MJE13005D-K [UTC]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR;型号: | MJE13005D-K |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压 开关 |
文件: | 总3页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13005D-K
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN POWER
TRANSISTOR
DESCRIPTION
The UTC MJE13005D-K is a high voltage fast-switching NPN
power transistor. It is characterized by high breakdown voltage,
high current capability, high switching speed and high reliability.
The UTC MJE13005D-K is intended to be used in
energy-saving light, electronic ballast, high frequency switching
power supply, high frequency power transform or common power
amplifier, etc.
FEATURES
* High Breakdown Voltage
* High Current Capability
* High Switching Speed
* High Reliability
* RoHS-Compliant Product
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-251
Packing
Tube
Lead Free
Halogen Free
1
2
3
MJE13005DL-K-x-TM3-T
MJE13005DG-K-x-TM3-T
B
C
E
MJE13005DL-K-x-TM3-T
(1) T: Tube
(1)Packing Type
(2)Package Type
(3)Rank
(2) TM3: TO-251
(3) x: refer to Classification of hFE1
(4) L: Lead Free, G: Halogen Free
(4)Lead Free
www.unisonic.com.tw
1 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R213-021.b
MJE13005D-K
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATING
UNIT
V
Collector- Emitter Voltage (VBE =0)
Collector-Emitter Voltage (IB =0)
Emitter-Base Voltage
700
400
V
9
V
DC
4
A
Collector Current
Base Current
Pulse
DC
ICP
8
A
IB
2
A
Pulse
IBP
4
44
A
Power Dissipation
PD
W
°C
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
100
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.87
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector -Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
IC=10mA, IB=0
IC=1mA, IB=0
400
700
9
V
V
IE =1mA, IC=0
V
VCB=700V, IE=0
VCE=400V,IB=0
VEB=9V, IC=0
100
50
μA
μA
μA
Collect Cut-off Current
ICEO
Emitter Cut-off Current
IEBO
10
hFE1
VCE =5V, IC=500mA
VCE =5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
15
5
50
DC Current Gain
hFE2
0.5
0.6
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE
V
IC=2A, IB=0.5A, TC=100°C
IC=2A, IB=0.5A
1
VBE(SAT)
1.6
0.7
4
V
μs
Fall Time
Resistive Load
tF
tS
VCC=24V, IC=2A, IB1=-IB2=0.4A
Storage Time
μs
Current Gain Bandwidth Product
Diode Forward Voltage
fT
VCE=10V, IC=0.5A
IF=1A
4
MHZ
V
VF
1.5
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
RANGE
15 ~ 20
20 ~ 25
25 ~ 30
30 ~ 40
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R213-021.b
www.unisonic.com.tw
MJE13005D-K
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R213-021.b
www.unisonic.com.tw
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