MJE13005C(TO-220) [UTC]
Transistor;
| 型号： | MJE13005C(TO-220) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V
SWITCHMODE.
1
FEATURES
TO-220
* VCEO (sus) 400 V
* Reverse Bias SOA with Inductive Loads @ TC = 100℃
* Inductive Switching Matrix 2 to 4 Amp, 25 and 100℃
. . . tc @ 3A, 100℃ is 180 ns (Typ)
* 700 V Blocking Capability
* SOA and Switching Applications Information
1: BASE 2: COLLECTOR 3: EMITTER
APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO (sus)
400
V
V
V
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current- Continuous
- Peak (1)
VCEV
VEBO
Ic
ICM
IB
IBM
IE
IEM
700
9
4
8
2
4
6
12
2
16
75
600
A
A
A
Base Current- Continuous
- Peak (1)
Emitter Current- Continuous
- Peak (1)
Total Power Dissipation @ Ta=25℃
Derate above 25℃
Total Power Dissipation @ TC=25℃
Derate above 25℃
W
PD
mW/℃
W
PD
mW/℃
℃
Operating and Storage Junction Temperature Range
Tj , Tstg
-65 ~ +150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RθJA
RθJC
MAX
62.5
1.67
UNIT
℃/W
℃/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
℃
TL
275
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
VCEO (SUS) Ic=10mA , IB=0
400
V
VCEV=Rated Value, VBE(off)=1.5 V
1
ICEV
IEBO
VCEV=Rated Value, VBE(off)=1.5V,
mA
mA
Tc=100℃
5
1
Emitter Cutoff Current
VEB=9V, Ic=0
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
Is/b
See Figure 11
See Figure 12
RBSOA
*ON CHARACTERISTICS (1)
DC Current Gain
hFE1
hFE2
Ic=1A, VCE=5V
Ic=2A, VCE=5V
10
8
60
40
Collector-Emitter Saturation Voltage
Ic=1A, IB=0.2A
0.5
Ic=2A, IB=0.5A
0.6
VCE (sat)
VBE (sat)
V
Ic=4A, IB=1A
1
1
1.2
1.6
1.5
Ic=2A, IB=0.5A, Ta=100℃
Base-Emitter Saturation Voltage
Ic=1A, IB=0.2A
Ic=2A, IB=0.5A
V
Ic=2A, IB=0.5A, Tc=100℃
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
fT
Cob
Ic=500mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
MHz
pF
65
μs
μs
μs
μs
td
tr
ts
tf
Vcc=125V, Ic=2A, IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
0.025 0.1
Rise Time
Storage Time
Fall Time
0.3
1.7
0.4
0.7
4
0.9
* Pulse Test: Pulse Width=300μs, Duty Cycle≤2%
CLASSIFICATION OF HFE2
RANK
A
B
C
D
E
F
RANGE
8 ~ 16
15 ~ 21
20 ~ 26
25 ~ 31
30 ~ 36
35 ~ 40
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
TABLE 1.TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITHCING
+5V
Vcc
33
1N4933
MJE210
L
MR826*
0.001μF
+125V
33 1N4933
5V
Vclamp
Rc
Ic
Pw
2N2222
RB
1k
TUT
DUTY CYCLE≦10%
SCOPE
RB
D1
-4.0V
68
*SELECTED FOR≧1kV
tr, tf≦10ns
1k
+5V
IB
5.1k
51
VCE
1k
T.U.T.
