MMBTA56-AE3-R [UTC]
AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR; 放大晶体管PNP硅晶体管
| 型号： | MMBTA56-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTA56
PNP SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
ꢀ
FEATURES
3
* Collector-Emitter Voltage: VCEO=-80V
* Collector Dissipation: PD=350mW
1
2
SOT-23
*Pb-free plating product number: MMBTA56L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
SOT-23
Packing
Normal
Lead Free Plating
MMBTA56L-AE3-R
1
2
3
MMBTA56-AE3-R
E
B
C
Tape Reel
MMBTA56L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
2G
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-090,A
MMBTA56
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (TA=25
℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-4
V
Collector Current - Continuous
Total Device Dissipation(Note 1)
-500
mA
mW
350
2.8
PD
Derate Above 25
℃
mW/
℃
℃
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
℃
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
MAX
357
UNIT
/W
θJA
℃
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
BVCEO IC=-1.0mA, IB=0
BVEBO IE=-100 A, Ic=0
-80
-4
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
µ
ICES
ICBO
VCE=-60V, IB=0
VCB=-80V, IE=0
-0.1
-0.1
µ
µ
A
A
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
100
100
hFE
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
VCE(SAT) IC=-100mA, IB=-10mA
VBE(ON) IC=-100mA, VCE=-1V
-0.25
-1.2
V
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note2)
IC=-10mA, VCE=-2V,
f=100MHz
fT
100
MHz
Note 1: Pulse test: PW≤300µs, Duty Cycle≤2%
2: fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
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MMBTA56
PNP SILICON TRANSISTOR
ꢀ
SWITCHING TIME TEST CIRCUITS
TURN-ON TIME
-1.0V VCC
+40V
TURN-OFF TIME
+VBB
VCC
+40V
RL
RL
100
100
OUTPUT
OUTPUT
VIN
5.0µF
VIN
5.0µF
RB
RB
5.0µs
CS＜6.0pF
CS＜6.0pF
5.0µs
tr=3.0ns
100
100
+10V
0
tr=3.0ns
UNISONIC TECHNOLOGIES CO., LTD
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MMBTA56
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Current-Gain Bandwidth Product
200
Capacitance
100
70
TJ=25℃
50
VCE=-2.0V
100
70
C
ibo
TJ=25℃
30
20
50
Cobo
10
30
20
7.0
5.0
-2.0-3.0-5.0-7.0-10-20-30 -50-70-100-200
Collector Current, IC(mA)
-0.1-0.2 -0.5-10-20 -5.0-10 -20 -50-100
Reverse Voltage, VR (V)
Active-Region Safe Operating Area
Switching Time
1
-1.0K
-700
1.0K
0
0
1.0ms
µ
s
700
500
-500
ts
TC=25℃
-300
-200
300
200
1.0s
tf
TA=25℃
100
70
50
-100
-70
-50
MMBTA55
VCC=-40V
IC/IB=10
IB1=IB2
MMBTA56
-30
-20
30
20
tr
Current Limit
Thermal Limit
Second Breakdown Limit
TJ=25℃ td@VBE(off)=-0.5V
-10
10
-5.0-7.0-10-20 -30-50-70-100-200-300-500
Collector Current, IC (mA)
-1.0 -2.0-3.0-5.0-7.0-10-20-30 -50-70-100
Collector-Emitter Voltage, VCE (V)
DC Current Gain
“ON” Voltages
400
-1.0
TJ=125℃
TJ=125℃
VCE=-1.0V
VBE(SAT )@IC/IB=10
-0.8
-0.6
-0.4
200
25℃
VBE(ON)@VCE=-1.0V
-55℃
100
80
VCE(SAT)@IC/IB=10
60
-0.2
0
40
-0.5-1.0-2.0 -5.0-10 -20 -50-100-200-500
Collector Curren,t IC (mA)
-0.5 -1.0-2.0-5.0-10-20 -50 -100-200-500
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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MMBTA56
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Base-Emitter Temperature
Coefficient
Collector Saturation Region
-1.0
-0.8
-0.8
-1.2
IC=-
TJ=125℃
250mA
IC=-50
mA
IC=-500
mA
-0.6
-0.4
-1.6
-2.0
R
θVB for VBE
IC=
-100mA
-0.2
0
-2.4
-2.8
IC=-10mA
-0.05 -0.1-0.2-0.5-1.0-2.0-5.0-10 -20 -50
Base Current, IB (mA)
-0.5-1.0-2.0-5.0-10-20 -50-100-200-500
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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