MMBT5401AL-AE3-R [UTC]
Transistor;
| 型号： | MMBT5401AL-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
MMBT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
ꢀ FEATURES
2
*Collector-Emitter Voltage: VCEO=-150V
*Collector Dissipation: Pc(max)=350mW
*High current gain
1
3
ꢀ MARKING
2L
SOT-23
*Pb-free plating product number:MMBT5401L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
Emitter
1
2
3
Base
Collector
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape Reel
Normal
Lead free
MMBT5401-AE3-R MMBT5401L-AE3-R SOT-23
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-011.C
MMBT5401
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
-150
V
-5
V
-600
mA
mW
℃
Power Dissipation
PD
350
Operating Temperature
Storage Temperature
TJ
+150
℃
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=-100µA, IE=0
IC=-1mA, IB=0
MIN
-160
-150
-6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
IE=-10µA, IC=0
VCB=-120V, IE=0
VBE=-3V, Ic=0
V
ICBO
-50
-50
nA
nA
Emitter Cut-off Current
IEBO
VCE=-5V, Ic=-1mA
80
80
80
DC Current Gain(note)
hFE
VCE=-5V, Ic=-10mA
CE=-5V, Ic=-50mA
400
V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
-0.2
-0.5
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-10V, Ic=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
400
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-011.C
MMBT5401
■ TYPICAL CHARACTERICS
PNP EPITAXIAL SILICON TRANSISTOR
Fig.2 DC current Gain
Fig.1 Collector output Capacitance
3
20
16
12
10
VCE=-5V
f=1MHz
=0
I
E
2
10
8
4
0
1
10
0
10
-1
-10
0
1
2
3
0
1
2
-10
-10
-10
-10
-10
-10
-10
Ic,Collector current (mA)
Fig.4 Saturation voltage
Collector-Base voltage(V)
Fig.3 Base-Emitter on Voltage
3
1
-10
-10
Ic=10*I
B
VCE=-5V
V
BE(sat)
2
0
-10
-10
-1
1
-10
-10
VCE(sat)
0
-2
-10
-10
-1
-10
0
1
2
3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-10
-10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Fig.5 Current gain -bandwidth
product
3
10
V
CE=-10V
2
10
1
10
0
10
-1
-10
0
1
2
3
-10
-10
-10
-10
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R206-011.C
MMBT5401
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R206-011.C
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