PUMZ1G-AL6-R [UTC]
NPN/PNP GENERAL PURPOSE TRANSISTORS; NPN / PNP通用晶体管
| 型号： | PUMZ1G-AL6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN/PNP GENERAL PURPOSE TRANSISTORS |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
NPN/PNP GENERAL PURPOSE
TRANSISTORS
DESCRIPTION
The UTC PUMZ1 is a NPN/PNP transistor, specially used in
general purpose of switching and amplifying applications. Thus, two
NPN/PNP transistors are operated independently in an SOT-363
package.
FEATURES
* Low Current: 100mA (MAX.)
* Low Voltage: 40V (MAX.)
* Less Number of Components And Boardspace Required
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
PUMZ1G-AL6-R
Package
SOT-363
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R218-011.a
PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
PIN CONFIGURATION
PIN DESCRIPTION
PIN NO.
1,4
PIN NAME
Emitter
DESCRIPTION
TR2; TR1
TR2; TR1
TR2; TR1
2,5
3,6
Base
Collector
UNISONIC TECHNOLOGIES CO., LTD
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QW-R218-011.a
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PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Per Transistor; For The PNP Transistor With Negative Polarity
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
VCBO
VCEO
VEBO
IC
50
40
V
V
5
V
100
mA
mA
mA
mW
mW
°C
ICM
200
IBM
200
TA ≤ 25°C
200
Total Power Dissipation
PD
TA ≤ 25°C (Note2)
300
Junction Temperature
Storage Temperature
TJ
150
TSTG
TOPR
-65 ~ +150
-65 ~ +150
°C
Ambient Operating Temperature
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on an FR4 printed-circuit board.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
416
UNIT
K/W
Junction to Ambient
θJA
Note: Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
Per Transistor; For The PNP Transistor With Negative Polarity
MIN TYP MAX UNIT
VCB =30V, IE =0
100
10
nA
μA
nA
Collect Cut-off Current
ICBO
VCB =30V, IE =0, TJ =150°C
VEB =4V, IC =0
Emitter Cut-off Current
IEBO
hFE
100
DC Current Gain
VCE =6V, IC =1mA
IC =50mA, IB =5mA
120
100
VCE(SAT)
200 mV
Collector-Emitter Saturation Voltage(Note)
1.5
2.2
pF
pF
TR1
Collector Capacitance
TR2
CC
fT
IE =ie = 0; VCB =12V; f = 1MHz
VCE =12V, IC =2mA, f =100MHz
MHZ
Transition Frequency
Note 1. Pulse test: tP ≤ 300 μs; δ ≤ 0.02.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R218-011.a
www.unisonic.com.tw
PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
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