MJE13005DL-A-T60-K [UTC]

Power Bipolar Transistor;


型号：	MJE13005DL-A-T60-K
厂家：	Unisonic Technologies
描述：	Power Bipolar Transistor 局域网开关晶体管
文件：	总3页 (文件大小：117K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13005D

Preliminary

NPN SILICON TRANSISTOR

HIGH VOLTAGE

FAST-SWITCHING NPN POWER

TRANSISTOR



DESCRIPTION

The UTC MJE13005D is a high voltage fast-switching NPN

power transistor. It is characterized by high breakdown voltage,

high current capability, high switching speed and high reliability.

The UTC MJE13005D is intended to be used in energy-saving

light, electronic ballast, high frequency switching power supply, high

frequency power transform or common power amplifier, etc.



FEATURES

* High Breakdown Voltage

* High Current Capability

* High Switching Speed

* High Reliability

* RoHS-Compliant Product



INTERNAL SCHEMATIC DIAGRAM

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

MJE13005DL-x-TA3-T

MJE13005DL-x-T60-K

MJE13005DG-x-TA3-T

MJE13005DG-x-T60-K

TO-220

TO-126

Tube

Bulk

MJE13005DL-x-TA3-T

(1) T: Tube, K: Bulk

(2) TA3: TO-220, T60: TO-126

(1)Packing Type

(2)Package Type

(3)Rank

(3) x: refer to Classification of h_FE1

(4) G: Halogen Free, L: Lead Free

(4)Lead Free

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MJE13005D

Preliminary

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CES

V_CEO

V_EBO

I_C

RATING

UNIT

Collector- Emitter Voltage (V_BE=0)

Collector-Emitter Voltage (I_B=0)

Emitter-Base Voltage

700

400

Collector Current

Base Current

Pulse

I_CP

I_B

Pulse

TO-220

TO-126

I_BP

Power Dissipation

P_D

Storage Temperature

T_STG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.



THERMAL DATA

PARAMETER

SYMBOL

RATING

62.5

UNIT

°C/W

TO-220

TO-126

TO-220

TO-126

Junction to Ambient

Junction to Case

θ_JA

1.67

θ_JC

°C/W

2.78



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

BV_CEO

BV_CBO

BV_EBO

I_CBO

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

Collector -Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collect Cut-off Current

I_C=10mA, I_B=0

I_C=1mA, I_B=0

400

700

I_E=1mA, I_C=0

V_CB=700V, I_E=0

V_CE=400V,I_B=0

V_EB=9V, I_C=0

100

μA

Collect Cut-off Current

I_CEO

Emitter Cut-off Current

I_EBO

h_FE1

V_CE=5V, I_C=500mA

V_CE=5V, I_C=2A

I_C=1A, I_B=0.2A

I_C=2A, I_B=0.5A

I_C=4A, I_B=1A

DC Current Gain

h_FE2

0.5

0.6

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE

I_C=2A, I_B=0.5A, T_C=100°C

I_C=2A, I_B=0.5A

V_BE(SAT)

1.6

0.7

μs

Fall Time

Resistive Load

t_F

t_S

V_CC=24V, I_C=2A, I_B1=-I_B2=0.4A

Storage Time

μs

Current Gain Bandwidth Product

Diode Forward Voltage

f_T

V_CE=10V, I_C=0.5A

I_F=1A

MH_Z

V_F

1.5



CLASSIFICATION OF h_FE1

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

30 ~ 40

40 ~ 50

UNISONIC TECHNOLOGIES CO., LTD

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MJE13005D

Preliminary

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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