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MJE13009L-P-T3P-T [UTC]

Power Bipolar Transistor;
MJE13009L-P-T3P-T
型号： MJE13009L-P-T3P-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor

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UNISONIC TECHNOLOGIES CO., LTD  
MJE13009-P  
NPN SILICON TRANSISTOR  
SWITCHMODE SERIES NPN  
SILICON POWER  
TRANSISTORS  
„
DESCRIPTION  
The MJE13009-P is designed for high-voltage, high-speed  
power switching inductive circuits where fall time is critical. They  
are particularly suited for 115 and 220V switch mode applications  
such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
„
FEATURES  
* VCEO 400V and 300 V  
* Reverse Bias SOA with Inductive Loads @ TC = 100°C  
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C  
tC @ 8 A, 100°C is 120 ns (Typ).  
* 700 V Blocking Capability  
* SOA and Switching Applications Information.  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
2
C
C
3
E
E
MJE13009L-P-T3P-T  
MJE13009L-P-TA3-T  
MJE13009G-P-T3P-T  
MJE13009G-P-TA3-T  
TO-3P  
Tube  
Tube  
TO-220  
www.unisonic.com.tw  
1 of 9  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R223-008, A  
MJE13009-P  
„ ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
NPN SILICON TRANSISTOR  
PARAMETER  
Collector-Emitter Voltage  
SYMBOL  
VCEO  
VCEV  
VEBO  
IC  
RATINGS  
UNIT  
400  
V
V
V
Collector-Emitter Voltage (VBE=-1.5V)  
Emitter Base Voltage  
700  
9
Continuous  
12  
Collector Current  
Base Current  
A
Peak (Note 3)  
Continuous  
Peak (Note 3)  
Continuous  
Peak (Note 3)  
TO-220  
ICM  
24  
IB  
6
A
A
IBM  
12  
IE  
18  
Emitter Current  
Power Dissipation  
Derate above 25°C  
IEM  
36  
2
80  
W
TO-3P  
PD  
TO-220  
16  
mW/°C  
TO-3P  
640  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
°C  
°C  
TSTG  
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
°C/W  
TO-220  
TO-3P  
TO-220  
TO-3P  
54  
21  
Junction to Ambient  
Junction to Case  
θJA  
4
θJC  
°C/W  
1.55  
„ ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS (Note)  
Collector- Emitter Sustaining Voltage  
Collector Cutoff Current  
VCEO  
ICEV  
IC = 10mA, IB = 0  
400  
V
V
V
BE(OFF) = 1.5VDC  
BE(OFF) = 1.5VDC, TC = 100°C  
1
5
1
mA  
mA  
VCBO=Rated Value  
Emitter Cutoff Current  
IEBO  
VEB = 9VDC, IC = 0  
ON CHARACTERISTICS (Note)  
hFE1  
IC = 5A, VCE = 5V  
IC = 8A, VCE = 5V  
IC = 5A, IB = 1A  
40  
30  
1
DC Current Gain  
hFE 2  
V
V
V
V
V
V
V
IC = 8A, IB = 1.6A  
IC = 12A, IB = 3A  
1.5  
3
Current-Emitter Saturation Voltage  
VCE(SAT)  
IC = 8A, IB = 1.6A, TC = 100°C  
IC = 5A, IB = 1A  
2
1.2  
1.6  
1.5  
Base-Emitter Saturation Voltage  
VBE(SAT) IC = 8A, IB = 1.6A  
IC = 8A, IB = 1.6A, TC = 100°C  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
„ ELECTRICAL CHARACTERISTICS(Cont.)  
NPN SILICON TRANSISTOR  
PARAMETER  
DYNAMIC CHARACTERISTICS  
Transition frequency  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
fT  
IC = 500mA, VCE = 10V, f = 1MHz  
VCB = 10V, IE = 0, f = 0.1MHz  
4
MHz  
pF  
Output Capacitance  
COB  
180  
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
tDLY  
tR  
0.06 0.1  
µs  
µs  
µs  
µs  
V
CC = 125Vdc, IC = 8A  
0.45  
1.3  
1
3
I
B1 = IB2 = 1.6A, tP = 25μs  
tS  
Duty Cycle ≤1%  
tF  
0.2  
0.7  
Inductive Load, Clamped (Table 1, Fig. 13)  
Voltage Storage Time  
tS  
tC  
IC=8A, VCLAMP=300V, IB1=1.6A  
0.92 2.3  
0.12 0.7  
µs  
µs  
VBE(OFF) = 5V, TC = 100°C  
Crossover Time  
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
NPN SILICON TRANSISTOR  
„
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE  
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING  
RESISTIVE SWITCHING  
+5V  
VCC  
33  
1N4933  
MJE210  
L
MR826*  
0.001µF  
1k  
1N4933  
33  
5V  
VCLAMP  
IC  
2N2222  
PW  
RB  
DUTY CYCLE ≤ 10%  
tR, tF ≤ 10 ns  
68  
*SELECTED FOR . 1 kV  
VCE  
1k  
+5V  
5.1k  
51  
IB  
1k  
D.U.T.  
1N4933  
270  
2N2905  
47  
MJE200  
0.02µF  
100  
Note:  
1/2W  
PW and VCC Adjusted for Desired IC  
RB Adjusted for Desired IB1  
-VBE(OFF)  
V
CC = 125V  
Coil Data:  
Ferroxcube Core #6656  
Full Bobbin (~16 Turns) #16  
RC = 15Ω  
D1 = 1N5820 or Equiv.  
RB = Ω  
GAP for 200μH/20A  
LCOIL = 200μH  
VCC = 20V  
VCLAMP = 300VDC  
+10V  
25µs  
0
-8V  
tR, tF < 10 ns  
Duty Cycle = 1.0%  
RB and RC adjusted  
for desired IB and IC  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
NPN SILICON TRANSISTOR  
„
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS  
CIRCUIT  
LOAD LINE DIAGRAMS  
TIME DIAGRAMS  
TURN–ON (FORWARD BIAS) SOA  
tON ≤ 10 ms  
24A  
SERIES SWITCHING  
REGULATOR  
DUTY CYCLE ≤ 10%  
PD = 4000 W  
2
T
C = 100°C  
350V  
TURN–OFF (REVERSE BIAS) SOA  
