MGBR5U40G-SMB-R [UTC]

MOS GATED BARRIER RECTIFIER;
MGBR5U40G-SMB-R
型号: MGBR5U40G-SMB-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

MOS GATED BARRIER RECTIFIER

文件: 总3页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
MGBR5U40  
Preliminary  
DIODE  
MOS GATED BARRIER  
RECTIFIER  
DESCRIPTION  
+
The UTC MGBR5U40 is a surface mount mos gated barrier  
rectifier, it uses UTC’s advanced technology to provide customers  
with low forward voltage drop and high switching speed, etc.  
-
SMB  
FEATURES  
* Ultra low forward voltage drop  
* High switching speed  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SMB  
Packing  
Lead Free  
Halogen Free  
MGBR5U40G-SMB-R  
1
2
MGBR5U40L-SMB-R  
K
A
Tape Reel  
Note: Pin Assignment: A: Anode K: Common Cathode  
MARKING INFORMATION  
PACKAGE  
MARKING  
Date Code  
U T C  
SMB  
L: Lead Free  
G: Halogen Free  
MGBR5U40  
Cathode Band for  
uni-directional Only  
www.unisonic.com.tw  
1 of 3  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R601-198.a  
MGBR5U40  
Preliminary  
DIODE  
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
PARAMETER  
SYMBOL  
VRM  
RATINGS  
UNIT  
DC Blocking Voltage  
40  
40  
40  
32  
5
V
V
V
V
A
Working Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
RMS Reverse Voltage  
VRWM  
VRRM  
VR(RMS)  
IO  
Average Rectified Output Current  
TC=140°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
Repetitive Peak Avalanche Power (1μs, 25°C)  
Operating Junction Temperature  
IFSM  
120  
A
PARM  
TJ  
5000  
W
°C  
°C  
-65~+150  
-65~+150  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RATINGS  
70  
UNIT  
°C/W  
Junction to Ambient  
θJA  
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
V(BR)R  
TEST CONDITIONS  
IR=0.5mA  
MIN TYP MAX UNIT  
Reverse Breakdown Voltage (Note 1)  
40  
V
V
V
IF=5A, TJ=25°C  
0.43  
0.39  
Instantaneous Forward Voltage  
VFM  
IRM  
IF=5A, TJ=125°C  
VR=40V, TJ=25°C  
VR=40V, TJ=125°C  
500 μA  
Leakage Current (Note 1)  
100 mA  
Notes: 1. Short duration pulse test used to minimize self-heating effect.  
2. Thermal resistance junction to case mounted on heatsink.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R601-198.a  
www.unisonic.com.tw  
MGBR5U40  
Preliminary  
DIODE  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R601-198.a  
www.unisonic.com.tw  

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