MMDT5551_15 [UTC]

HIGH VOLTAGE SWITCHING TRANSISTOR;


型号：	MMDT5551_15
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE SWITCHING TRANSISTOR 高压开关
文件：	总3页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MMDT5551

Preliminary

DUAL TRANSISTOR

HIGH VOLTAGE SWITCHING

TRANSISTOR

DESCRIPTION

The UTC MMDT5551 is a high voltage fast-switching dual

NPN transistor. It is characterized with high breakdown voltage,

high current gain and high switching speed.

FEATURES

* High Collector-Emitter Voltage: V_CEO=160V

* High current gain

EQUIVALENT CIRCUIT

ORDERING INFORMATION

Ordering Number

Package

SOT-363

Packing

Lead Free

Halogen Free

MMDT5551G-AL6-R

MMDT5551L-AL6-R

E1 B1 C2 E2 B2 C1 Tape Reel

MARKING

www.unisonic.com.tw

1 of 3

QW-R218-022.b

MMDT5551

Preliminary

DUAL TRANSISTOR

ABSOLUATE MAXIUM RATINGS (T_A= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

180

UNIT

Collector -Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector -Emitter Voltage

Emitter -Base Voltage

DC Collector Current

Power Dissipation

160

600

°C

P_D

200

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

T_STG

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

TEST CONDITIONS

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=10μA, I_C=0

V_CB=120V, I_E=0

V_BE=4V, I_C=0

MIN

180

160

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_CBO

Emitter Cut-off Current

I_EBO

_CE=5V, I_C=1mA

DC Current Gain(note)

h_FE

V_CE=5V, I_C=10mA

160

400

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

0.15

0.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

V_BE(SAT)

I_C=50mA, I_B=5mA

Current Gain Bandwidth Product

Output Capacitance

f_T

V_CE=10V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

I_C=0.25mA, V_CE=5V

R_S=1kΩ, f=10Hz ~ 15.7kHz

100

300

6.0

MHz

C_ob

Noise Figure

Note: Pulse test: PW<300μs, Duty Cycle<2%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R218-022.b

www.unisonic.com.tw

MMDT5551

Preliminary

DUAL TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R218-022.b

www.unisonic.com.tw

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