MMBT9014LT1_15 [WINNERJOIN]
NPN EPITAXIAL SILICON TRANSISTOR;
| 型号： | MMBT9014LT1_15 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
M M B T 9 0 1 4 L T 1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
PRF-AMPLIFIER,LOW LEVEL&LOW NOISE
Complemen to MMPT9015LT1
1
Collector-current:Ic=100mA
2
Collector-Emiller Voltage:VCE=45V
High Totalpower Dissipation Pc=225mW
High life And Good Linearity
1.
1.BASE
2.EMITTER
2.4
1.3
3.COLLECTOR
Unit:mm
(Ta=25oC)
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Unit
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
V
V
V
CBO
CEO
EBO
V
V
50
45
V
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25oC*
Junction Temperature
Storage Temperature
5
mA
Ic
100
225
150
-55~150
P
T
T
D
mW
O C
O C
j
stg
(Ta=25oC)
Electrical Characteristics
Parameter
Symbol MIN. TYP.MAX. Unit
Condition
V
V
50
45
5
BVCBO
BVCEO
BVEBO
I
I
I
C
C
E
=100 A I
=1mA I =0
=100 A I =0
CB=50V, V =0
E
=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
B
V
C
I
I
CBO
50
50
nA
nA
V
V
V
C
EBO
CB=5V, I
CE=5V, I
C
=0
H
V
V
V
C
FE
1000
0.3
C
=1mA
60 300
CE(sat)
BE(sat)
BE(on)
ob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
V
I
I
C
=100mA, I
=100mA, I
B
=5mA
=5mA
1.00
6.7
V
V
C
B
0.63
2.2
V
V
V
V
C
e
=5V, I
C
=2mA
=10mA,f=100MHz
0.58
150
Output Capacitance
3.5
PF
MHz
dB
CB=10V, I
E
Current Gain-Bandwidth Product
f
T
270
CE=5V I
CE=5V I
C
C
=10mA
=0.2mA
Noise Figure
NF
10
WEJ ELECTRONIC CO.,LTD
f=1MHz Rs=2Kohm
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
MMBT9014LT1=L6
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS
M M B T 9 0 1 4 L T 1
Typical Characteristics
1000
100
10
100
VcE=5V
90
IB=160 A
IB=140 A
IB=120 A
IB=100 A
80
70
60
50
40
30
20
10
0
IB=80 A
IB=60 A
IB=40 A
IB=20 A
1
10
100
1000
0
10
20
30
40
50
VCE(V),COLLECTOR-EMMITTER VOLTAGE
IC(mA),COLLECTOR CURRENT
DC Current Gain
Static Characteristic
1000
100
10
1000
100
10
VcE=5V
VBE(sat)
VCE(sat)
IC=20 IB
1000
1
10
100
1
10
100
1000
IC(mA),COLLECTOR CURRENT
IC(mA),COLLECTOR CURRENT
Base-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
Current Gain Bandwidth Product
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
相关型号：
MMBT9015A
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
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