGBR40L100C

Preliminary

DIODE



ABSOLUTE MAXIMUM RATINGS (PER LEG) (T_A=25°C unless otherwise specified)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

PARAMETER

SYMBOL

V_RM

RATINGS

100

UNIT

DC Blocking Voltage

Working Peak Reverse Voltage

Peak Repetitive Reverse Voltage

V_RWM

100

V_RRM

100

Per Leg

Average Rectified Output Current Per Device

Total

I_O

Non-Repetitive Peak Forward Surge Current 8.3ms Single

Half Sine-Wave Superimposed on Rated Load

Operating Junction Temperature

I_FSM

280

T_J

-65~+150

°C

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS (PER LEG)

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

62.5

θ_JC



ELECTRICAL CHARACTERISTICS (PER LEG) (T_A=25°C unless otherwise specified.)

PARAMETER

SYMBOL

V_(BR)R

TEST CONDITIONS

I_R=0.50mA

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 1)

100

I_F=20A, T_J=25°C

0.80

0.75

Forward Voltage Drop

V_FM

I_RM

I_F=20A, T_J=125°C

V_R=100V, T_J=25°C

V_R=100V, T_J=125°C

100 μA

Leakage Current (Note 1)

Notes: 1. Short duration pulse test used to minimize self-heating effect.

2. Thermal resistance junction to case mounted on heatsink.

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R601-173.a

www.unisonic.com.tw

MGBR40L100C

Preliminary

DIODE

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R601-173.a

www.unisonic.com.tw

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