MMBTA94_10 [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | MMBTA94_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTA94
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter Voltage: VCEO=-400V
* Collector Dissipation: PC(MAX)=350mW
* Low Collector-Emitter Saturation Voltage
APPLICATIONS
* Telephone Switching
* High Voltage Switch
Lead-free:
MMBTA94L
Halogen-free: MMBTA94G
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
SOT-23
Packing
Normal
Halogen Free
1
2
3
MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G-AE3-R
E
B
C
Tape Reel
MARKING
4D
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
1 of 3
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R206-008,E
MMBTA94
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-400
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-400
V
-6
V
-300
mA
mW
°С
°С
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
PC
350
TJ
+150
-40~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC =-100µA,IE=0
BVCEO IC =-1mA,IB=0
BVCES IC =-100µA,VBE=0
BVEBO IE=-100µA,Ic=0
-400
-400
-400
-5
V
V
V
V
ICBO
ICES
IEBO
VCB=-300V,IE=0
-100 nA
Collector Cut-off Current
VCB=-400V,VBE=0
VEB=-4V,IC=0
-1
µA
nA
Emitter Cut-off Current
100
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-50mA
60
70
70
40
300
DC Current Gain (Note)
hFE
VCE=-10V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
-0.20
-0.5
-0.75
7
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Output Capacitance
VBE(SAT) IC=-10mA,IB=-1mA
Cob VCB=-20V,IE=0, f=1MHz
V
pF
Note: Pulse test: PW<300µs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-008,E
www.unisonic.com.tw
MMBTA94
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
IC=10×IB
DC Current Gain
-10
1000
100
VCE=-10V
-1.0
10
1
-0.1
-0.01
-1
-10
-100
-1000
-1
-10
-100
-1000
Collector Current, IC(mA)
Collector Current, IC(mA)
Collector-Emitter Saturation Voltage
IC=10×IB
Collector Output capacitance
-10
1000
100
IE=0
f=1MHz
-1.0
-0.1
10
1
-0.01
-1
-10
-100
-0.1
-1
-10
-100
Collector Current, IC(mA)
Collector Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-008,E
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明