MPSA194G-T92-A-K [UTC]

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型号：	MPSA194G-T92-A-K
厂家：	Unisonic Technologies
描述：	暂无描述晶体小信号双极晶体管开关
文件：	总4页 (文件大小：146K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MPSA194

PNP SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

The UTC MPSA194 is designed for high voltage low power

switching applications especially for use in telephone and

telecommunication circuits.

FEATURES

* Collector-Emitter Voltage: V_CEO=400V

* Power Dissipation: 1.0W

APPLICATIONS

* Telephone Circuit

Lead-free:

Halogen-free:MPSA194G

MPSA194L

* Telecommunication Circuit

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

MPSA194L-T92-B

MPSA194L-T92-K

Halogen Free

MPSA194-T92-B

MPSA194-T92-K

MPSA194G-T92-B

MPSA194G-T92-K

TO-92

Tape Box

Bulk

www.unisonic.com.tw

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QW-R201-026.C

MPSA194

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

-400

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

-400

-6

-800

Collector Dissipation (Ta=25°C)

Junction Temperature

Storage Temperature

P_C

1.0

T_J

150

°C

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collect Cut-off Current

BV_CBOI_C=-100µA, I_E=0A

BV_CEOI_C=-1mA, I_B=0A

-400

I_CBO

I_CEO

I_EBO

V_CB=-400 V, I_E=0A

V_CB=-200 V, V_BE=0V

V_EB= -6 V, I_C=0A

-10

-1

µA

Collect Cut-off Current

Emitter Cut-off Current

-0.2

V_CE=-10 V ,I_C=-1mA

V_CE=-10 V ,I_C=-20mA

DC Current Gain

h_FE

800

V_CE=-10 V ,I_C=-80mA

Base-Emitter Saturation Voltage

V_BE(SAT)I_C=-20mA, I_B=- 2mA

-0.9

-0.2

-1.2

I_C=-20mA, I_B=- 4mA

V_CE(SAT)

Collector-Emitter Saturation Voltage

I_C=-80mA, I_B=- 2mA

Output Capacitance

C_OB

f_T

V_CB=-20 V, I_E=0A, f =1MHz

V_CE=-20V, I_E=-10A, f =1MHz

MH_Z

Current Gain Bandwidth Product

UNISONIC TECHNOLOGIES CO., LTD

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MPSA194

PNP SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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MPSA194

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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