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MJE13009-TA3-T [UTC]

SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS; SWITCHMODE系列NPN开关模式系列NPN晶体管
MJE13009-TA3-T
型号： MJE13009-TA3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

SWITCHMODE SERIES NPN SWITCHMODE SERIES NPN TRANSISTORS
SWITCHMODE系列NPN开关模式系列NPN晶体管

晶体 开关 晶体管 功率双极晶体管 局域网
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UNISONIC TECHNOLOGIES CO., LTD  
MJE13009  
NPN SILICON TRANSISTOR  
SWITCHMODE SERIES NPN  
SILICON POWER  
TRANSISTORS  
1
TO-3P  
ꢀ
DESCRIPTION  
The MJE13009 is designed for high–voltage, high–speed power  
switching inductive circuits where fall time is critical. They are  
particularly suited for 115 and 220 V switch mode applications  
such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
1
TO-220  
ꢀ
FEATURES  
1
TO-220F  
* VCEO 400 V and 300 V  
* Reverse Bias SOA with Inductive Loads @ TC = 100℃  
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃  
tc @ 8 A, 100℃ is 120 ns (Typ).  
*Pb-free plating product number:MJE13009L  
* 700 V Blocking Capability  
* SOA and Switching Applications Information.  
ꢀ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
MJE13009L-TA3-T  
MJE13009L-TF3-T  
MJE13009L-T3P-T  
1
B
B
B
2
C
C
C
3
E
E
E
MJE13009-TA3-T  
MJE13009-TF3-T  
MJE13009-T3P-T  
TO-220  
TO-220F  
TO-3P  
Tube  
Tube  
Tube  
MJE13009L-TA3-T  
(1) T: Tube  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(2) TA3: TO-220, TF3: TO-220F, T3P: TO-3P  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
1 of 8  
Copyright © 2005 Unisonic Technologies Co., Ltd  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)  
PARAMETER  
SYMBOL  
VCEO  
VCBO  
IEBO  
IC  
RATINGS  
UNIT  
Collector-Emitter Voltage  
400  
700  
9
V
V
V
Collector-Base Voltage  
Emitter Base Voltage  
Continuous  
12  
24  
6
Collector Current  
Peak*  
A
A
A
ICM  
Continuous  
IB  
Base Current  
Peak*  
IBM  
12  
18  
36  
Continuous  
IE  
Emitter Current  
Peak*  
IEM  
Total Power Dissipation @ Ta = 25℃  
Derate above 25℃  
2
16  
W
mW/℃  
W
PD  
PD  
Total Power Dissipation @ TC = 25℃  
Derate above 25℃  
100  
800  
mW/℃  
℃
Junction Temperature  
TJ  
+150  
-40 ~ +150  
℃
Storage Temperature  
TSTG  
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%  
2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
ꢀ
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
℃/W  
℃/W  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
θJA  
54  
4
θJC  
ꢀ ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)  
PARAMETER  
*OFF CHARACTERISTICS  
Collector- Emitter Sustaining Voltage  
Collector Cutoff Current  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
VCEO  
ICBO  
IEBO  
IC = 10mA, IB = 0  
400  
V
V
BE(OFF) = 1.5Vdc  
BE(OFF) = 1.5Vdc, TC = 100℃  
1
5
1
mA  
mA  
VCBO=Rated Value  
V
Emitter Cutoff Current  
VEB = 9Vdc, IC = 0  
*ON CHARACTERISTICS  
hFE1  
IC = 5A,VCE = 5V  
IC = 8A,VCE = 5V  
40  
30  
DC Current Gain  
hFE 2  
IC = 5A, IB = 1A  
1
1.5  
3
V
V
V
V
V
V
IC = 8A, IB = 1.6A  
