MJE13007L-TF2-T [UTC]
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING;
| 型号： | MJE13007L-TF2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING 开关 |
| 文件： | 总6页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13007
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
DESCRIPTION
The UTC MJE13007 is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. It is
particularly suited for 115 and 220 V switch mode applications.
FEATURES
* VCEO(SUS) 400V
* 700V Blocking Capability
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
B
2
3
E
E
E
E
MJE13007L-TA3-T
MJE13007L-TF3-T
MJE13007L-TF1-T
MJE13007L-TF2-T
MJE13007G-TA3-T
MJE13007G-TF3-T
MJE13007G-TF1-T
MJE13007G-TF2-T
TO-220
TO-220F
TO-220F1
TO-220F2
C
C
C
C
Tube
Tube
Tube
Tube
Note: Pin Assignment: B: BASE, C: COLLECTOR, E: EMITTER
MJE13007L-TA3-T
(1)T: Tube
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1
TF2: TO-220F2
(1)Packing Type
(2)Package Type
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
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MJE13007
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCEO
VCBO
VEBO
IC
RATINGS
400
700
9.0
UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
V
V
Continuous
8.0
A
Collector Current
Base Current
Peak (1)
ICM
16
A
Continuous
Peak (1)
IB
4.0
A
IBM
8.0
A
Continuous
Peak (1)
IE
12
A
Emitter Current
IEM
24
A
TO-220
80
Power Dissipation
(TC = 25°C)
TO-220F/TO-220F1
TO-220F2
PD
36
W
38
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
θJA
Junction to Ambient
1.56
TO-220
Junction to Case
θJC
3.47
°C/W
TO-220F/TO-220F1
TO-220F2
3.28
Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(SUS) IC=10mA, IB=0
400
V
V
CES=700V
0.1
1.0
100
40
mA
mA
μA
ICBO
VCES=700V, TC=125°C
VEB=9.0V, IC=0
IEBO
hFE1
hFE2
IC=2.0A, VCE=5.0V
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
8.0
5.0
DC Current Gain
30
1.0
2.0
3.0
3.0
1.2
1.6
1.5
V
V
IC=5.0A, IB=1.0A
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=8.0A, IB=2.0A
V
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
V
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
V
V
Current-Gain-Bandwidth Product
Output Capacitance
RESISTIVE LOAD (TABLE 1)
Delay Time
fT
IC=500mA, VCE=10V, f=1.0 MHz
VCB=10V, IE=0, f=0.1MHz
4.0
14
80
MHz
pF
COB
tD
tR
tS
tF
0.025 0.1
μs
μs
μs
μs
VCC=125V, IC=5.0A,
Rise Time
0.5
1.8
1.5
3.0
0.7
IB1=IB2=1.0A, tP=25μs,
Duty Cycle≤1.0%
Storage Time
Fall Time
0.23
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig. 7 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do not
debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case
temperature by using the appropriate curve on Fig. 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section.
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MJE13007
NPN SILICON TRANSISTOR
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
VCC=125V
RC=25Ω
D1=1N5820 OR EQUIV
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
1.4
1.2
10
5
IC/IB=5
IC/IB=5
2
1
1
0.8
0.6
0.4
0.5
IC=-40°C
0.2
IC=-40°C
25°C
25°C
0.1
100°C
0.05
100°C
0.02
0.01
0.1 0.2 0.5
1
5
10
0.01 0.02 0.05
2
0.1 0.2 0.5
1
5
10
0.01 0.02 0.05
Collector Current, IC (A)
Fig. 3 Collector-Emitter Saturation Voltage
2
Collector Current, IC (A)
Fig. 2 Base-Emitter Saturation Voltage
100
50
10000
1000
100
TJ=25°C
Extended SOA@1μs,10μs
1μs
20
10
Cib
10μs
5
2
1
TC=25°C
DC
1ms
5ms
Cob
0.5
0.2
0.1
Bonding wire limit
Thermal limit
Second breakdown limit
curves apply below
rated vceo
0.05
0.02
0.01
10
100
30
5070 100 200
0.1
1
10
1000
500 1000
300
10
20
Collector-Emitter Voltage, VCE (V)
Reverse Voltage,VR (V)
Fig. 6 Capacitance
Fig. 7 Maximum Forward Bias Safe
Operating Area
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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