MMBTA94_10 [UTC]

HIGH VOLTAGE TRANSISTOR; 高压晶体管
MMBTA94_10
型号: MMBTA94_10
厂家: Unisonic Technologies    Unisonic Technologies
描述:

HIGH VOLTAGE TRANSISTOR
高压晶体管

晶体 晶体管 高压
文件: 总3页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
MMBTA94  
PNP SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
„
FEATURES  
* Collector-Emitter Voltage: VCEO=-400V  
* Collector Dissipation: PC(MAX)=350mW  
* Low Collector-Emitter Saturation Voltage  
APPLICATIONS  
„
* Telephone Switching  
* High Voltage Switch  
Lead-free:  
MMBTA94L  
Halogen-free: MMBTA94G  
„
ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
SOT-23  
Packing  
Normal  
Halogen Free  
1
2
3
MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R  
E
B
C
Tape Reel  
„
MARKING  
4D  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
1 of 3  
Copyright © 2010 Unisonic Technologies Co., Ltd  
QW-R206-008,E  
MMBTA94  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-400  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-400  
V
-6  
V
-300  
mA  
mW  
°С  
°С  
Collector Dissipation (Ta=25°C)  
Junction Temperature  
Storage Temperature  
PC  
350  
TJ  
+150  
-40~+150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO IC =-100µA,IE=0  
BVCEO IC =-1mA,IB=0  
BVCES IC =-100µA,VBE=0  
BVEBO IE=-100µA,Ic=0  
-400  
-400  
-400  
-5  
V
V
V
V
ICBO  
ICES  
IEBO  
VCB=-300V,IE=0  
-100 nA  
Collector Cut-off Current  
VCB=-400V,VBE=0  
VEB=-4V,IC=0  
-1  
µA  
nA  
Emitter Cut-off Current  
100  
VCE=-10V,IC=-1mA  
VCE=-10V,IC=-10mA  
VCE=-10V,IC=-50mA  
60  
70  
70  
40  
300  
DC Current Gain (Note)  
hFE  
VCE=-10V,IC=-100mA  
IC=-10mA,IB=-1mA  
IC=-50mA,IB=-5mA  
-0.20  
-0.5  
-0.75  
7
V
V
Collector-Emitter Saturation Voltage  
VCE(SAT)  
Base-Emitter Saturation Voltage  
Output Capacitance  
VBE(SAT) IC=-10mA,IB=-1mA  
Cob VCB=-20V,IE=0, f=1MHz  
V
pF  
Note: Pulse test: PW<300µs, Duty Cycle<2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-008,E  
www.unisonic.com.tw  
MMBTA94  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
„
Base-Emitter Saturation Voltage  
IC=10×IB  
DC Current Gain  
-10  
1000  
100  
VCE=-10V  
-1.0  
10  
1
-0.1  
-0.01  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
Collector Current, IC(mA)  
Collector Current, IC(mA)  
Collector-Emitter Saturation Voltage  
IC=10×IB  
Collector Output capacitance  
-10  
1000  
100  
IE=0  
f=1MHz  
-1.0  
-0.1  
10  
1
-0.01  
-1  
-10  
-100  
-0.1  
-1  
-10  
-100  
Collector Current, IC(mA)  
Collector Base Voltage (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-008,E  
www.unisonic.com.tw  

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