MMBTA14_10 [UTC]

DARLINGTON TRANSISTOR; 达林顿晶体管
MMBTA14_10
型号: MMBTA14_10
厂家: Unisonic Technologies    Unisonic Technologies
描述:

DARLINGTON TRANSISTOR
达林顿晶体管

晶体 晶体管 达林顿晶体管
文件: 总3页 (文件大小:74K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
MMBTA14  
NPN SILICON TRANSISTOR  
DARLINGTON TRANSISTOR  
„
DESCRIPTION  
3
The UTC MMBTA14 is a Darlington transistor.  
„
FEATURES  
1
2
* Collector-Emitter Voltage: VCES = 30V  
* Collector Dissipation: PC(MAX) = 350 mW  
SOT-23  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Normal  
Lead Free Plating  
Halogen Free  
1
2
3
MMBTA14-AE3-R MMBTA14L-AE3-R MMBTA14G-AE3-R  
E
B
C
Tape Reel  
„
MARKING  
1N  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
1 of 3  
Copyright © 2009 Unisonic Technologies Co., LTD  
QW-R206-038.B  
MMBTA14  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCES  
VEBO  
PC  
RATINGS  
30  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation (TC=25°C)  
Collector Current  
30  
V
10  
V
350  
mW  
mA  
°C  
°C  
IC  
500  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCES  
ICBO  
TEST CONDITIONS  
IC=100µA, IB=0  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector CutOff Current  
30  
20000  
125  
V
VCB=30V, IE=0  
100  
100  
nA  
nA  
Emitter CutOff Current  
IEBO  
VEB=10V, IC=0  
DC Current Gain  
hFE  
VCE=5V, IC=100 mA (Note)  
IC=100mA, IB=0.1mA (Note)  
VCE=5V, IC=100mA (Note)  
VCE=5V, IC=10mA, f=100MHz  
Collector-Emitter Saturation Voltage  
Base-Emitter on Voltage  
VCE(SAT)  
VBE(ON)  
fT  
1.5  
2.0  
V
V
Current Gain Bandwidth Product  
MHz  
Note: Pulse Width<300µs, Duty Cycle2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-038.B  
www.unisonic.com.tw  
MMBTA14  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-038.B  
www.unisonic.com.tw  

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