MJE13007-TA3-T [UTC]

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS; NPN双极型功率晶体管开关电源的应用


型号：	MJE13007-TA3-T
厂家：	Unisonic Technologies
描述：	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS NPN双极型功率晶体管开关电源的应用晶体开关晶体管功率双极晶体管局域网
文件：	总6页 (文件大小：170K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13007

NPN SILICON TRANSISTOR

NPN BIPOLAR POWER

TRANSISTOR FOR SWITCHING

POWER SUPPLY

APPLICATIONS

TO-220

ꢀ

DESCRIPTION

The UTC MJE13007 is designed for high–voltage, high–speed

power switching inductive circuits where fall time is critical. It is

particularly suited for 115 and 220 V switch mode applications.

TO-220F

ꢀ

FEATURES

* V_CEO(SUS)400 V

*Pb-free plating product number: MJE13007L

* 700 V Blocking Capability

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

MJE13007-TA3-T

MJE13007-TF3-T

MJE13007L-TA3-T

MJE13007L-TF3-T

TO-220

Tube

TO-220F

MJE13007L-TA3-T

(1)Packing Type

(1)T: Tube

(2)Package Type

(3)Lead Plating

(2) TA3: TO-220, TF3: TO-220F

(3) L: Lead Free Plating, Blank: Pb/Sn

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MJE13007

NPN SILICON TRANSISTOR

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ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

RATINGS

400

700

9.0

UNIT

Collector-Emitter Sustaining Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Voltage

Continuous

Peak (1)

8.0

Collector Current

Base Current

I_CM

Continuous

Peak (1)

I_B

4.0

I_BM

8.0

Continuous

I_E

Emitter Current

Peak (1)

I_EM

P_D

Total Device Dissipation

T_C= 25℃

℃

Operating and Storage Junction Temperature Range

T_J,T_STG

-65 ~ +125

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

THERMAL DATA

PARAMETER

SYMBOL

θ_JC

RATINGS

1.56

UNIT

℃/W

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

θ_JA

62.5

Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.

Measurement made with thermocouple contacting the bottom insulated mounting surface of the package

(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a

mounting torque of 6 to 8•lbs.

ꢀ

ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

V_CEO(SUS)I_C=10mA, I_B=0

400

V_CBO=700V

I_CBO

0.1

1.0

100

µA

V_CBO=700V, T_C=125℃

I_EBO

h_FE1

h_FE2

V_EB=9.0V, I_C=0

I_C=2.0A, V_CE=5.0V

8.0

5.0

DC Current Gain

I_C=5.0A, V_CE=5.0V

I_C=2.0A, I_B=0.4A

1.0

2.0

3.0

1.2

1.6

1.5

I_C=5.0A, I_B=1.0A

Collector-Emitter Saturation Voltage

V_CE(SAT)

I_C=8.0A, I_B=2.0A

I_C=5.0A, I_B=1.0A, T_C=100℃

I_C=2.0A, I_B=0.4A

Base-Emitter Saturation Voltage

V_BE(SAT)

I_C=5.0A, I_B=1.0A

I_C=5.0A, I_B=1.0A, T_C=100℃

I_C=500mA, V_CE=10V, f=1.0 MHz

V_CB=10V, I_E=0, f=0.1MHz

Current-Gain-Bandwidth Product

Output Capacitance

Resistive Load (Table 1)

Delay Time

f_T

4.0

MHz

C_ob

t_D

t_R

t_S

t_F

0.025 0.1

_CC=125V, I_C=5.0A,

Rise Time

0.5

1.8

1.5

3.0

0.7

I_B1=I_B2=1.0A, t_p=25µs,

Duty Cycle≦1.0%

µs

Storage Time

Fall Time

0.23

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

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MJE13007

NPN SILICON TRANSISTOR

ꢀ

TYPICAL THERMAL RESPONSE

Figure1. Typical Thermal Response

0.7

0.5

D=0.5

D=0.2

0.2

0.1

0.07

0.05

R_θJC(t)=r(t)R_θJC

D=0.1

P(pk)

R_θJC=1.56℃/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t₁

TJ_(pk)-T_C=P_{(pk )}R_θJC(t)

D=0.05

D=0.02

0.02

0.01

D=0.01

DUTY CYCLE, D=t1/t2

SINGLE PULSE

0.05 0.1 0.2

0.01 0.02

0.5

100 200

500 10k

Time, t (msec)

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I_C-V_CElimits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on T_C= 25℃; T_J(pk)is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be debated when T_C≥25℃. Second breakdown limitations do not

debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any

case temperature by using the appropriate curve on Figure 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section.

