MPSA06G-T92-B [UTC]
NPN TRANSISTOR; NPN晶体管型号: | MPSA06G-T92-B |
厂家: | Unisonic Technologies |
描述: | NPN TRANSISTOR |
文件: | 总4页 (文件大小:245K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA06
NPN SILICON TRANSISTOR
NPN TRANSISTOR
FEATURES
* Collector-emitter voltage: VCEO=80V
* Collector dissipation: PD=625mW
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
MPSA06G-T92-B
MPSA06G-T92-K
1
E
E
2
B
B
3
C
C
MPSA06L-T92-B
MPSA06L-T92-K
TO-92
TO-92
Tape Box
Bulk
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., LTD
QW-R201-035.C
MPSA06
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
80
80
Collector-Emitter Voltage
Emitter-Base Voltage
V
4
V
Collector Current - Continuous
Total device Dissipation, @TA=25°С
Derate above 25°С
500
mA
625
5
mW
mW/°С
mW
mW/°С
°С
PD
PD
Total device Dissipation, @TC=25°С
Derate above 25°С
1500
12
Junction Temperature
TJ
+125
-55 ~ +150
Storage Temperature
TSTG
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
200
UNIT
Junction-to-Ambient
Junction-to-Case
°С/W
θJC
83.3
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
BVCEO
IC=1.0mA, IB=0
80
4
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
BVEBO
ICEO
IE=100μA, Ic=0
VCE=60V, IB=0
VCB=80V, IE=0
V
0.1
0.1
μA
μA
ICBO
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
100
100
Dc Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(ON)
0.25
1.2
V
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(Note 2)
fT
IC=10mA, VCE=2V, f=100MHz
100
MHz
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R201-035.C
MPSA06
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Capacitance
80
60
TJ=25°С
40
Cibo
20
10
8.0
Cobo
6.0
4.0
0.1
0.5 1.0
5.0
10
50 100
Reverse Voltage, VR (Volts)
Active-Region Safe Operating Area
1.0k
700
100µs
500
300
200
1.0s
TC=25°С
TA=25°С
100
70
50
Current Limit
Thermal Limit
Second Breakdown
Limit
30
20
10
1.0 2.0
5.0 10
50 100
Collector-Emitter Voltage, VCE (Volts)
“On” Voltages
1.0
TJ=25°С
VBE(SAT) @ IC/IB=10
0.8
0.6
VBE(ON) @ VCE=1.0V
0.4
0.2
0
VCE(ON) @ IC/IB=10
0.5 1.0
10
5.0
50 100
500
Collector Current, IC (mA)
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MPSA06
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Saturation Region
TJ=25°С
Base-Emitter Temperature Coefficient
1.0
0.8
0.6
-0.8
-1.2
-1.6
IC=250mA
IC=100mA
IC=50mA
IC=500mA
RθVB for VBE
0.4
0.2
0
-2.0
-2.4
-2.8
IC=10mA
0.5 1.0
10
0.5 1.0
10
5.0
50 100
500
5.0
50 100
500
Collector Current, IC (mA)
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R201-035.C
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