MJE13009L-T3P-TA [UTC]
Transistor;
| 型号： | MJE13009L-T3P-TA |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD.
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
ꢀ
DESCRIPTION
The MJE13009 is designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220 V switchmode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
TO-3P
ꢀ
FEATURES
* VCEO 400 V and 300 V
*Pb-free plating product number:MJE13009L
* Reverse Bias SOA with Inductive Loads @ TC = 100℃
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃
tc @ 8 A, 100℃ is 120 ns (Typ).
ꢀPIN CONFIGURATION
PIN NO.
PIN NAME
Base
* 700 V Blocking Capability
* SOA and Switching Applications Information.
1
2
3
Collector
Emitter
ꢀ ORDERING INFORMATION
Order Number
Package
TO-3P
Packing
Tube
Normal
Lead free
MJE13009-T3P-T MJE13009L-T3P-T
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD
1
QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
IEBO
IC
RATINGS
UNIT
400
700
9
V
V
V
Emitter Base Voltage
Continuous
12
24
6
Collector Current
Peak*
A
A
A
ICM
Continuous
IB
Base Current
Peak*
IBM
12
18
36
Continuous
IE
Emitter Current
Peak*
IEM
Total Power Dissipation @ Ta = 25℃
Derate above 25℃
2
16
W
mW/℃
W
mW/℃
℃
PD
PD
Total Power Dissipation @ TC = 25℃
Derate above 25℃
100
800
Junction Temperature
TJ
+150
-40 ~ +150
℃
Storage Temperature
TSTG
*Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
ꢀ
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
℃/W
℃/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
θJC
1.55
ꢀ ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VCEO
ICBO
IEBO
IC = 10mA, IB = 0
400
V
V
V
BE(off) = 1.5Vdc
BE(off) = 1.5Vdc, TC = 100℃
1
5
1
mA
mA
VCBO=Rated Value
Emitter Cutoff Current
VEB = 9Vdc, IC = 0
*ON CHARACTERISTICS
hFE1
hFE 2
IC = 5A,VCE = 5V
IC = 8A,VCE = 5V
IC = 5A, IB = 1A
40
30
1
DC Current Gain
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 8A, IB = 1.6A, TC = 100℃
IC = 5A, IB = 1A
1.5
3
2
Current-Emitter Saturation Voltage
VCE(sat)
V
V
1.2
1.6
1.5
Base-Emitter Saturation Voltage
VBE(sat) IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = 100℃
DYNAMIC CHARACTERISTICS
Transition frequency
fT
IC = 500mA, VCE = 10V, f = 1MHz
VCB = 10V, IE = 0, f = 0.1MHz
4
MHz
pF
Output Capacitance
Cob
180
0.06 0.1
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
tDLY
tR
µs
µs
µs
µs
VCC = 125Vdc, IC = 8A
0.45
1.3
1
3
IB1 = IB2 = 1.6A, tP = 25μs
tS
Duty Cycle ≤1%
tF
0.2
0.7
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
Crossover Time
tsv
tc
IC=8A, Vclamp=300V, IB1=1.6A
0.92 2.3
0.12 0.7
µs
µs
VBE(off) = 5V, TC = 100℃
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
UNISONIC TECHNOLOGIES CO., LTD
2
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QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
CLASSIFICATION of hFE1
RANK
A
B
C
D
E
F
RANGE
8 ~ 16
15 ~ 21
20 ~ 26
25 ~ 31
30 ~ 36
35 ~ 40
ꢀ
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+125V
+5V
VCC
33
1N4933
MJE210
L
MR826*
0.001μF
1N4933
33
RC
5V
Vclamp
IC
TUT
PW
2N2222
RB
1k
SCOPE
RB
DUTY CYCLE≤10%
tR, tF ≤10 ns
68
*SELECTED FOR . 1 kV
1k
+5V
5.1k
51
IB
VCE
D1
1k
D.U.T.
1N4933
270
2N2905
MJE200
0.02μF
-4.0V
47
100
NOTE
1/2W
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
–VBE(off)
VCC = 125 V
RC = 15 Ω
D1 = 1N5820 or Equiv.