1N4933
270
2N2905
47
MJE200
0.02μF
100
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1/2W
-VBE(off)
Vcc=125V
Coil Data :
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
Lcoil=200μH
Vcc=20V
Vclamp=300V
Rc=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
OUTPUT WAVEFORMS
tf CLAMPED
Ic
tf UNCLAMPED＞t2
+10 V
0
25μS
Ic(pk)
t1 Adjusted to
Obtain Ic
t
t1
tf
Lcoil(Icpk)
Vcc
Test Equipment
Scope-Tektronics
475 or Equivalent
-8V
t1=
VCE
tr, tf<10ns
VCE or
Vclamp
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Lcoil(Icpk)
Vclamp
t2=
t
TIME
t2
RESISTIVE SWITCHING PERFORMANCE
Figure 1. Turn-On Time
1
Figure 2. Turn-Off Time
10
5
Vcc=125V
Ic/IB=5
Vcc=125V
ts
0.5
Ic/IB=5
Tj=25℃
Tj=25℃
tr
0.2
0.1
2
1
0.5
0.05
td @ VBE(off)=5V
0.3
0.2
tf
0.02
0.01
0.0
0.1
0.0
0.2
0.4
1
4
0.1
2
0.2
0.5
1
2
4
0.1
4
4
COLLECTOR CURRENT, IC (AMP)
COLLECTOR CURRENT, IC (AMP)
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
Figure 3. Typical Thermal Response [ZθJC(t)]
1
0.7
D=0.5
0.5
0.3
0.2
0.2
0.1
0.1
P (PK)
0.05
ZθJC(t)=r(t) RθJC
0.07
0.05
RθJC=1.67℃/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t1 t2
0.03
0.02
READ TIME AT t1
Tj(pk)-TC=P(pk) ZθJC(t)
0.01
SINGLE PULSE
DUTY CYCLE, D=t1/t2
0.01
0.01
10
0
20
0
50
0
0.02
0.05
0.1
0.2
1
2
5
10
20
50
1k
0.5
TIME, t (ms)
Figure 4. Forward Bias Safe Operating Area
Figure 5. Reverse Bias Switching Safe Operating Area
10
5
4
Tc≧100℃
IB1=2.0A
500μs
2
1
3
5 ms
dc
0.5
2
1
0
VBE(off)=9V
1ms
0.2
0.1
0.05
UTC MJE13005
5V
3V
1.5V
0.02
0.01
UTC MJE13005
10
20
30
50 70 100
300
500
7
200
0
100
200
300
400
500
600
700 800
5
400
COLLECTOR-EMITTER VOLTAGE, VCE (VOLTS)
COLLECTOR-EMITTER CLAMP VOLTAGE,
VCE (VOLTS)
Figure 6. Forward Bias Power Derating
1
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
0.2
0
THERMAL
DERATING
100
140
160
20
40
60
80
120
CASE TEMPERATURE, TC (℃)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25℃; Tj(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25℃. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 4 may be found at any
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
case temperature by using the appropriate curve on Figure 6.
Tj(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete
RBSOA characteristics.
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Tj=25℃
100
70
2
1.6
1.2
0.8
0.4
0
Tj=150℃
25℃
50
2A
Ic=1A
3A
4A
30
20
-55℃
10
7
VCE=2V
- - - - - -VCE=5V
5
0.06
0.1
0.2
0.4 0.6
1
2
4
0.03 0.05
0.1
0.2 0.3
0.5 0.7
1
2
3
0.04
BASE CURRENT, IB (AMP)
COLLECTOR CURRENT, IC (AMP)
Figure 9. Base-Emitter Voltage
VBE(sat) @ IC/IB=4
Figure 10. Collector-Emitter Saturation Voltage
Ic/IB=4
1.3
1.1
0.9
0.55
- - - - - -VBE(on) @ VCE=2V
0.45
Tj=-55℃
25℃
Tj=-55℃
25℃
0.35
0.25
0.15
0.05
0.7
0.5
0.3
25℃
150℃
150℃
0.06
0.1
0.2
0.4 0.6
1
2
0.06
0.1
0.2
0.4
0.6
1
2
0.04
4
0.04
4
COLLECTOR CURRENT, IC (AMP)
COLLECTOR CURRENT, IC (AMP)
5
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
UTC MJE13005
NPN EPITAXIAL SILICON TRANSISTOR
Figure 11. Collector Cutoff Region
VCE=250V
Tj=150℃
Figure 12. Capacitance
10k
1k
2k
Cib
1k
700
500
100
125℃
100℃
75℃
300
200
10
1
100
70
50
50℃
25℃
30
Cob
FORWARD
+0.2 +0.4
REVERSE
0.1
20
-0.2
0
+0.6
0.3
0.5
1
3
5
10
30
50
100
300
-0.4
BASE-EMITTER VOLTAGE, VBE
REVERSE VOLTAGE, VR (VOLTS)
(VOLTS)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
6
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-018,C
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