Current-Emitter Saturation Voltage  
VCE(SAT)  
IC = 12A, IB = 3A  
IC = 8A, IB = 1.6A, TC = 100℃  
IC = 5A, IB = 1A  
2
1.2  
1.6  
IC = 8A, IB = 1.6A  
Base-Emitter Saturation Voltage  
VBE(SAT)  
IC = 8A, IB = 1.6A, TC = 100℃  
1.5  
V
DYNAMIC CHARACTERISTICS  
Transition frequency  
fT  
IC = 500mA, VCE = 10V, f = 1MHz  
VCB = 10V, IE = 0, f = 0.1MHz  
4
MHz  
pF  
Output Capacitance  
Cob  
180  
0.06 0.1  
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
tDLY  
tR  
µs  
µs  
µs  
µs  
VCC = 125Vdc, IC = 8A  
B1 = IB2 = 1.6A, tP = 25µs  
0.45  
1.3  
1
3
I
tS  
Duty Cycle ≤1%  
tF  
0.2  
0.7  
Inductive Load, Clamped (Table 1, Figure 13)  
Voltage Storage Time  
Crossover Time  
tS  
tC  
IC=8A, Vclamp=300V, IB1=1.6A  
0.92 2.3  
0.12 0.7  
µs  
µs  
VBE(OFF) = 5V, TC = 100℃  
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE  
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING  
RESISTIVE SWITCHING  
+125V  
+5V  
VCC  
33  
1N4933  
MJE210  
L
MR826*  
0.001μF  
1N4933  
33  
RC  
5V  
Vclamp  
IC  
TUT  
PW  
2N2222  
RB  
1k  
SCOPE  
RB  
DUTY CYCLE≤10%  
tR, tF ≤10 ns  
68  
*SELECTED FOR . 1 kV  
1k  
+5V  
5.1k  
51  
IB  
VCE  
D1  
1k  
D.U.T.  
1N4933  
270  
2N2905  
MJE200  
0.02μF  
-4.0V  
47  
100  
NOTE  
1/2W  
PW and VCC Adjusted for Desired IC  
RB Adjusted for Desired IB1  
–VBE(off)  
VCC = 125 V  
C = 15 Ω  
D1 = 1N5820 or Equiv.  
B = Ω  
Coil Data:  
Ferroxcube Core #6656  
Full Bobbin (~16 Turns) #16  
R
GAP for 200 µH/20 A  
Lcoil = 200 µH  
VCC = 20 V  
Vclamp = 300 Vdc  
R
+10V  
0
25 µs  
OUTPUT WAVEFORMS  
tF CLAMPED  
IC  
tF UNCLAMPED 9 t2  
t1 ADJUSTED TO  
OBTAIN IC  
ICM  
Test Equipment  
Scope–Tektronics  
475 or Equivalent  
t
Lcoil (ICM  
VCC  
)
t1≈  
t2≈  
t1  
tF  
-8V  
VCE  
Lcoil (ICM  
)
VCEM  
Vclamp  
tR, tF < 10 ns  
Vclamp  
Duty Cycle = 1.0%  
RB and RC adjusted  
t2  
TIME  
for desired IB and IC  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS  
CIRCUIT  
LOAD LINE DIAGRAMS  
TIME DIAGRAMS  
IC  
TURN–ON (FORWARD BIAS) SOA  
24A  
tON ≤10 ms  
SERIES SWITCHING  
REGULATOR  
DUTY CYCLE≤10%  
PD = 4000 W  
2
TC = 100°C  
t
350V  
TIME  
TURN–OFF (REVERSE BIAS) SOA  
1.5 V ≤VBE(off) ≤9.0 V  
12A  
VCE  
TURN–ON  
DUTY CYCLE≤10%  
VCC  
VCC  
VOUT  
TURN–OFF  
+
1
1
VCC 400V  
700V  
t
COLLECTOR VOLTAGE  
TIME  
RINGING CHOKE  
INVERTER  
TURN–ON (FORWARD BIAS) SOA  
ON ≤10 ms  
DUTY CYCLE≤10%  
IC  
24A  
t
PD = 4000 W  
2
tOFF  
TC = 100°C  
VCC  
VOUT  
tON  
350V  
t
N
TURN–OFF (REVERSE BIAS) SOA  
12A  
LEAKAGE SPIKE  
VCE  
1.5 V ≤VBE(off) ≤9.0 V  
DUTY CYCLE≤10%  
TURN–OFF  
TURN–ON  
+
VCC  
N(VO)  
VCC  
+
VCC  
1
1
700V  
400V  
t
VCC+N(VOUT )  
COLLECTOR VOLTAGE  
PUSH–PULL  
INVERTER/CONVERTER  
TURN–ON (FORWARD BIAS) SOA  
tON ≤10 ms  
IC  
24A  
DUTY CYCLE≤10%  
tOFF  
tON  
PD = 4000 W 2  
350V  
TC = 100°C  
t
VOUT  
VCE  
TURN–OFF (REVERSE BIAS) SOA  
12A  
1.5 V ≤VBE(off) ≤9.0 V  
TURN–ON  
VCC  
2 VCC  
VCC  
DUTY CYCLE≤10%  
TURN–OFF  
2 VCC  
+
VCC  
1
700V  
COLLECTOR VOLTAGE  
1
400V  
t
IC  
