MPSA44B [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | MPSA44B |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC MPSA 44B
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage: VCEO=400V
*Collector current up to 300mA
*Complement to MPSA94
*Collector Dissipation: Pc(max)=625mW
1
TO-92
1: BASE 2: EMITTER 3: COLLECTOR
*Pb-free plating product number: MPSA44BL
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATINGS
500
UNIT
V
V
V
mW
W
Collector-emitter voltage
Emitter-base voltage
400
6
625
1.5
℃
Collector dissipation(Ta=25 )
℃
Collector dissipation(Tc=25 )
Pc
Collector current
Junction Temperature
Storage Temperature
Ic
Tj
Tstg
300
150
-55 ~ +150
mA
℃
℃
ELECTRICAL CHARACTERISTICS
℃
(Tj=25 ,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
500
400
6
TYP
MAX
UNIT
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
BVCBO Ic=100µA, IB=0
BVCEO Ic=1mA, IB=0
BVEBO IE=100µA, Ic=0
ICBO
ICES
IEBO
V
VCB=400V,IE=0
VCE=400V,IB=0
VEB=4V,Ic=0
0.1
0.5
0.1
µA
µA
µA
VCE=10V, Ic=1mA
40
50
45
40
VCE=10V, Ic=10mA
VCE=10V, Ic=50mA
VCE=10V, Ic=100mA
240
DC current gain(note)
hFE
Ic=1mA, IB=0.1mA
0.4
0.5
0.75
0.75
Collector-emitter saturation voltage
VCE(sat) Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
VBE(sat) Ic=10mA, IB=1mA
fT
V
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
V
MHz
pF
VCE=20V, Ic=10mA, f=100MHz
50
Cob
VCB=20V, IE=0, f=1MHz
7
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
QW-R201-079,B
UTC MPSA 44B
NPN EPITAXIAL SILICON TRANSISTOR
Note: Pulse test:PW<300µs,Duty Cycle<2%
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
Fig.2 Turn-on switching times
Fig.3 Turn-off switching times
1
2
10
10
VCE=150V
Ic/IB=10
VCE=150V
Ic/IB=10
140
120
Ta=25℃
Ta=25℃
VBE(OFF)=4V
100
1
VCE=10V
10
80
Ts
0
10
60
40
20
0
0
10
Tf
Tf
-20
-40
Td
-1
-1
10
10
0
1
2
3
4
0
1
2
0
1
2
10
10
10
10
10
10
10
10
10
10
10
Collector current, Ic (mA)
Collector current, Ic (mA)
Collector current, Ic (mA)
Fig.4 Capacitance
Fig.5 ON Voltage
Fig.6 Collector saturation region
3
1.0
0.8
0.5
0.4
10
Ta=25℃
Ic=1mA
VBE(sat),Ic/IB=10
Ic=10mA
2
Cib
10
Ic=50mA
0.6
0.3
0.2
VBE(ON),VCE=10V
0.4
0.2
0
1
10
Cob
VCE(sat),Ic/IB=10
0.1
Ta=25℃
0
0
10
-1
0
1
2
3
-1
10
0
1
2
3
1
2
3
4
5
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Collector voltage(V)
Collector current,Ic (mA)
base current, Ib (µA)
Fig.7 High Frequency
current gain
Fig.8 Safe operating area
2
4
10
10
VCE=10V
Valid Duty
f=10MHz
Cycle<10%
Ta=25℃
1ms
1s
3
10
1
0.1ms
10
2
10
0
10
1
10
MPSA44B
-1
10
0
10
-1
10
0
1
2
3
0
10
1
2
3
4
10
10
10
10
10
10
10
10
Collector current, Ic (mA)
Collector voltage (V)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
QW-R201-079,B
UTC MPSA 44B
NPN EPITAXIAL SILICON TRANSISTOR
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
QW-R201-079,B
UTC MPSA 44B
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
QW-R201-079,B
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