MJE13007C(TO-220F) [UTC]

Transistor;


型号：	MJE13007C(TO-220F)
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总5页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UTC MJE13007

NPN EPITAXIAL SILICON TRANSISTOR

NPN BIPOLAR POWER TRANSISTOR

FOR SWITCHING POWER SUPPLY

APPLICATIONS

DESCRIPTION

The UTC MJE13007 is designed for high–voltage,

high–speed power switching inductive circuits where fall

time is critical. It is particularly suited for 115 and 220 V

switchmode applications.

FEATURES

* VCEO(sus) 400 V

* 700 V Blocking Capability

TO-220F

APPLICATIONS

*Switching Regulators

*Inverters

*Motor Controls

*Solenoid/Relay drivers

*Deflection circuits

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number:MJE13007L

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VCEO

VCES

VEBO

RATINGS

UNIT

Collector-Emitter Sustaining Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Voltage

400

700

9.0

8.0

4.0

8.0

Collector Current – Continuous

– Peak (1)

ICM

Base Current – Continuous

– Peak (1)

IBM

IEM

P^D

TJ, Tstg

Emitter Current – Continuous

– Peak (1)

Total Device Dissipation @ TC = 25℃

℃

Operating and Storage Temperature

-65 ~ +150

THERMAL CHARACTERISTICS RATINGS

PARAMETER

Thermal Resistance

SYMBOL

RATINGS

UNIT

RθJC

RθJA

℃/W

Junction to Case

1.56

62.5

Junction to Ambient

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a

location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6

to 8•lbs.

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

UTC MJE13007

NPN EPITAXIAL SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise noted)

PARAMETER

Collector-Emitter Sustaining Voltage

Collector Cutoff Current

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

VCEO(sus) Ic=10mA, IB=0

400

VCES=700V

0.1

1.0

100

ICES

VCES=700V, TC=125℃

μA

Emitter Cutoff Current

DC Current Gain

IEBO

hFE1

hFE2

VEB=9.0V, IC=0

IC=2.0A, VCE=5.0V

IC=5.0A, VCE=5.0V

8.0

5.0

Collector-Emitter Saturation Voltage

I^C=2.0A, IB=0.4A

1.0

2.0

3.0

1.2

1.6

1.5

IC=5.0A, IB=1.0A

V^CE(sat)

I^C=8.0A, IB=2.0A

IC=5.0A, IB=1.0A, TC=100℃

Base-Emitter Saturation Voltage

I^C=2.0A, IB=0.4A

V^BE(sat)

I^C=5.0A, IB=1.0A

IC=5.0A, IB=1.0A, TC=100℃

Current-Gain-Bandwidth Product

Output Capacitance

Resistive Load (Table 1)

Delay Time

Rise Time

Storage Time

Cob

IC=500mA, VCE=10V, f=1.0 MHz

VCB=10V, IE=0, f=0.1MHz

4.0

MHz

V^CC=125V, IC=5.0A,

0.025 0.1

0.5

1.8

IB1=IB2=1.0A, tp=25μs,

1.5

3.0

0.7

μs

Duty Cycle≦1.0%

Fall Time

0.23

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

CLASSIFICATION OF HFE1

RANK

RANGE

8 ~ 16

15 ~ 21

20 ~ 26

25 ~ 31

30 ~ 36

35 ~ 40

TYPICAL THERMAL RESPONSE

Figure1. Typical Thermal Response

0.7

0.5

D=0.5

D=0.2

0.2

D=0.1

0.1

D=0.05

0.07

P(pk)

R^θJC(t)=r(t)RθJC

RθJC=1.56℃/W MAX

0.05

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

D=0.02

TJ(pk)-Tc=P(pk)RθJC (t)

0.02

D=0.01

DUTY CYCLE, D=t1/t2

SINGLE PULSE

0.01

0.02

0.1

0.2

0.5

0.01

0.05

100

200

500

10k

TIME, t (msec)

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be debated when TC≥25℃. Second breakdown limitations do not

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

UTC MJE13007

NPN EPITAXIAL SILICON TRANSISTOR

debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any

case temperature by using the appropriate curve on Figure 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section.

TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE

RESISTIVE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

SWITCHING

Vcc

+15V

100Ω

MTP8P10

150Ω

100μF

1μF

+125

MUR8100E

RB1

MUR105

MJE210

MPF930

Vclamp=300V

MPF930

+10V

TUT

SCOPE

RB2

TUT

5.1k

500Ω

150Ω

COMMON

VCE

MTP12N10

500μF

-4V

Voff

1μF

Inductive

Switching

V(BR)CEO (SUS)

RBSOA

Vcc=125V

L=20mH

L=500mH

R^B2=0

L=10mH

Rc=25Ω

R^B2=0

R^B2=8

D1=1N5820 OR EQUIV

Vcc=15V

RB1 selected

Vcc=15Volts

R^B1selected

Vcc=20V

Ic(pk)=100mA

for desired I B1 for desired I ^B1

TYPICAL

WAVEFORMS

tf CLAMPED

t1 ADJUSTED TO

OBTAIN Ic

tf UNCLAMPED≒t2

VCE PEAK

25μs

+11V

ICM

Lcoil(ICM)

VCE

t1 ≒

Vcc

Lcoil(ICM)

t2 ≒

Vclamp

IB1

VCE

TEST EQUIPMENT

SCOPE-TEKTRONIX

475 OR EQUIVALENT

tr, tf<10ns

DUTY CYCLE=1.0%

RB AND RC ADJUSTED

FOR DESIRED IB AND IC

VCEM

TIME

Vclamp

IB2

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

UTC MJE13007

TYPICAL CHARACTERISTICS

NPN EPITAXIAL SILICON TRANSISTOR

Figure 2. Base-Emitter Saturation Voltage

IC/IB=5

Figure 3. Collector-Emitter Saturation Voltage

IC/IB=5

1.4

1.2

0.8

0.6

0.4

0.5

IC=-40℃

0.2

IC=-40℃

25℃

0.1

100℃

0.05

100℃

0.02

0.01

0.1 0.2

0.5

0.01 0.02 0.05

0.01 0.02 0.05 0.1 0.2

0.5

COLLECTOR CURRENT, Ic (AMPS)

Figure 4. Collector Saturation Region

Figure 5. DC Current Gain

100

TJ=25℃

VCE=5

2.5

TJ=100℃

25℃

40℃

1.5

Ic=8A

Ic=5A

Ic=3A

0.5

Ic=1A

0.5

0.02

0.1 0.2

0.1

0.01

0.05

0.01

BASE CURRENT, IB (AMPS)

COLLECTOR CURRENT, Ic (AMPS)

Figure 6. Capacitance

Figure 7. Maximum Forward Bias Safe Operating Area

100

10000

1000

100

TJ=25℃

Extended SOA@1μs,10μs

Cib

1μs

10μs

Tc=25℃

1ms

5ms

Cob

0.5

0.2

0.1

0.05

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW

RATED VCEO

0.02

0.01

100

REVERSE VOLTAGE,VR

(VOLTS)

COLLECTOR-EMITTER VOLTAGE, VCE (VOLTS)

0.1

1000

50 70 100

200 300 500

1000

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

UTC MJE13007

NPN EPITAXIAL SILICON TRANSISTOR

Figure 8. Maximum Reverse Bias Switching Safe

Operating Area

Figure 9. Forward Bias Power Derating

0.8

0.6

SECOND BREAKDOWN

DERATING

Tc≦100℃

GAIN≧4

Lc=500μH

THERMAL

DERATING

0.4

0.2

VBE(off)

-5V

-2V

700

100

120

140

100

300 400 500 600

800

160

200

COLLECTOR-EMITTER CLAMP VOLTAGE,

VCEV (VOLTS)

CASE TEMPERATURE, TC (℃)

Figure 10. Turn-On Time(Resistive Load)

Figure 11. Turn-Off Time(Resistive Load)

Vcc=125V

10000

7000

5000

Vcc=125V

Ic/IB=5

IB(on)=IB(off)

Tj=25℃

PW=125 µs

TJ=25℃

1000

100

PW=25μs

2000

1000

700

500

200

100

9 10

7 9 10

COLLECTOR CURRENT, IC (AMP)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R219-004,A

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