MJE13005G-E-T6S-K [UTC]

NPN SILICON POWER TRANSISTORS;


型号：	MJE13005G-E-T6S-K
厂家：	Unisonic Technologies
描述：	NPN SILICON POWER TRANSISTORS
文件：	总10页 (文件大小：418K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13005

NPN SILICON TRANSISTOR

NPN SILICON POWER

TRANSISTORS



DESCRIPTION

These devices are designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220 V SWITCHMODE.



FEATURES

* V_CEO(SUS)= 400 V

* Reverse bias SOA with inductive loads @ T_C= 100°С

* Inductive switching matrix 2 to 4 Amp, 25 and 100°С

t_C@ 3A, 100°С is 180 ns (Typ)

* 700V blocking capability

* SOA and switching applications information



APPLICATIONS

* Switching regulator’s, inverters

* Motor controls

* Solenoid/Relay drivers

* Deflection circuits



ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

MJE13005L-x-TA3-T

MJE13005L-x-TF3-T

MJE13005L-x-TM3-T

MJE13005L-x-TN3-R

MJE13005L-x-TND-R

MJE13005L-x-T2Q-T

MJE13005L-x-TQ3-T

MJE13005L-x-TQ3-R

MJE13005L-x-T60-K

MJE13005L-x-T6S-K

MJE13005G-x-TA3-T

MJE13005G-x-TF3-T

MJE13005G-x-TM3-T

MJE13005G-x-TN3-R

MJE13005G-x-TND-R

MJE13005G-x-T2Q-T

MJE13005G-x-TQ3-T

MJE13005G-x-TQ3-R

MJE13005G-x-T60-K

MJE13005G-x-T6S-K

TO-220

TO-220F

TO-251

TO-252

TO-252D

TO-262

TO-263

TO-126

TO-126S

Tube

Tape Reel

Tube

Tape Reel

Bulk

(1) T: Tube, K: Bulk, R: Tape Reel

MJE13005L-x-TA3-T

(2) TA3: TO-220, TF3: TO-220F,TM3: TO-251,

(2) TN3: TO-252, TND: TO-252D, T2Q: TO-262,

(2) TQ3: TO-263, T60: TO-126, T6S: TO-126S

(3) x: refer to Classification of h_FE1

(1)Packing Type

(2)Package Type

(3)Rank

(4)Lead Free

(4) L: Lead Free, G: Halogen Free

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NPN SILICON TRANSISTOR

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MARKING INFORMATION

PACKAGE

TO-220

MARKING

TO-220F

TO-251

TO-252

TO-252D

TO-262

TO-263

TO-126

TO-126S

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

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CEO(SUS)

V_CES

V_CBO

V_EBO

I_C

RATINGS

UNIT

Collector-Emitter Voltage

Collector-Emitter Voltage (V_BE=0)

Collector-Base Voltage

400

700

Emitter Base Voltage

Continuous

Peak (1)

Collector Current

Base Current

I_CM

Continuous

Peak (1)

I_B

I_BM

Continuous

Peak (1)

I_E

Emitter Current

I_EM

TO-126/TO-126S

TO-220F

TO-251/TO-252

TO-252D

Power Dissipation at T_A=25°С

TO-220/TO-263

TO-262

P_D

TO-126/TO-126S

TO-220F

320

400

TO-251/TO-252

TO-252D

Derate above 25°С

mW/°С

°С

TO-220/TO-263

TO-262

600

Operating and Storage Junction Temperature

T_J, T_STG

-65 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-126/TO-126S

TO-251/TO-252

TO-252D

110

62.5

3.125

2.5

Junction to Ambient

Junction to Case

θ_JA

°С/W

TO-220/TO-263

TO-262/TO-220F

TO-126/TO-126S

TO-220F

TO-251/TO-252

TO-252D

θ_JC

°С/W

TO-220/TO-263

TO-262

1.67

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NPN SILICON TRANSISTOR

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ELECTRICAL CHARACTERISTICS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS (Note 1)