1.5 V ≤ VBE(OFF) ≤ 9.0 V  
12A  
TURN–ON  
DUTY CYCLE ≤ 10%  
VCC  
VOUT  
TURN–OFF  
+
1
1
400V  
700V  
VCC  
COLLECTOR VOLTAGE  
RINGING CHOKE  
INVERTER  
TURN–ON (FORWARD BIAS) SOA  
IC  
24A  
tON ≤10 ms  
DUTY CYCLE ≤10%  
PD = 4000 W  
2
tOFF  
TC = 100 C  
12A  
VCC  
VOUT  
tON  
350V  
t
N
TURN–OFF (REVERSE BIAS) SOA  
LEAKAGE SPIKE  
VCE  
1.5 V ≤VBE(off) ≤9.0 V  
TURN–OFF  
DUTY CYCLE ≤10%  
+
VCC  
N(VO)  
TURN–ON  
VCC  
+
VCC  
1
1
400V  
700V  
t
VCC+N(VOUT)  
COLLECTOR VOLTAGE  
PUSH–PULL  
INVERTER/CONVERTER  
VOUT  
VCC  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
NPN SILICON TRANSISTOR  
„
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE  
IC(A)  
3
TC(°C)  
25  
100  
25  
100  
25  
100  
25  
tSV(ns)  
770  
1000  
630  
tRV(ns)  
100  
230  
72  
100  
55  
tFI(ns)  
150  
160  
26  
tTI(ns)  
200  
200  
10  
30  
2
tC(ns)  
240  
320  
100  
180  
77  
120  
41  
54  
5
8
820  
55  
720  
920  
27  
50  
70  
8
640  
800  
20  
32  
17  
24  
2
4
12  
100  
„
SWITCHING TIME NOTES  
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and  
voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE  
power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate  
measurements must be made on each waveform to determine the total switching time. For this reason, the following  
new terms have been defined.  
t
t
t
t
SV = Voltage Storage Time, 90% IB1 to 10% VCEM  
RV = Voltage Rise Time, 10–90% VCEM  
FI = Current Fall Time, 90–10% ICM  
TI = Current Tail, 10–2% ICM  
tC = Crossover Time, 10% VCEM to 10% ICM  
An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.  
For the designer, there is minimal switching loss during storage time and the predominant switching power losses  
occur during the crossover interval and can be obtained using the standard equation from AN–222:  
PSWT = 1/2 VCCIC(tC) f  
Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test currents  
this relationship may not be valid.  
As is common with most switching transistors, resistive switching is specified at 25°C and has become a  
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented  
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which  
are guaranteed at 100°C.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARATERISTICS  
Fig. 3 Forward Bias Power Derating  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second breakdown.  
Safe operating area curves indicate IC - VCE limits of the transistor  
that must be observed for reliable operation; i.e., the transistor  
must not be subjected to greater dissipation than the curves  
indicate.  
1
Second Breakdown  
Derating  
0.8  
The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable  
depending on power level. Second breakdown pulse limits are  
valid for duty cycles to 10% but must be derated when TC ≥ 25°C.  
Second breakdown limitations do not derate the same as thermal  
limitations. Allowable current at the voltages shown on Fig. 1 may  
be found at any case temperature by using the appropriate curve  
on Fig. 3.  
0.6  
0.4  
Thermal  
Derating  
TJ(PK) may be calculated from the data in Fig. 4. At high  
case temperatures, thermal limitations will reduce the power  
that can be handled to values less than the limitations imposed  
by second breakdown. Use of reverse biased safe operating  
area data (Fig. 2) is discussed in the applications information  
section.  
0.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, TC (°C)  
Fig. 4 Typical Thermal Response [ZθJC(t)]  
1
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P(PK)  
0.1  
ZθJC(t) = r(t) θJC  
0.05  
0.02  
θ
JC = 1.25°C/W MAX  
0.07  
0.05  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t1  
t1  
0.03  
0.02  
t2  
TJ(PK) – TC = P(PK) ZθJC(t)  
0.01  
Duty Cycle, D = t1/t2  
Single Pulse  
0.05 0.1  
0.01  
0.01 0.02  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500 1.0k  
Time, t (ms)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS (Cont.)  
Fig. 9 Collector Cutoff Region  
Fig. 10 Capacitance  
10k  
1k  
4k  
2k  
TJ = 25°C  
VCE = 250V  
CIB  
TJ = 150°C  
125°C  
1k  
800  
600  
100  
100°C  
400  
10  
1
75°C  
50°C  
COB  
200  
100  
80  
25°C  
60  
40  
REVERSE  
-0.2  
Base–Emitter Voltage, VBE (V)  
FORWARD  
0.1  
-0.4  
0
+0.2 +0.4  
+0.6  
0.1 0.2 0.5 1 2 5 10 20 50 100  
Reverse Voltage, VR (V)  
200  
500  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 9  
www.unisonic.com.tw  
QW-R223-008, A  
MJE13009-P  
■ RESISTIVE SWITCHING PERFORMANCE  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
9 of 9  
www.unisonic.com.tw  
QW-R223-008, A  

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