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MJE13007

NPN SILICON TRANSISTOR

Table 1. Test Conditions for Dynamic Performance

RESISTIVE

SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

V_CC

+125

+15V

MTP8P10

100Ω

100µF

150Ω

1µF

MUR8100E

R_C

R_B1

Vclamp=300V

MPF930

I_C

MUR105

MJE210

I_B

+10V

R_B

TUT

SCOPE

R_B2

I_B

TUT

5.1k

500Ω

500µF

150Ω

COMMON

Voff

V_CE

MTP12N10

1µF

-4V

Inductive

BV_{CEO (SUS)}

RBSOA

Switching

L=20mH

R_B2=0

L=10mH

R_B2=8

L=500mH

R_B2=0

V_CC=125V

R_C=25Ω

D1=1N5820 OR EQUIV

_CC=15Volts

_CC=20V

V_CC=15V

_C(pk)=100mA R_B1selected R_B1selected

for desired I_B1

TYPICAL

WAVEFORMS

t_fCLAMPED

t_fUNCLAMPED≒t2

I_C

25µs

t1 ADJUSTED TO

OBTAIN I_C

+11V

I_CM

Lcoil(I_CM

V_CC

)

V_CEPEAK

t1 ≤

Lcoil(I_CM)

Vclamp

V_CE

t2 ≤

t_f

V_CE

TEST EQUIPMENT

SCOPE-TEKTRONIX

475 OR EQUIVALENT

I_B1

I_B

t_r, t_f<10ns

V_CEM

Vclamp

DUTY CYCLE=1.0%

RB AND RC ADJUSTED

FOR DESIRED IB AND I_C

I_B2

TIME

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MJE13007

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Figure 2. Base-Emitter Saturation Voltage

I_C/I_B=5

Figure 3. Collector-Emitter Saturation Voltage

1.4

1.2

I_C/I_B=5

0.8

0.6

0.4

0.5

I_C=-40℃

0.2

I_C=-40℃

25℃

0.1

25℃

100℃

0.05

100℃

0.02

0.01

0.1 0.2 0.5 1

0.01 0.02 0.05

0.01 0.02 0.05 0.1 0.2 0.5 1

5 10

CollectorCurrent, I_C(A)

Figure 4. Collector Saturation Region

Figure 5. DC Current Gain

100

T_J=25℃

V_CE=5

2.5

T_J=100℃

25℃

40℃

1.5

I_C=8A

I_C=5A

I_C=3A

I_C=1A

0.5

0.01

0.01 0.02 0.050.1 0.2 0.5 1 2 3 5 10

0.1

Base Current, I_B(A)

CollectorCurrent, I_C(A)

Figure 7. Maximum Forward Bias Safe

Operating Area

Figure 6. Capacitance

100

10000

T_J=25℃

Extended

SOA@1μs,10μs

1μs

1000

100

μs

1ms

0.5

0.2

0.1

T_C=25℃

5ms

C_ob

Bonding wire limit

Thermal limit

0.05

Second breakdown limit

curves apply below

rated V^CEO

0.02

0.01

0.1

100

1000

10 20 30 5070100 200300 500 1000

Collector-Emitter Voltage, V_CE(V)

Reverse Voltage,V_R(V)

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MJE13007

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Figure 8. Maximum Reverse Bias

Switching Safe Operating Area

Figure 9. Forward Bias Power Derating

SECOND

BREAKDOWN

DERATING

0.8

0.6

0.4

0.2

T_C≦100℃

_AIN≧4

THERMAL

DERATING

L_C=500μH

V_BE(OFF)

-5V

-2V

0 100 200 300 400 500 600 700 800

20 40

60 80 100 120 140 160

Collector-Emitter Clamp Voltage, V_CEV(V)

Case Temperature, T_C(℃)

Figure 11. Turn-Off Time(Resistive Load)

V_CC=125V

Figure 10. Turn-On Time(Resistive Load)

10000

7000

5000

V_CC=125V

I_C/I_B=5

t_S

I_B(ON)=I_B(OFF)

_B(on)=I_B(off)

1000 T_J=25℃

PW=125µs

T_J=25℃

t_R

2000

PW=25μs

1000

700

500

100

t_F

t_D

200

100

5 6 7 8 9 10

5 6 7 9 10

CollectorCurrent, I_C(A)

Collector Current, I_C(A)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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