MPSA13G-T92-A-B [UTC]
Small Signal Bipolar Transistor;
| 型号： | MPSA13G-T92-A-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor 晶体管 |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA13
NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MPSA13 is a Darlington transistor.
FEATURES
* Collector-Emitter Voltage: VCES = 30V
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Lead Free
-
Halogen Free
1
E
B
E
E
E
E
2
C
C
B
B
C
C
3
B
E
C
C
B
B
MPSA13G-AB3-A-R
MPSA13G-AB3-F-R
MPSA13G-T92-B
MPSA13G-T92-K
MPSA13G-T92-A-B
MPSA13G-T92-A-K
SOT-89
SOT-89
TO-92
TO-92
TO-92
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
-
MPSA13L-T92-B
MPSA13L-T92-K
MPSA13L-T92-A-B
MPSA13L-T92-A-K
Tape Box
Bulk
Note: Pin assignment: E: Emitter
C: Collector
B: Base
MPSA13L-T92-A-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Green Package
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) refer to Pin Assignment
(3) AB3: SOT-89, T92: TO-92
(4) L: Lead Free, G: Halogen Free
MARKING
SOT-89
Pin Code
Date Code
TO-92
MPSA13G
1
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Copyright © 2015 UnisoniC Technologies Co., Ltd.
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QW-R208-001.G
MPSA13
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCES
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
30
V
10
V
500
mA
mW
°C
°C
Collector Dissipation
Junction Temperature
Storage Temperature
PC
625
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device Could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCES
ICBO
TEST CONDITIONS
IC=100μA, IB=0
MIN
30
TYP
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
VCB=30V, IE=0
100
100
nA
Emitter Cut-Off Current
IEBO
VEB=10V, IC=0
nA
DC Current Gain
hFE
VCE=5V, IC=100mA
10000
125
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
VCE(SAT) IC=100mA, IB=0.1mA
VBE(ON) VCE=5V, IC=100mA
1.5
2.0
V
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=10mA, f=100MHz
MHz
Note: Pulse test: Pulse Width ≤ 300μs, Duty Cycle=2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-001.G
www.unisoniC.Com.tw
MPSA13
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-001.G
www.unisoniC.Com.tw
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