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PN2222AL-T92-K [UTC]

NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
PN2222AL-T92-K
型号： PN2222AL-T92-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

NPN GENERAL PURPOSE AMPLIFIER
NPN通用放大器

晶体 放大器 晶体管 功率双极晶体管
文件： 总6页 (文件大小：69K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
PN2222A  
NPN SILICON TRANSISTOR  
NPN GENERAL PURPOSE  
AMPLIFIER  
1
ꢀ
FEATURES  
SOT-89  
* This device is for use as a medium power amplifier and switch  
requiring collector currents up to 500mA.  
1
TO-92  
*Pb-free plating product number: PN2222AL  
ꢀ
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
PN2222AL-AB3-R  
PN2222AL-AB3-T  
PN2222AL-T92-B  
PN2222AL-T92-K  
1
B
B
E
E
2
C
C
B
B
3
E
E
C
C
PN2222A-AB3-R  
PN2222A-AB3-T  
PN2222A-T92-B  
PN2222A-T92-K  
SOT-89  
SOT-89  
TO-92  
Tape Reel  
Tube  
Tape Box  
Bulk  
TO-92  
PN2222AL-AB3-R  
(1)Packing Type  
(2)Package Type  
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube  
(2) AB3: SOT-89, T92: TO-92  
(3)Lead Plating  
(3) L: Lead Free Plating, Blank: Pb/Sn  
16www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R208-022,B  
PN2222A  
NPN SILICON TRANSISTOR  
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
75  
40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
6
V
0.6  
A
SOT-89  
TO-92  
1.2  
W
Total Device Dissipation  
PC  
625  
mW  
℃
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty  
cycle operations.  
ꢀ
THERMAL DATA (Ta=25℃, unless otherwise noted)  
PARAMETER  
SOT-89  
SYMBOL  
RATINGS  
104  
UNIT  
℃/W  
℃/W  
Thermal resistance, junction to Ambient  
θJA  
TO-92  
200  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO IC=10µA, IE=0  
BVCEO IC=10mA, IB=0  
BVEBO IE=10µA, IC=0  
75  
40  
6
V
V
V
ICEO  
ICBO  
IEBO  
IBL  
VCE=60V, VEB(OFF)=3.0V  
CB=60V, IE=0  
VCB=60V,IE=0, Ta=150℃  
10  
0.01  
10  
nA  
µA  
µA  
nA  
nA  
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
Base Cut-Off Current  
ON CHARACTERISTICS  
VEB=3.0V, IC=0  
10  
VCE=60V, VEB(OFF)=3.0V  
20  
IC=0.1mA, VCE=10V  
IC=1.0mA, VCE=10V  
IC=10mA, VCE=10V  
35  
50  
75  
IC=10mA, VCE=10V, Ta=-55℃  
IC=150mA, VCE=10V*  
IC=150mA, VCE=1.0V*  
IC=500mA, VCE=10V*  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
IC=150mA, IB=15mA  
IC=500mA, IB=50mA  
DC Current Gain  
hFE  
35  
100  
50  
300  
40  
0.3  
1.0  
1.2  
2.0  
V
V
V
V
Collector-Emitter Saturation Voltage*  
Base-Emitter Saturation Voltage*  
VCE(SAT)  
VBE(SAT)  
0.6  
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
fT  
IC=20mA, VCE=20V, f=100MHz  
300  
MHz  
pF  
Output Capacitance  
Cobo VCB=10V, IE=0, f=100kHz  
Cibo VEB=0.5V, IC=0, f=100kHz  
rb'Cc IC=20mA, VCB=20V, f=31.8MHz  
8.0  
25  
Input Capacitance  
pF  
Collector Base Time Constant  
150  
pS  
IC=100µA, VCE=10V, RS=1.0kΩ,  
f=1.0kHz  
Noise Figure  
NF  
4.0  
60  
dB  
Real Part of Common-Emitter High  
Frequency Input Impedance  
Re(hje) IC=20mA, VCB=20V, f=300MHz  
Ω
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R208-022,B  
www.unisonic.com.tw  
PN2222A  
NPN SILICON TRANSISTOR  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
SWITCHING CHARACTERISTICS  
Delay time  
Rise time  
Storage time  
Fall time  
tD  
tR  
tS  
tF  
VCC=30V, VBE(OFF)=0.5V,  
IC=150mA, IB1=15mA  
VCC=30V, IC=150mA,  
IB1= IB2=15mA  
10  
25  
ns  
ns  
ns  
ns  
225  
60  
Note 1. *Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R208-022,B  
www.unisonic.com.tw  
PN2222A  
NPN SILICON TRANSISTOR  
ꢀ
TEST CIRCUIT  
30V  
200Ω  
-15V  
6.0V  
1k  
37Ω  
16V  
30V  
1.0KΩ  
1.0KΩ  
0
0
≤220ns  
≤220ns  
50Ω  
500Ω  
Fig 1. Saturated Turn-On Switching Time  
Fig 2. Saturated Turn-Off Switching Time  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R208-022,B  
www.unisonic.com.tw  
PN2222A  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS  
DC Current Gain  
vs. Collector Current  
Collector-Emitter Saturation Voltage  
vs. Collector Current  
500  
0.4  
0.3  
0.2  
0.1  
VCE =5V  
β=10  
400  
300  
125℃  
25℃  
125℃  
25℃  
200  
100  
0
-40℃  
-40℃  
0.1 0.3  
3
10 30  
1
100 300  
500  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Base-Emitter Saturation Voltage  
vs. Collector Current  
Base-Emitter On Voltage  
vs. Collector Current  
1
0.8  
0.6  
β=10  
VCE =5V  
1
-40℃  
25℃  
-40℃  
0.8  
0.6  
25℃  
125℃  
125℃  
0.4  
0.2  
0.4  
1
500  
10  
100  
25  
0.1  
1
10  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Emitter Transition and Output  
Capacitance vs. Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
500  
20  
f=1MHz  
)
100  
10  
A
n
(
VCB=40V  
O
16  
12  
B
C
I
,
t
n
C
te  
e
r
r
u
1
C
r
Cob  
8
4
o
t
c
e
0.1  
l
l
o
C
25  
50  
75  
100 125 150  
0.1  
1
10  
100  
Ambient Temperature, TA(℃)  
Reverse Bias Voltage(V)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R208-022,B  
www.unisonic.com.tw  
PN2222A  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS(Cont.)  
Switching Times  
vs. Collector Current  
Turn On and Turn Off Times  
vs. Collector Current  
400  
400  
320  
240  
160  
IC  
10  
IC  
IB1=IB2=  
IB1=IB2=  
10  
320  
240  
VCC=25V  
VCC =25V  
tS  
160  
tR  
tF  
80  
0
tOFF  
80  
0
tD  
tON  
10  
100  
Collector Current, IC (mA)  
1000  
10  
100  
1000  
Collector Current, IC(mA)  
Power Dissipation vs.  
Ambient Temperature  
1.25  
SOT-89  
1
0.75  
0.5  
0.25  
0
TO-92  
25  
75 100 125 150  
50  
Temperature (℃)  
0
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R208-022,B  
www.unisonic.com.tw  

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