TURN–ON (FORWARD BIAS) SOA  
tON ≤10 ms  
SOLENOID DRIVER  
24A  
DUTY CYCLE≤10%  
VCC  
tOFF  
tON  
PD = 4000 W 2  
350V  
TC = 100°C  
t
SOLENOID  
12A  
TURN–OFF (REVERSE BIAS) SOA  
1.5 V ≤VBE(off) ≤9.0 V  
VCE  
DUTY CYCLE≤10%  
TURN–OFF  
TURN–ON  
VCC  
VCC  
2 VCC  
+
1
1
400V  
700V  
COLLECTOR VOLTAGE  
t
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE  
IC(A)  
3
TC(℃)  
25  
100  
25  
100  
25  
100  
25  
tsv(ns)  
770  
1000  
630  
trv(ns)  
100  
230  
72  
100  
55  
tfi(ns)  
150  
160  
26  
tti(ns)  
200  
200  
10  
30  
2
tc(ns)  
240  
320  
100  
180  
77  
120  
41  
54  
5
8
820  
55  
720  
920  
27  
50  
70  
8
640  
800  
20  
32  
17  
24  
2
4
12  
100  
ꢀ
SWITCHING TIME NOTES  
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and  
voltage  
waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power  
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements  
must be made on each waveform to determine the total switching time. For this reason, the following new terms  
have been defined.  
t
sv = Voltage Storage Time, 90% IB1 to 10% VCEM  
trv = Voltage Rise Time, 10–90% VCEM  
tfi = Current Fall Time, 90–10% ICM  
tti = Current Tail, 10–2% ICM  
tc = Crossover Time, 10% VCEM to 10% ICM  
An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms.  
For the designer, there is minimal switching loss during storage time and the predominant switching power losses  
occur during the crossover interval and can be obtained using the standard equation from AN–222:  
PSWT = 1/2 VCCIC(tc) f  
Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi ≈ tc. However, at lower test  
currents this relationship may not be valid.  
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a  
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented  
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are  
guaranteed at 100℃.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARATERISTICS  
Figure 2. Reverse Bias Switching Safe Operating Area  
Figure 1. Forward Bias Safe Operating Area  
100  
50  
14  
12  
10  
10μs  
20  
10  
5
100μs  
1ms  
TC ≤100℃  
IB1 = 2.5 A  
2
TC = 25℃  
8
6
4
dc  
1
0.5  
VBE(OFF) = 9V  
5V  
THERMAL LIMIT  
BONDING WIRE LIMIT  
SECOND BREAKDOWN LIMIT  
0.2  
0.1  
0.05  
2
0
CURVES APPLY BELOW RATED VCEO  
3V  
0.02  
0.01  
1.5V  
5
7
10  
20 30 50 70 100  
200 300 500  
0
100 200  
300 400 500 600 700 800  
Collector–Emitter Voltage, VCE (V)  
Collector–Emitter Clamp Voltage, VCBO (V)  
Figure 3. Forward Bias Power Derating  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second breakdown.  
Safe operating area curves indicate IC–VCE limits of the transistor  
that must be observed for reliable operation; i.e., the transistor  
must not be subjected to greater dissipation than the curves  
indicate.  
1
Second Breakdown  
Derating  
0.8  
The data of Figure1 is based on TC = 25℃; TJ(pk) is variable  
depending on power level. Second breakdown pulse limits are  
0.6  
0.4  
valid for duty cycles to 10% but must be derated when T ≥25℃.  
