MJE13003L-4-D-T6C-A-K [UTC]

Power Bipolar Transistor;


型号：	MJE13003L-4-D-T6C-A-K
厂家：	Unisonic Technologies
描述：	Power Bipolar Transistor
文件：	总8页 (文件大小：341K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13003

NPN SILICON TRANSISTOR

NPN SILICON POWER

TRANSISTOR

DESCRIPTION

These devices are designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical. They

are particularly suited for 115 and 220V applications in switch

mode.

FEATURES

* Reverse biased SOA with inductive load @ Tc=100°C

* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C

Typical tc = 290ns @ 1A, 100°C.

* 700V blocking capability

APPLICATIONS

* Switching regulator’s, inverters

* Motor controls

* Solenoid/relay drivers

* Deflection circuits

ORDERING INFORMATION

Ordering Number

Lead Free

MJE13003L-x-x-T60-K

Pin Assignment

Package

TO-126

Packing

Normal

MJE13003-x-x-T60-K

Halogen-Free

MJE13003G-x-x-T60-K

Bulk

MJE13003-x-x-T6C-A-K MJE13003L-x-x-T6C-A-K MJE13003G-x-x-T6C-A-K TO-126C

MJE13003-x-x-T6C-F-K MJE13003L-x-x-T6C-F-K MJE13003G-x-x-T6C-F-K TO-126C

Bulk

MJE13003-x-x-T92-B

MJE13003-x-x-T92 -K

MJE13003-x-x-T92 -R

MJE13003-x-x-T9L-B

MJE13003-x-x-T9L -K

MJE13003-x-x-T9L -R

MJE13003-x-x-TA3-T

MJE13003-x-x-TM3-T

MJE13003-x-x-TN3-R

MJE13003-x-x-TN3-T

MJE13003L-x-x-T92-B

MJE13003L-x-x-T92-K

MJE13003L-x-x-T92-R

MJE13003L-x-x-T9L-B

MJE13003L-x-x-T9L-K

MJE13003L-x-x-T9L-R

MJE13003L-x-x-TA3-T

MJE13003L-x-x-TM3-T

MJE13003L-x-x-TN3-R

MJE13003L-x-x-TN3-T

MJE13003G-x-x-T92-B

MJE13003G-x-x-T92-K

MJE13003G-x-x-T92-R

MJE13003G-x-x-T9L-B

MJE13003G-x-x-T9L-K

MJE13003G-x-x-T9L-R

MJE13003G-x-x-TA3-T

MJE13003G-x-x-TM3-T

MJE13003G-x-x-TN3-R

MJE13003G-x-x-TN3-T

TO-92

Tape Box

Bulk

TO-92

Tape Reel

Tape Box

Bulk

TO-92L

TO-220

TO-251

TO-252

Tape Reel

Tube

Tape Reel

Tube

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ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

400

700

UNIT

Collector-Emitter Voltage

Collector-Base Voltage

Emitter Base Voltage

V_CEO(SUS)

V_CBO

V_EBO

I_C

Continuous

Peak (1)

1.5

Collector Current

Base Current

I_CM

Continuous

Peak (1)

I_B

0.75

1.5

I_BM

Continuous

Peak (1)

I_E

2.25

4.5

Emitter Current

I_EM

TO-126 / TO-126C

TO-92 / TO-92L

TO-220

1.4

°C

1.1

Total Power Dissipation (T_C=25°C)

P_D

TO-251/ TO-252

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note)

Collector-Emitter Sustaining Voltage

V_CEO(SUS)I_C=10 mA , I_B=0

400

T_C=25°C

_CEO=Rated Value,

_BE(OFF)=1.5 V

Collector Cutoff Current

I_CEO

I_EBO

T_C=100°C

Emitter Cutoff Current

V_EB=9 V, I_C=0

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

See Fig.6

Clamped Inductive SOA with base reverse biased

ON CHARACTERISTICS (Note)

RB_SOA

h_FE1

h_FE2

I_C=0.5A, V_CE=5V

DC Current Gain

I_C=1A, V_CE=5V

I_C=0.5A, I_B=0.1A

0.5

I_C=1A, I_B=0.25A

Collector-Emitter Saturation Voltage

V_CE(SAT)

I_C=1.5A, I_B=0.5A

I_C=1A, I_B=0.25A, T_C=100°C

I_C=0.5A, I_B=0.1A

Base-Emitter Saturation Voltage

V_BE(SAT)

I_C=1A, I_B=0.25A

1.2

1.1

I_C=1A, I_B=0.25A, T_C=100°C

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

Output Capacitance

f_T

I_C=100mA, V_CE=10V, f=1MHz

V_CB=10V, I_E=0, f=0.1MHz

MHz

Cob

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t_D

t_R

t_S

t_F

0.05 0.1 μs

Rise Time

V_CC=125V, I_C=1A, I_B1=I_B2=0.2A,

t_P=25μs, Duty Cycle≤1%

0.5

μs

Storage Time

Fall Time

0.4 0.7 μs

Inductive Load, Clamped (Table 1)

Storage Time

t_STG

t_C

1.7

0.29 0.75 μs

0.15 μs

μs

I_C=1A, Vclamp=300V, I_B1=0.2A,

Crossover Time

V_BE(OFF)=5Vdc, T_C=100°C

Fall Time

t_F

Note: Pulse Test : PW=300μs, Duty Cycle≤2%

CLASSIFICATION OF h_FE1

RANK

RANGE

14 ~ 22

21 ~ 27

26 ~ 32

31 ~ 37

36 ~ 42

41 ~ 47

46 ~ 52

51 ~ 57

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APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance

Reverse Bias Safe Operating Area and Inductive Switching

Resistive

Switching

+125V

TUT

SCOPE

R^B

-4.0V

Coil Data :

V_CC=20V

Ferroxcube core #6656

Vclamp=300V

GAP for 30 mH/2 A

Lcoil=50mH

_CC=125V

R_C=125Ω

D1=1N5820 or

Equiv.