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200 µH/20 A
Lcoil = 200 µH
VCC = 20 V
Vclamp = 300 Vdc
RB = Ω
+10V
0
25 µs
OUTPUT WAVEFORMS
tF CLAMPED
IC
tF UNCLAMPED 9 t2
t1 ADJUSTED TO
OBTAIN IC
ICM
Test Equipment
Scope–Tektronics
475 or Equivalent
t
Lcoil (ICM
VCC
)
t1≈
t2≈
t1
tF
-8V
VCE
Lcoil (ICM
)
VCEM
Vclamp
tR, tF < 10 ns
Vclamp
Duty Cycle = 1.0%
RB and RC adjusted
t2
TIME
for desired IB and IC
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
CIRCUIT
LOAD LINE DIAGRAMS
TIME DIAGRAMS
IC
TURN–ON (FORWARD BIAS) SOA
ON ≤10 ms
DUTY CYCLE≤10%
24A
t
SERIES SWITCHING
REGULATOR
PD = 4000 W
2
TC = 100°C
t
350V
TIME
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤VBE(off) ≤9.0 V
12A
VCE
TURN–ON
DUTY CYCLE≤10%
VCC
VCC
VOUT
TURN–OFF
+
1
1
VCC 400V
700V
t
COLLECTOR VOLTAGE
TIME
RINGING CHOKE
INVERTER
TURN–ON (FORWARD BIAS) SOA
ON ≤10 ms
DUTY CYCLE≤10%
IC
24A
t
PD = 4000 W
2
tOFF
TC = 100°C
VCC
VOUT
tON
350V
t
N
TURN–OFF (REVERSE BIAS) SOA
12A
LEAKAGE SPIKE
VCE
1.5 V ≤VBE(off) ≤9.0 V
DUTY CYCLE≤10%
TURN–OFF
TURN–ON
+
VCC
N(VO)
VCC
+
VCC
1
1
700V
400V
t
VCC+N(VOUT )
COLLECTOR VOLTAGE
PUSH–PULL
INVERTER/CONVERTER
TURN–ON (FORWARD BIAS) SOA
tON ≤10 ms
IC
24A
DUTY CYCLE≤10%
tOFF
tON
PD = 4000 W 2
350V
TC = 100°C
t
VOUT
VCE
TURN–OFF (REVERSE BIAS) SOA
12A
1.5 V ≤VBE(off) ≤9.0 V
TURN–ON
VCC
2 VCC
VCC
DUTY CYCLE≤10%
TURN–OFF
2 VCC
+
VCC
1
700V
COLLECTOR VOLTAGE
1
400V
t
IC
TURN–ON (FORWARD BIAS) SOA
tON ≤10 ms
SOLENOID DRIVER
24A
DUTY CYCLE≤10%
VCC
tOFF
tON
PD = 4000 W 2
350V
TC = 100°C
t
SOLENOID
12A
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤VBE(off) ≤9.0 V
VCE
DUTY CYCLE≤10%
TURN–OFF
TURN–ON
VCC
VCC
2 VCC
+
1
1
400V
700V
COLLECTOR VOLTAGE
t
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
IC(A)
3
TC(℃)
25
100
25
100
25
100
25
tsv(ns)
770
1000
630
trv(ns)
100
230
72
100
55
tfi(ns)
150
160
26
tti(ns)
200
200
10
30
2
tc(ns)
240
320
100
180
77
120
41
54
5
8
820
55
720
920
27
50
70
8
640
800
20
32
17
24
2
4
12
100
ꢀ
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage
waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
t
sv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi ≈ tc. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are
guaranteed at 100℃.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARATERISTICS
Figure 2. Reverse Bias Switching Safe Operating Area
Figure 1. Forward Bias Safe Operating Area
100
50
14
12
10
10μs
20
10
5
100μs
1ms
T
C ≤100℃
IB1 = 2.5 A
2
1
0.5
TC = 25℃
8
6
4
dc
VBE(off) = 9V
5V
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
0.2
0.1
0.05
2
0
CURVES APPLY BELOW RATED VCEO
3V
0.02
0.01
1.5V
100 200 300 400 500 600 700 800
COLLECTOR–EMITTER CLAMP VOLTAGE, VCBO (V)
5
7
10
20 30
50 70 100
200 300 500
0
COLLECTOR–EMITTER VOLTAGE, VCE (V)
Figure 3. Forward Bias Power Derating
1
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC–VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
The data of Figure1 is based on TC = 25℃; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are
THERMAL
DERATING
valid for duty cycles to 10% but must be derated when T ≥25℃.