Collector-Emitter Sustaining Voltage

V_CEO(SUS)I_C=10mA , I_B=0

V_CBO=Rated Value,

400

_BE(OFF)=1.5V

V_CBO=Rated Value,

_BE(OFF)=1.5V, T_C=100°С

Collector Cutoff Current

I_CBO

Emitter Cutoff Current

I_EBO

V_EB=9V, I_C=0

SECOND BREAKDOWN

Second Breakdown Collector Current

with bass forward biased

I_S/B

See Fig. 11

See Fig. 12

Clamped Inductive SOA with Base

Reverse Biased

RBSOA

ON CHARACTERISTICS (Note 1)

h_FE1

h_FE2

h_FE3

I_C=0.5A, V_CE=5V

I_C=1A, V_CE=5V

I_C=2A, V_CE=5V

I_C=1A, I_B=0.2A

0.5

0.6

DC Current Gain

I_C=2A, I_B=0.5A

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

I_C=4A, I_B=1A

I_C=2A, I_B=0.5A, Ta=100°С

I_C=1A, I_B=0.2A

1.2

1.6

1.5

V_{BE (SAT)}I_C=2A, I_B=0.5A

I_C=2A, I_B=0.5A, T_C=100°С

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

Output Capacitance

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

f_T

I_C=500mA, V_CE=10V, f=1MHz

V_CB=10V, I_E=0, f=0.1MHz

MHz

C_OB

t_D

t_R

t_S

t_F

0.025 0.1

μs

Rise Time

0.3

1.7

0.4

0.7

V_CC=125V, I_C=2A, I_B1=I_B2=0.4A,

t_P=25μs, Duty Cycle≤1%

Storage Time

Fall Time

0.9

Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%

Note: 2. Pulse Test: P_W=300μs, Duty Cycle≤2%



CLASSIFICATION OF h_FE1

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

30 ~ 40

40 ~ 50

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APPLICATION INFORMATION

Table 1.Test Conditions for Dynamic Performance

Resistive

Switching

Reverse Bias Safe Operating Area and Inductive Switching

+5V

Vcc

1N4933

MJE210

MR826*

0.001μF

33 1N4933

+125V

Vclamp

2N2222

DUTY CYCLE≦10%

tr, tf≦10ns

TUT

SCOPE

*SELECTED FOR≧1kV

+5V

5.1k

VCE

T.U.T.

1N4933

270

-4.0V

2N2905

MJE200

0.02μF

Note:

100

PW and Vcc Adjusted for Desired Ic

RB Adjusted for Desired IB1

1/2W

-VBE(off)

_CC=125V

Coil Data :

V_CC=20V

FERROXCUBE core #6656

Full Bobbin ( ~ 16 Turns) #16

GAP for 200μH/20 A

L_COIL=200μH

R_C=62Ω

D1=1n5820 or

Equiv.

V_CLAMP=300V

RB=22Ω

OUTPUT WAVEFORMS

t_FCLAMPED

I_C

t_FUNCLAMPED t2

t¹Adjusted to

I_C(PK)

Obtain Ic

t^f

L_COIL(I_CPK

)

Test Equipment

Scope-Tektronics

475 or Equivalent

t¹=

V_CC

V_CE

V^CEor

V_CLAMP

L_COIL(I_CPK

V_CLAMP

)

t2=

TIME

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RESISTIVE SWITCHING PERFORMANCE

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NPN SILICON TRANSISTOR

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RESISTIVE SWITCHING PERFORMANCE(Cont.)

Fig. 6 Forward Bias Power Derating

SECOND BREAKDOWN

DERATING

0.8

0.6

0.4

0.2

THERMAL

DERATING

100

140

160

120

Case Temperature, TC (°С)

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SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I_C-V_CElimits of the transistor that must be observed for reliable

operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Fig. 4 is based on T_C= 25°С; T_J(PK)is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when T_C≥25°С. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case

temperature by using the appropriate curve on Fig. 6.

T_J(PK)may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,

with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe

Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified

under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete

RBSOA characteristics.

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MJE13005

NPN SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

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MJE13005

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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