MJE13009L-XS-T3P-T [UTC]

Power Bipolar Transistor,;
MJE13009L-XS-T3P-T
型号: MJE13009L-XS-T3P-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor,

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
MJE13009-XS  
NPN SILICON TRANSISTOR  
SWITCHMODE SERIES NPN  
SILICON POWER  
TRANSISTORS  
1
1
TO-247S  
TO-220  
DESCRIPTION  
The MJE13009-XS is designed for high-voltage, high-speed  
power switching inductive circuits where fall time is critical. They  
are particularly suited for 115 and 220V switch mode applications  
such as Switching Regulators, Inverters, Motor Controls,  
Solenoid/Relay drivers and Deflection circuits.  
1
1
TO-3P  
TO-3PB  
FEATURES  
* VCEO 400V and 300 V  
*700 V Blocking Capability  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
B
B
B
B
2
3
E
E
E
E
MJE13009L-XS-TA3-T  
MJE13009L-XS-T3P-T  
MJE13009L-XS-T3B-T  
MJE13009L-XS-T47S-T  
MJE13009G-XS-TA3-T  
MJE13009G-XS-T3P-T  
MJE13009G-XS-T3B-T  
MJE13009G-XS-T47S-T  
TO-220  
TO-3P  
C
C
C
C
Tube  
Tube  
Tube  
Tube  
TO-3PB  
TO-247S  
Note: Pin Assignment: B: Base  
C: Collector  
E: Emitter  
MJE13009G-XS-TA3-T  
(1) T: Tube  
(1)Packing Type  
(2)Package Type  
(3)Green Package  
(2) TA3: TO-220, T3P: TO-3P, T3B: TO-3PB  
T47S: TO-247S  
(3) G: Halogen Free and Lead Free, L: Lead Free  
MARKING  
UTC  
MJE13009  
L: Lead Free  
G: Halogen Free  
Date Code  
Lot Code  
1
www.unisonic.com.tw  
Copyright © 2020 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R223-027.C  
MJE13009-XS  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)  
PARAMETER  
Collector-Emitter Voltage  
SYMBOL  
VCEO  
VCEV  
VEBO  
IC  
RATINGS  
UNIT  
400  
V
V
V
Collector-Emitter Voltage (VBE=-1.5V)  
Emitter Base Voltage  
700  
9
Continuous  
8
Collector Current  
A
Peak (Note 3)  
TO-220  
ICM  
16  
2
5.8  
W
W
Power Dissipation  
TO-3P/TO-3PB  
TO-247S  
4.2  
W
PD  
TO-220  
16  
mW/°C  
mW/°C  
mW/°C  
°C  
Derate above 25°C  
TO-3P/TO-3PB  
TO-247S  
47  
33  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
TSTG  
°C  
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
21  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220  
Junction to Ambient  
Junction to Case  
TO-3P/TO-3PB  
TO-247S  
θJA  
30  
TO-220  
1.25  
0.6  
TO-3P/TO-3PB  
TO-247S  
θJC  
0.625  
ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified)  
PARAMETER  
OFF CHARACTERISTICS (Note)  
Collector- Emitter Sustaining Voltage  
Collector Cutoff Current  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
VCEO  
ICEV  
IC = 10mA, IB = 0  
400  
V
VBE(OFF) = 1.5VDC  
VBE(OFF) = 1.5VDC, TC = 100  
VEB = 9VDC, IC = 0  
1
5
1
mA  
mA  
VCBO=Rated Value  
Emitter Cutoff Current  
IEBO  
ON CHARACTERISTICS (Note)  
hFE1  
IC = 3A, VCE = 5V  
IC = 8A, VCE = 5V  
8
40  
30  
1
DC Current Gain  
hFE 2  
Current-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DYNAMIC CHARACTERISTICS  
Output Capacitance  
VCE(SAT) IC = 5A, IB = 1A  
VBE(SAT) IC = 5A, IB = 1A  
V
V
1.2  
COB  
VCB = 10V, IE = 0, f = 0.1MHz  
100  
0.06 0.1  
pF  
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
tDLY  
tR  
µs  
µs  
µs  
µs  
VCC = 125Vdc, IC = 8A  
IB1 = IB2 = 1.6A, tP = 25μs  
Duty Cycle ≤1%  
0.45  
1.3  
1
3
tS  
tF  
0.2  
0.7  
Inductive Load, Clamped (Table 1, Fig. 13)  
Voltage Storage Time  
tS  
tC  
IC=8A, VCLAMP=300V, IB1=1.6A  
VBE(OFF) = 5V, TC = 100℃  
0.92 2.3  
0.12 0.7  
µs  
µs  
Crossover Time  
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%.  
UNISONICTECHNOLOGIESCO.,LTD  
2 of 3  
www.unisonic.com.tw  
QW-R223-027.C  
MJE13009-XS  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
vs.  
itter Saturation Voltage  
lector  
Gain vs. Col  
Current  
Base-Em  
IC/IB=5  
DC Current  
Collector  
Current  
50  
45  
1.4  
1.2  
VCE=5V  
TA=125°C  
40  
35  
30  
25  
20  
15  
10  
1
0.8  
0.6  
0.4  
0.2  
0
75°C  
25°C  
TA=25°C  
125°C  
75°C  
0.1  
5
0
0.01  
1
10  
0.001  
0.01  
0.1  
10  
1
rrent, I (A)  
Collector Cu  
rrent, I (A)  
Collector Cu  
C
C
Collector-Emitter Saturation Voltage vs.  
Collector Current  
1.6  
1.2  
0.8  
0.4  
0
IC/IB=5  
TA=125°C  
75°C  
25°C  
0.01  
0.1  
1
10  
Collector Current, IC (A)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 3  
www.unisonic.com.tw  
QW-R223-027.C  

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