Full Bobbin ( ~ 200 Turns) #20

R_C=47Ω

Output Waveforms

+10.3 V

25μS

-8.5V

tr, tf<10ns

Duty Cycly=1.0%

R^Band Rc adjusted

for desired I^Band Ic

Table 2. Typical Inductive Switching Performance

I_CPK

t_sv

(A)

(°C)

t_RV

t_FI

(µs)

t_TI

(µs)

V_CLAMP

(µs) (µs)

90% Ic

t_FI

90% Vclamp

t_RV

t_TI

I_C

0.35

0.40

t_sv

0.30

0.36

1.3 0.23

1.6 0.26 0.30

100

0.5

1.5 0.10 0.14 0.05 0.16

100 1.7 0.13 0.26 0.06 0.29

V_CE

I_B

10% V

^CLAMP10%

I_CPK

2% Ic

90% I_B1

1.8 0.07 0.10 0.05 0.16

0.22 0.08 0.28

100

1.5

0.08

Note: All Data Recorded in the Inductive Switching

Circuit in Table 1

Time

Fig.1 Inductive Switching Measurements

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SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies

and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be

made on each waveform to determine the total switching time. For this reason, the following new terms have been

defined.

_SV= Voltage Storage Time, 90% I_B1to 10% Vclamp

_RV= Voltage Rise Time, 10 ~ 90% Vclamp

t_FI= Current Fall Time, 90 ~ 10% I_C

_TI= Current Tail, 10 ~ 2% I_C

t_C= Crossover Time, 10% Vclamp to 10% I_C

For the designer, there is minimal switching loss during storage time and the predominant switching power losses

occur during the crossover interval and can be obtained using the standard equation:

P_SWT= 1/2 V_CCI_C(t_C) f

In general, t_RV+ t_FI≈ t_C. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a

benchmark for designers. However, for designers of high frequency converter circuits, the user oriented

specifications which make this transistor are the inductive switching speeds (t_Cand t_SV) which are guaranteed at

100°C.

RESISTIVE SWITCHING PERFORMANCE

Vcc=125V

Ic/I^B=5

T^J=25°C

Vcc=125V

Ic/I^B=5

T^J=25°C

0.7

0.5

0.3

0.2

0.7

tD @ VBE(OFF)=5V

0.1

0.07

0.05

0.5

0.3

0.2

0.03

0.02

0.1

0.07 0.1

0.2 0.3

0.7

0.2

0.3

0.02

0.03 0.05

0.5

0.03

0.05

0.07 0.1

0.5 0.7

0.02

Collector Current, IC (A)

Fig.2 Turn-On Time

Collector Current, IC (A)

Fig.3 Turn-Off Time

Fig.4 Thermal Response

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SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I_C-V_CElimits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Fig.5 is based on T_C= 25°C; T_J(PK)is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when T_C≥25°C. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at the voltages shown on Fig.5.

T_J(PK)may be calculated from the data in Fig.4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,

with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as RB_SOA( Reverse Bias

Safe Operating Area) and represents the voltage-current conditions during reverse biased turn-off. This rating is

verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.6 gives RB_SOA

characteristics.

The Safe Operating Area of Fig.5 and 6 are specified ratings (for these devices under the test conditions shown.)

Fig.5 Active Region Safe Operating Area

Fig.6 Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS

DC Current Gain

Collector Saturation Region

TJ=25℃

TJ=150℃

1.6

25℃

Ic=0.1A

1.2

0.8

0.4

0.3A

0.5A

1A 1.5A

-55℃

VCE=2V

- - - - - -V^CE=5V

0.03 0.05 0.07 0.1

0.2 0.3

0.5 0.7

0.05 0.1 0.2

0.5

0.002

0.005 0.01 0.02

0.02

Collector Current,IC (A)

Base Current, IB (A)

Base-Emitter Voltage

Collector-Emitter Saturation Region

1.4

1.2

0.35

0.3

VBE(SAT) @ IC/IB=3

- - - - - -V^BE(ON)@ VCE=2V

0.25

0.2

Ic/IB=3

0.8

0.6

TJ=-55℃

25℃

TJ=-55℃

0.15

0.1

25℃

150℃

0.05

0.4

0.02

0.03

0.07 0.1

0.2 0.3

0.5 0.7

0.03

0.2 0.3

0.5 0.7

0.05

0.07 0.1

0.02

Collector Current,IC (A)

Collector Current, IC (A)

Capacitance

Cib

Collector cut-off Region

500

VCE=250V

300

200

TJ=25℃

TJ=150℃

100

125℃

100℃

75℃

50℃

Cob

25℃

FORWARD

+0.2

+0.4

REVERSE

-1

-0.4

200 500 1000

100

0.2

0.5

10 20 50

-0.2

+0.6

0.1

Base-Emitter Voltage, VBE (V)

Reverse Voltage, VR (V)

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TYPICAL CHARACTERISTICS(Cont.)

100

100 125 150

Ta (°C)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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