MJE13009D [UTC]

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管


型号：	MJE13009D
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压快速开关NPN功率晶体管晶体开关晶体管高压
文件：	总5页 (文件大小：184K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE13009D

NPN SILICON TRANSISTOR

HIGH VOLTAGE

FAST-SWITCHING NPN POWER

TRANSISTOR

DESCRIPTION

The UTC MJE13009D is a high voltage fast-switching NPN

power transistor. It is characterized by high breakdown voltage,

high current capability, high switching speed and high reliability.

The UTC MJE13009D is intended to be used in

energy-saving lights electronic ballast, high frequency switching

power supplies, high frequency power transforms or common

power amplifiers, etc.

FEATURES

* High Breakdown Voltage

* High Current Capability

* High Switching Speed

* High Reliability

* RoHS-Compliant Product

INTERNAL SCHEMATIC DIAGRAM

C (2)

B (1)

E (3)

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

TO-220

Lead Free Plating

Halogen Free

MJE13009DG-TA3-T

MJE13009DL-TA3-T

Tube

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MJE13009D

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_C=25°C)

PARAMETER

SYMBOL

V_CEV

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector- Emitter Voltage (V_BE=-1.5V)

Collector-Emitter Voltage (I_B=0)

Emitter-Base Voltage

700

400

Collector Current

Base Current

Pulse(Note 2)

I_CM

I_B

Pulse(Note 2)

I_BM

I_E

Emitter Current

Pulse(Note 2)

I_EM

Total Power Dissipation

T_A=25°C

T_C=25°C

P_D

Linear Derating Factor Above

Total Power Dissipation

mW/°C

100

Linear Derating Factor Above

Operating Junction Temperature

800

mW/°C

°C

T_J

-65 ~ +150

Storage Temperature

T_STG

-65 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolu te maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C /W

Junction to Ambient

Junction to Case

θ_JC

3.13

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note)

Collector-Emitter Sustaining Voltage

V_CEO(SUS)I_C=10mA, I_B=0

400

_CEV=Rated Value,

_BE(OFF)= -1.5V

Collect Cut-Off Current

I_CEV

I_EBO

T_C=100°C

Emitter Cut-Off Current

V_EB=9V, I_C=0

ON CHARACTERISTICS (Note)

V_CE=5V, I_C=5A

h_FE

DC Current Gain

V_CE=5V, I_C=8A

I_C=5A, I_B=1A

1.5

V_CE(SAT)

Collector-Emitter Saturation Voltage

I_C=8A, I_B=1.6A

T_C=100°C

I_C=12A, I_B=3A

I_C=5A, I_B=1A

1.2

1.6

1.5

V_BE(SAT)

Base -Emitter Saturation Voltage

I_C=8A, I_B=1.6A

ON CHARACTERISTICS (Note)

Current Gain Bandwidth Product

Output Capacitance

f_T

MH_Z

V_CE=10V, I_C=500mA, f=1MH_Z

V_CB=10V, I_C=0, f=0.1MH_Z

C_OB

180

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MJE13009D

NPN SILICON TRANSISTOR

SWITCHING CHARACTERISTICS

RESISTIVE LOAD

Delay Time

t_D

t_R

t_S

t_F

0.06 0.1

μs

0.45

1.3

Rise Time

V_CC=125V, I_C=8A, I_B1=I_B2=1.6A,

t_P=25μs, Duty Cycle≤1%

Storage Time

0.2

0.7

Fall Time

INDUCTIVE LOAD, CLAMPED

Voltage Storage Time

Crossover Time

t_S

t_C

0.92 2.3

0.12 0.7

μs

I_C=8A, V_CLAMP=300V,I_B1=1.6A,

V_BE(OFF)=5V, T_C=100°C

Note: Pulse Test: Pulse Width=300μs, Duty Cycle=2%.

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MJE13009D

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector Current vs. Collector-Emitter Voltage

120

Collector Current vs. Collector-Base Voltage

1200

100

1000

800

600

400

200

400

600

800 1000

200

400

600

800 1000

Collector-Emitter Voltage, V_CEV(V)

Collector-Base Voltage, V_CB(V)

Collector Current vs. Collector-

Emitter Voltage

Collector Current vs. Collector-

Emitter Voltage

600

I_B=25.75mA

I_B=20.75mA

I_B=1048μA

I_B=848μA

I_B=648μA

I_B=448μA

I_B=248μA

500

400

300

200

100

I_B=15.75mA

I_B=10.75mA

I_B=5.75mA

Collector-Emitter Voltage, V_CE(V)

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MJE13009D

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS (Cont.)

Collector Current vs. Collector-

Emitter Voltage

Collector Current vs. Collector-

Emitter Voltage

I_B=856mA

I_B=756mA

I_B=656mA

I_B=556mA

I_B=456mA

I_B=429mA

I_B=329mA

I_B=229mA

I_B=129mA

I_B=356mA

I_B=256mA

I_B=156mA

9 10

Collector-Emitter Voltage, V_CE(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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