C
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure 1
may be found at any case temperature by using the appropriate
curve on Figure 3.
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Figure 2) is discussed in the applications information
section.
0.2
0
20
40
60
80
100
120
140
160
CASE TEMPERATURE, TC (°C)
Figure 4. Typical Thermal Response [ZθJC(t)]
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.1
Z
θJC (t) = r(t) θJC
0.05
0.02
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.07
0.05
t1
0.03
0.02
READ TIME AT t
1
t2
TJ(pk) –TC = P(pk) ZθJC(t)
0.01
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.05 0.1
0.01
0.01 0.02
0.2
0.5
1
2
5
10
20
50
100
200
500 1.0k
TIME, t (ms)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS( cont.)
Figure 6. Collector Saturation Region
2
Figure 5. DC Current Gain
50
30
20
VCE = 5V
1.6
TJ = 150℃
25℃
3A
IC = 1A
5A
8A
12A
1.2
0.8
10
7
0.4
0
TJ = 25℃
5
0.2 0.3 0.5 0.7
1
2
3
5
7
10
20
0.050.07 0.1
0.2 0.3
0.5 0.7
1
2
3
5
COLLECTOR CURRENT, IC (A)
BASE CURRENT, IB (A)
Figure 7. Base–Emitter Saturation Voltage
Figure 8. Collector–Emitter Saturation Voltage
1.4
1.2
1
0.7
0.6
0.5
IC/IB = 3
IC/IB = 3
TJ = 150℃
0.4
0.3
0.2
0.8
0.6
0.4
25℃
25℃
TJ = 150℃
0.1
0
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0.2 0.3 0.5 0.7
1
2
3
5
7
10
20
COLLECTOR CURRENT, IC (A)
COLLECTOR CURRENT, IC (A)
Figure 9. Collector Cutoff Region
Figure 10. Capacitance
10k
1k
4k
2k
TJ = 25℃
VCE = 250V
C
ib
TJ = 150℃
125℃
1k
800
600
100
100℃
400
10
1
75℃
50℃
Cob
200
100
80
60
25℃
REVERSE
-0.2
BASE–EMITTER VOLTAGE, VBE (V)
FORWARD
0.1
-0.4
40
0
+0.2 +0.4
+0.6
0.1 0.2 0.5 1
2
5
10 20 50
REVERSE VOLTAGE, VR (V)
100
200
500
UNISONIC TECHNOLOGIES CO., LTD
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QW-R214-011,A
MJE13009
NPN EPITAXIAL SILICON TRANSISTOR
■ RESISTIVE SWITCHING PERFORMANCE
Figure 11. Turn–On Time
Figure 12. Turn–Off Time
1k
2k
tS
VCC = 125V
IC/IB = 5
700
TJ = 25℃
1k
500
700
VCC = 125V
IC/IB = 5
TJ = 25℃
300
500
200
tR
300
100
200
tF
tDLY @ VBE(off) = 5V
70
50
100
0.2 0.3 0.5 0.7
1
2
3
5
7
10
20
0.2 0.3 0.5 0.7
1
2
5
7
10
20
COLLECTOR CURRENT, IC (A)
COLLECTOR CURRENT, IC (A)
Figure 13. Typical Inductive Switching Waveforms
(at 300V and 12A with IB1 = 2.4A and VBE(off) = 5V)
IC
VCE
IC
VCE
TIME 20 ns/DIV
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R214-011,A
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