MMBT1015L-GR-AN3-R [UTC]

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR; 低频PNP晶体管放大器
MMBT1015L-GR-AN3-R
型号: MMBT1015L-GR-AN3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
低频PNP晶体管放大器

晶体 放大器 小信号双极晶体管 光电二极管
文件: 总4页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
MMBT1015  
PNP SILICON TRANSISTOR  
LOW FREQUENCY PNP  
AMPLIFIER TRANSISTOR  
3
3
1
1
2
FEATURES  
2
*Collector-Emitter Voltage:  
BVCEO=-50V  
*Collector current up to 150mA  
*High hFE linearity  
SOT-23  
SOT-523  
3
3
*Complement to MMBT1815  
1
2
1
2
SOT-113  
SOT-323  
*Pb-free plating product number: MMBT1015L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
E
E
E
E
2
B
B
B
B
3
C
C
C
C
MMBT1015-x-AC3-R  
MMBT1015-x-AE3-R  
MMBT1015-x-AL3-R  
MMBT1015-x-AN3-R  
MMBT1015L-x-AC3-R  
MMBT1015L-x-AE3-R  
MMBT1015L-x-AL3-R  
MMBT1015L-x-AN3-R  
SOT-113  
SOT-23  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Reel  
SOT-323  
SOT-523  
MMBT1015L-x-AC3-R  
(1) R: Tape Reel  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(2) AC3: SOT-113, AE3: SOT-23, AL3: SOT323,  
AN3: SOT-523  
(3) x: refer to Classification of h  
FE1  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
A4  
Lead Plating  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-015,E  
MMBT1015  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
-50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
-50  
V
VEBO  
-5  
V
SOT-23  
SOT-523/SOT-113/SOT-323  
250  
mW  
mW  
mA  
mA  
Collector Dissipation  
PC  
200  
Collector Current  
Base Current  
IC  
IB  
-150  
-50  
Junction Temperature  
Storage Temperature  
TJ  
125  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25  
°
C, unless otherwise specified)  
PARAMETER SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cut-off Current  
BVCBO Ic = -100  
BVCEO Ic = -10mA, IB = 0  
BVEBO IE = -10 A, Ic = 0  
µ
A, IE = 0  
-50  
-50  
-5  
V
V
V
V
V
µ
VCE(SAT) Ic = -100mA, IB = -10mA  
VBE(SAT) Ic = -100mA, IB = -10mA  
-0.1 -0.3  
-1.1  
ICBO  
IEBO  
hFE1  
hFE2  
fT  
VCB = -50V, IE = 0  
-100 nA  
-100 nA  
700  
Emitter Cut-off Current  
VEB = -5V, Ic = 0  
VCE = -6V, Ic = -2mA  
VCE = -6V, Ic = -150mA  
VCE = -10V, Ic = -1mA  
VCB = -10V, IE = 0, f = 1MHz  
Ic = -0.1mA, VCE = -6V  
120  
25  
DC Current Gain  
Transition Frequency  
Output Capacitance  
80  
MHz  
COB  
4.0 7.0  
0.5  
pF  
Noise Figure  
NF  
6
dB  
RG= 1k, f = 100Hz  
CLASSIFICATION OF hFE1  
RANK  
Y
GR  
BL  
350-700  
RANGE  
120-240  
200-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-015,E  
www.unisonic.com.tw  
MMBT1015  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
DC Current Gain  
-5 0  
-4 0  
3
10  
V
CE =-6V  
I
I
B
B
=- 300µA  
2
10  
-30  
-2 0  
=- 250µA  
=-200µA  
I
B
1
10  
I
I
B
=- 150µA  
=- 100µA  
-1 0  
0
B
I
B
=-50µA  
0
10  
-0  
-4  
-8  
-12  
-16  
-20  
-1  
-10  
0
1
2
3
-1 0  
-1 0  
-10  
-10  
Collector-Emitter Voltage ( V)  
Base-Emitter on Voltage  
CollectorCurrent, Ic (mA)  
Saturation Voltage  
2
1
-10  
-10  
Ic=10*I  
B
V
CE =-6V  
1
0
(SAT)  
BE  
V
-10  
-1 0  
-1  
-1 0  
0
-10  
V
CE(SAT)  
-2  
-1 0  
-1  
-10  
-1  
-1 0  
0
1
2
3
0
- 0. 2  
- 0. 4  
- 0 .6  
-0 .8  
- 1. 0  
-10  
-10  
-10  
-1 0  
Base-Emitter Voltage(V)  
Collector Current, Ic (mA)  
Current Gain-Bandwidth  
Product  
Collector Output  
Capacitance  
3
2
10  
10  
-1  
-10  
VCE =- 6V  
f=1MHz  
IE=0  
2
10  
1
10  
1
0
10  
10  
-1  
10  
0
10  
-1  
-10  
0
1
2
0
-1 0  
1
2
3
-10  
-1 0  
-10  
-1 0  
-1 0  
-10  
Collector Current, Ic (mA)  
Collector-BaseVoltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-015,E  
www.unisonic.com.tw  
MMBT1015  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-015,E  
www.unisonic.com.tw  

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