MMBTA56G-AE3-R [UTC]

AMPLIFIER TRANSISTOR; 晶体管放大器


型号：	MMBTA56G-AE3-R
厂家：	Unisonic Technologies
描述：	AMPLIFIER TRANSISTOR 晶体管放大器晶体放大器小信号双极晶体管光电二极管
文件：	总5页 (文件大小：222K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MMBTA56

PNP SILICON TRANSISTOR

AMPLIFIER TRANSISTOR

FEATURES

* Collector-Emitter Voltage: V_CEO=-80V

* Collector Dissipation: P_D=350mW

SOT-23

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

MMBTA56L-AE3-R

Halogen Free

MMBTA56G-AE3-R

Tape Reel

MARKING

www.unisonic.com.tw

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MMBTA56

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_A=25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-80

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

-80

Emitter-Base Voltage

-4

Collector Current - Continuous

Total Device Dissipation(Note 1)

Derate Above 25℃

-500

mW/℃

℃

350

2.8

P_D

Junction Temperature

T_J

+150

-55 ~ +150

Storage Temperature

T_STG

℃

Note 1. Device mounted on FR-4=1.6×1.6×0.06 in

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Thermal Resistance, Junction to Ambient

SYMBOL

MAX

357

UNIT

θ_JA

℃/W

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

BV_CEOI_C=-1.0mA, I_B=0

-80

-4

Emitter-Base Breakdown Voltage

Collector Cutoff Current

ON CHARACTERISTICS

BV_EBOI_E=-100μA, Ic=0

I_CES

I_CBO

V_CE=-60V, I_B=0

V_CB=-80V, I_E=0

-0.1

μA

I_C=-10mA, V_CE=-1V

I_C=-100mA, V_CE=-1V

100

h_FE

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

V_CE(SAT)I_C=-100mA, I_B=-10mA

V_BE(ON)I_C=-100mA, V_CE=-1V

-0.25

-1.2

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note2)

I_C=-10mA, V_CE=-2V,

f=100MHz

f_T

100

MHz

Note 1: Pulse test: PW≤300μs, Duty Cycle≤2%

2: f_Tis defined as the frequency at which IhfeI extrapolates to unity.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R206-090,B

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MMBTA56

PNP SILICON TRANSISTOR

SWITCHING TIME TEST CIRCUITS

UNISONIC TECHNOLOGIES CO., LTD

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MMBTA56

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Active-Region Safe Operating Area

Switching Time

t_s

-1.0K

-700

1.0K

700

500

1.0ms

-500

T_C=25℃

-300

-200

300

200

1.0s

t_f

T_A=25℃

100

-100

-70

-50

MMBTA55

V_CC=-40V

I_C/I_B=10

I_B1=I_B2

MMBTA56

-30

-20

Current Limit

Thermal Limit

Second Breakdown Limit

t_r

T_J=25℃

t_d@V_BE(off)=-0.5V

-10

-5.0-7.0

-20 -30-50-70-100-200-300-500

Collector Current, I_C(mA)

-10

-1.0 -2.0-3.0-5.0-7.0-10-20-30 -50-70-100

Collector-Emitter Voltage, V_CE(V)

UNISONIC TECHNOLOGIES CO., LTD

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MMBTA56

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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