MMBT1815-BL-AL3-R [UTC]

HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR; 高频NPN晶体管放大器


型号：	MMBT1815-BL-AL3-R
厂家：	Unisonic Technologies
描述：	HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR 高频NPN晶体管放大器晶体放大器晶体管
文件：	总4页 (文件大小：55K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MMBT1815

NPN SILICON TRANSISTOR

HIGH FREQUENCY NPN

AMPLIFIER TRANSISTOR

ꢀ

FEATURES

*Collector-Emitter Voltage:

BV_CEO=50V

*Collector current up to 150mA

*High h_FElinearity

SOT-23

SOT-523

*Complement to MMBT1015

SOT-113

SOT-323

*Pb-free plating product number: MMBT1815L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

MMBT1815-x-AC3-R

MMBT1815-x-AE3-R

MMBT1815-x-AL3-R

MMBT1815-x-AN3-R

MMBT1815L-x-AC3-R

MMBT1815L-x-AE3-R

MMBT1815L-x-AL3-R

MMBT1815L-x-AN3-R

SOT-113

SOT-23

Tape Reel

SOT-323

SOT-523

MMBT1815L-x-AC3-R

(1)Packing Type

(2)Package Type

(3)Rank

(1) R: Tape Reel

(2) AC3: SOT-113, AE3: SOT-23, AL3: SOT-323,

AN3: SOT-523

(3) x: refer to Classification of h

FE1

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

ꢀ

MARKING

Lead Plating

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MMBT1815

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

SOT-23

SOT-523/SOT-113/SOT-323

250

200

150

Collector Dissipation (Ta=25

P_C

Collector Current

Base Current

I_C

I_B

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25

C, unless otherwise specified)

PARAMETER SYMBOL

TEST CONDITIONS MIN TYP MAX UNIT

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-off Current

V_CE(SAT)Ic = 100mA, I_B= 10mA

V_BE(SAT)Ic = 100mA, I_B= 10mA

0.1

0.25

1.0

I_CBO

I_EBO

h_FE1

h_FE2

f_T

V_CB= 60V, I_E= 0

V_EB= 5V, Ic = 0

100

700

Emitter Cut-off Current

V_CE= 6V, Ic = 2mA

120

DC Current Gain

V_CE= 6V, Ic = 150mA

Transition Frequency

Output Capacitance

V_CE= 10V,Ic = 50mA

MHz

C_OB

V_CB= 10V, I_E= 0, f = 1MHz

Ic = -0.1mA, V_CE= 6V

R_G= 10kΩ, f = 100Hz

2.0

1.0

3.0

1.0

Noise Figure

CLASSIFICATION OF h_FE1

ꢀ

RANK

200-400

350-700

RANGE

120-240

UNISONIC TECHNOLOGIES CO., LTD

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MMBT1815

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Static Characteristics

DC Current Gain

100

VCE =6V

=300µA

=250µA

=200µA

=150µA

=100µA

=50µA

-1

Collector-Emitter Voltage( V)

Base-Emitter On Voltage

CollectorCurrent, Ic (mA)

Saturation Voltage

Ic=10*I

CE =6 V

(SAT)

VCE

-1

0. 2

0.4

0.6

0. 8

1.0

Base-EmitterVoltage (V)

CollectorCurrent,Ic (mA)

Current Gain-Bandwidth

Product

Collector Output

Capacitance

CE =6V

f=1MHz

IE=0

-1

CollectorCurrent, Ic (mA)

Collector-BaseVoltage(V)

UNISONIC TECHNOLOGIES CO., LTD

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MMBT1815

NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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