MJE13009-Q [UTC]

NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS;


型号：	MJE13009-Q
厂家：	Unisonic Technologies
描述：	NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS 开关
文件：	总4页 (文件大小：257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13009-Q

Preliminary

NPN SILICON TRANSISTOR

NPN BIPOLAR POWER

TRANSISTOR FOR

SWITCHING POWER SUPPLY

APPLICATIONS



DESCRIPTION

The UTC MJE13009-Q is designed for high-voltage,

high-speed power switching inductive circuits where fall time is

critical. It is particularly suited for 115 and 220 V switch mode

applications.



FEATURES

* V_CEO(SUS)400V

* 700V Blocking Capability

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Tube

Lead Free

Halogen Free

MJE13009G-Q-TA3-T

MJE13009L-Q-TA3-T

TO-220

B: Base

Note: Pin Assignment: E: Emitter

C: Collector

MJE13009L-Q-TA3-T

(1) T: Tube

(1)Packing Type

(2)Package Type

(2) TA3: TO-220

(3) L: Lead Free, G: Halogen Free and Lead Free

(3)Green Package



MARKING

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Preliminary

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

RATINGS

400

UNIT

Collector-Emitter Sustaining Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Voltage

700

9.0

Continuous

Peak (1)

8.0

Collector Current

Base Current

I_CM

Continuous

Peak (1)

I_B

4.0

I_BM

8.0

Continuous

Peak (1)

I_E

Emitter Current

I_EM

Power Dissipation (T_C= 25°C)

Junction Temperature

P_D

°C

T_J

+150

-55~+150

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

1.56

Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.

Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in

a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting

torque of 6 to 8•lbs.



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

V_CEO(SUS)I_C=10mA, I_B=0

400

V_CES=700V

I_CBO

0.1

1.0

100

μA

V_CES=700V, T_C=125°C

I_EBO

h_FE1

h_FE2

V_EB=9.0V, I_C=0

I_C=2.0A, V_CE=5.0V

I_C=5.0A, V_CE=5.0V

I_C=2.0A, I_B=0.4A

8.0

5.0

DC Current Gain

1.0

2.0

3.0

1.2

1.6

1.5

I_C=5.0A, I_B=1.0A

Collector-Emitter Saturation Voltage

V_CE(SAT)

I_C=8.0A, I_B=2.0A

I_C=5.0A, I_B=1.0A, T_C=100°C

I_C=2.0A, I_B=0.4A

Base-Emitter Saturation Voltage

V_BE(SAT)

I_C=5.0A, I_B=1.0A

I_C=5.0A, I_B=1.0A, T_C=100°C

I_C=500mA, V_CE=10V, f=1.0 MHz

V_CB=10V, I_E=0, f=0.1MHz

Current-Gain-Bandwidth Product

Output Capacitance

RESISTIVE LOAD (TABLE 1)

Delay Time

f_T

4.0

MHz

C_OB

t_D

t_R

t_S

t_F

0.025 0.1

μs

V_CC=125V, I_C=5.0A,

I_B1=I_B2=1.0A, t_P=25μs,

Duty Cycle≤1.0%

Rise Time

0.5

1.8

1.5

3.0

0.7

Storage Time

Fall Time

0.23

Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

UNISONIC TECHNOLOGIES CO., LTD

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MJE13009-Q

Preliminary

NPN SILICON TRANSISTOR



TYPICAL THERMAL RESPONSE

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I_C-V_CElimits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Fig. 7 is based on T_C= 25°C; T_J(PK)is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be debated when T_C≥25°C. Second breakdown limitations do not

debate the same as thermal limitations. Allowable current at the voltages shown on Fig. 7 may be found at any case

temperature by using the appropriate curve on Fig. 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Use of reverse biased safe operating area data (Fig. 8) is discussed in the applications information section.

UNISONIC TECHNOLOGIES CO., LTD

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MJE13009-Q

Preliminary

NPN SILICON TRANSISTOR



TEST CONDITIONS FOR DYNAMIC PERFORMANCE

Table 1. Test Conditions for Dynamic Performance

RESISTIVE

SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

Inductive

BV_{CEO (SUS)}

RBSOA

Switching

L=500mH

R_B2=0

V_CC=15Volts

R_B1selected

for desired I_B1

L=20mH

R_B2=0

V_CC=15V

L=10mH

R_B2=8

_CC=125V

R_C=25Ω

D1=1N5820 OR EQUIV

V_CC=20V

R_B1selected

I_C(PK)=100mA

for desired I_B1

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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