MMBTH10L-X-AE3-R [UTC]
RF TRANSISTOR; RF晶体管型号: | MMBTH10L-X-AE3-R |
厂家: | Unisonic Technologies |
描述: | RF TRANSISTOR |
文件: | 总5页 (文件大小:229K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
NPN SILICON TRANSISTOR
RF TRANSISTOR
DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23
MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R SOT-323
MMBTH10-x-AN3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R SOT-523
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R206-003.F
MMBTH10
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
25
VCEO
V
VEBO
3
V
SOT-23
225
200
50
mW
mW
mA
Power Dissipation
PC
SOT-323/SOT-523
Collector current
IC
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
SYMBOL
BVCBO IC=100µA
TEST CONDITIONS
MIN
30
25
3
TYP
MAX
UNIT
V
V
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO IE=10µA
V
VCE(SAT) IC=4mA, IB=400µA
VBE(ON) VCE=10V, IC=4mA
500
950
100
100
mV
mV
nA
nA
ICBO
IEBO
hFE
Cob
fT
VCB=25V
VEB=2V
DC Current Gain
VCE=10V, IC=4mA
VCB=10V, f=1MHZ
VCE=10V, IC=4mA, f=100MHz
60
Output Capacitance
0.7
pF
Current Gain Bandwidth Product
650
MHz
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-100
90-130
120-200
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R206-003.F
www.unisonic.com.tw
MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R206-003.F
www.unisonic.com.tw
MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Input Admittance
Output Admittance
120
12
10
8
VCE=10V
IC=5mA
VCE=10V
IC=5mA
80
40
0
gib
6
bob
-40
-80
4
bib
gob
2
0
-120
1000
0
200
500
1000
100
200
500
Frequency, f (MHz)
Frequency, f (MHz)
Forward Transfer Admittance
VCE=10V
Reverse Transfer Admittan
120
8
VCE=10V
IC=5mA
bfb
IC=5mA
80
40
0
6
4
gfb
-brb
-40
-80
2
0
-grb
500
-120
1000
1000
0
200
500
0
200
Frequency, f (MHz)
Input Admittance
Frequency, f (MHz)
Output Admittance
24
6
VCE=10V
Ic=2mA
VCE=10V
Ic=2mA
20
16
5
4
gie
bie
boe
12
8
3
2
1
0
4
goe
0
1000
1000
0
200
500
0
200
500
Frequency, f (MHz)
Frequency, f (MHz)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-003.F
www.unisonic.com.tw
MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R206-003.F
www.unisonic.com.tw
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