MJE13003DG-P-H-T92-K [UTC]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR;型号: | MJE13003DG-P-H-T92-K |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压 开关 |
文件: | 总4页 (文件大小:132K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13003D-P is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
3
MJE13003DL-P-x-T92-B
MJE13003DL-P-x-T92-K
MJE13003DL-P-x-T92-R
MJE13003DG-P-x-T92-B
MJE13003DG-P-x-T92-K
MJE13003DG-P-x-T92-R
TO-92
TO-92
TO-92
E
E
E
B
B
B
Tape Box
Bulk
Tape Reel
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Copyright © 2013 Unisonic Technologies Co., Ltd
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MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector- Emitter Voltage (VBE =0)
Collector-Emitter Voltage (IB =0)
Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)
Collector Current
700
400
9
V
V
1.5
A
Collector Peak Current (tP<5ms)
Base Current
ICM
3
A
IB
0.75
1.5
A
Base Peak Current (tP<5ms)
IBM
A
TA=25°C
1.1
W
W
°C
°C
Power Dissipation
TC=25°C
PD
1.5
Junction Temperature
Storage Temperature
TJ
150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVEBO
TEST CONDITIONS
IE =10mA, IC=0
MIN TYP MAX UNIT
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
9
18
V
V
VCEO(SUS) IC=10mA, IB=0
450
ICES
VCE =700V,VBE =0
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=1.5 A, IB=0.5 A
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=0.4A, VCE =5 V
IC=1 A, VCE =5 V
1
0.5
1
mA
V
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
VCE(SAT)
V
3
V
1
V
VBE(SAT)
1.2
57
30
1
V
hFE1
hFE2
tR
14
5
DC Current Gain
Rise Time
μs
μs
μs
VCC=125 V, IC=1 A,
IB1=0.2 A, IB2=-0.2 A
tP=25μs
Resistive Load
Storage Time
Fall Time
tS
4
tF
0.7
IC=1 A, IB1=0.2 A,VBE =-5 V,
L=50mH, VCLAMP=300V
IF=0.5 A
Inductive Load Storage Time
Diode Forward Voltage
tS
0.8
μs
VF
1.5
V
Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
F
G
H
RANGE
14 ~ 22
21 ~ 27
26 ~ 32
31 ~ 37
36 ~ 42
41 ~ 47
46 ~ 52
51 ~ 57
UNISONIC TECHNOLOGIES CO., LTD
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MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
TEST CIRCURTS
Inductive Load Switching Test Circuit
(3)
IC
(1)
VCE
IB
RBB(2)
VClamp
VCC
-
VBB
+
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
IC
(1)
RC(2)
VCE
IB
RBB(2)
-
VBB
VCC
+
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
UNISONIC TECHNOLOGIES CO., LTD
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MJE13003D-P
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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