MMBT9012L-E-AE3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | MMBT9012L-E-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT9012
PNP SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
3
FEATURES
2
1
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
SOT-23
(JEDEC TO-236)
*Complementary to UTC MMBT9013
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen Free
MMBT9012G-x-AE3-R
C: Collector
1
2
3
MMBT9012L-x-AE3-R
B
E
C
Tape Reel
Note: Pin Assignment: B: Base E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-020.B
MMBT9012
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-40
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
-20
V
-5
V
-500
mA
mW
C
C
Collector dissipation
Junction Temperature
Storage Temperature
PC
225
TJ
+150
-55 ~ +150
TSTG
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC= -100μA, IE=0
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
-40
-20
-5
V
V
IC= -1mA, IB=0
IE= -100μA, IC=0
V
VCB= -25V, IE=0
-100
-100
300
nA
nA
Emitter cutoff current
IEBO
VEB= -3V, IC=0
hFE1
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC= -500mA, IB= -50mA
IC= -500mA, IB= -50mA
VCE=-1V, IC= -10mA
64
40
120
90
DC Current Gain
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
VCE(sat)
VBE(sat)
VBE(on)
-0.18 -0.6
-0.95 -1.2
V
V
V
-0.6 -0.67 -0.7
CLASSIFICATION OF hFE1
RANK
D
E
F
G
H
144-202
I
RANGE
64-91
78-112
96-135
112-166
190-300
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-020.B
www.unisonic.com.tw
MMBT9012
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
Static Characteristic
Dc Current Gain
1000
-50
-40
IB=-250μA
IB=-200μA
500
300
IB=-150μA
-30
-20
VCE=-1V
100
IB=-100μA
IB=-50μA
50
30
-10
0
10
0
-10
-20
-30
-40
-50
-500
-1000
1
-300
-30 -50
-100
Collector Current, IC (mA)
Collector - Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-020.B
www.unisonic.com.tw
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