C
Thermal  
Derating  
Second breakdown limitations do not derate the same as thermal  
limitations. Allowable current at the voltages shown on Figure 1  
may be found at any case temperature by using the appropriate  
curve on Figure 3.  
TJ(pk) may be calculated from the data in Figure 4. At high  
case temperatures, thermal limitations will reduce the power  
that can be handled to values less than the limitations imposed  
by second breakdown. Use of reverse biased safe operating  
area data (Figure 2) is discussed in the applications information  
section.  
0.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, TC (°C)  
Figure 4. Typical Thermal Response [ZθJC(t)]  
1
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P(pk)  
0.1  
Z
θJC (t) = r(t) θJC  
0.05  
0.02  
θJC = 1.25°C/W MAX  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.07  
0.05  
t1  
0.03  
0.02  
READ TIME AT t  
1
t2  
TJ(pk) –TC = P(pk) ZθJC(t)  
0.01  
Duty Cycle, D = t1/t2  
Single Pulse  
0.05 0.1  
0.01  
0.01 0.02  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500 1.0k  
Time, t (ms)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS (Cont.)  
Figure 6. Collector Saturation Region  
Figure 5. DC Current Gain  
50  
30  
20  
2
VCE = 5V  
IC = 12A  
1.6  
TJ = 150℃  
IC= 3A  
IC = 5A IC = 8A  
IC = 1A  
TJ = 25℃  
1.2  
0.8  
10  
7
0.4  
0
TJ = 25℃  
5
0.2 0.3 0.5 0.7  
1
2
3
5
7
10  
20  
0.050.07 0.1  
0.2 0.3  
0.5 0.7  
1
2
3
5
Collector Current, IC (A)  
Base Current, IB (A)  
Figure 7. Base–Emitter Saturation Voltage  
Figure 8. Collector–Emitter Saturation Voltage  
1.4  
1.2  
1
0.7  
0.6  
0.5  
IC/IB = 3  
IC/IB = 3  
TJ = 150℃  
0.4  
0.3  
0.2  
0.8  
0.6  
0.4  
TJ = 25℃  
TJ = 150℃  
TJ = 25℃  
0.1  
0
0.2 0.3  
0.5 0.7  
1
2
3
5
7
10  
20  
0.2 0.3 0.5 0.7  
1
2
3
5
7
10  
20  
Collector Current, IC (A)  
Collector Currnet, IC (A)  
Figure 9. Collector Cutoff Region  
Figure 10. Capacitance  
10k  
4k  
TJ = 25℃  
VCE = 250V  
Cib  
2k  
1k  
TJ = 150℃  
1k  
800  
600  
125℃  
100℃  
100  
400  
10  
1
75℃  
50℃  
Cob  
200  
100  
80  
25℃  
60  
40  
REVERSE  
-0.2  
Base–Emitter Voltage, VBE (V)  
FORWARD  
0.1  
-0.4  
0
+0.2 +0.4  
+0.6  
0.1 0.2 0.5 1  
2
5
10 20 50 100 200  
500  
Reverse Voltage, VR (V)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
www.unisonic.com.tw  
QW-R203-024,D  
MJE13009  
■ RESISTIVE SWITCHING PERFORMANCE  
NPN SILICON TRANSISTOR  
Figure 11. Turn–On Time  
Figure 12. Turn–Off Time  
1k  
2k  
VCC = 125V  
tS  
IC/IB = 5  
TJ = 25℃  
700  
500  
1k  
700  
VCC = 125V  
IC/IB = 5  
TJ = 25℃  
300  
200  
500  
tR  
300  
200  
100  
70  
tF  
tDLY @ VBE(OFF) = 5V  
50  
100  
0.2 0.3 0.5 0.7  
1
2
3
5
7
10  
20  
0.2 0.3 0.5 0.7  
1
2
5
7
10  
20  
Collector Current, IC (A)  
Collector Crrent, IC (A)  
Figure 13. Typical Inductive Switching Waveforms  
(at 300V and 12A with IB1 = 2.4A and VBE(off) = 5V)  
IC  
VCE  
IC  
VCE  
TIME 20 ns/DIV  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
www.unisonic.com.tw  
QW-R203-024,D  

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