MMBT4401_10 [UTC]
NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
| 型号： | MMBT4401_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 文件： | 总6页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT4401
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
3
1
2
DESCRIPTION
The UTC MMBT4401 is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.
SOT-23
3
1
2
SOT-323
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
MMBT4401G-AL3-R SOT-323
Packing
Normal
Lead Free
MMBT4401L-AE3-R MMBT4401G-AE3-R
MMBT4401L-AL3-R
Halogen Free
1
E
E
2
B
B
3
C
C
MMBT4401-AE3-R
MMBT4401-AL3-R
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R206-035.F
MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) (Note)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25℃
60
40
V
6
V
600
mA
mW
mW/°C
°C
350
2.8
PD
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
°C
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Junction to Ambient
SYMBOL
RATING
357
UNIT
θJA
°C /W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=0.1mA, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=0.1mA, IC=0
60
40
6
V
V
V
ICEX
IBL
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
µA
µA
Base Cut-off Current
ON CHARACTERISTICS (note)
hFE1
hFE2
hFE3
hFE4
hFE5
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
20
40
DC Current Gain
80
100
40
300
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA
0.4
0.75
0.95
1.2
V
V
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
fT
VCE=10V, IC=20mA, f=100MHz 250
VCB=5V, IE=0, f=140kHz
MHz
pF
Ccb
Ceb
hie
hre
hfe
hoe
6.5
30
15
8
VBE=0.5V, IC=0, f=140kHz
pF
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
1
0.1
40
1
kΩ
×10-4
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
500
30 µmhos
SWITCHING CHARACTERISTICS
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, VEB=2V
IC=150mA IB1=15mA
Delay Time
tD
15
ns
Rise Time
Storage Time
Fall Time
tR
tS
tF
20
225
30
ns
ns
ns
VCC=30V, IC=150mA
IB1= IB2=15mA
Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-035.F
MMBT4401
NPN SILICON TRANSISTOR
TEST CIRCUIT
6V
-1.5V
1k
37Ω
Note:BVEBO=5V
30V
1KΩ
50Ω
0
≤220ns
Figure2. Saturated Turn-Off Switching Timer
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-035.F
MMBT4401
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation Voltage
vs Collector Current
0.4
0.3
0.2
500
VCE =5V
β=10
400
300
200
100
125 C
C
125
25
C
25 C
0.1
C
-40
C
-40
0
500
1
10
100
0.1 0.3
3
10 30
100 300
1
Collector Current, IC (mA)
Collector Current, IC (mA)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
20
VCB=40V
f=1MHz
10
16
12
Cte
1
Cob
8
4
0.1
25
50
75
100 125 150
0.1
1
10
100
Ambient Temperature, TA(℃)
Reverse Bias Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
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MMBT4401
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
400
400
IC
IB1=IB2=
10
IC
IB1=IB2=
10
320
240
160
80
320
240
160
80
VCC =25V
VCC =25V
tS
tR
tF
toff
tD
ton
0
0
10
100
Collector Current, IC (mA)
1000
10
100
Collector Current, IC (mA)
1000
UNISONIC TECHNOLOGIES CO., LTD
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MMBT4401
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
S.O.A
1400
1200
1000
800
600
400
200
100
80
1mS
1S
60
40
20
20
CE, Collector-Emitter Voltage (Volts)
30
40
50
0
10
V
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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