PUMZ1_15 [UTC]

NPN/PNP GENERAL PURPOSE TRANSISTORS;


型号：	PUMZ1_15
厂家：	Unisonic Technologies
描述：	NPN/PNP GENERAL PURPOSE TRANSISTORS
文件：	总4页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

NPN/PNP GENERAL PURPOSE

TRANSISTORS

DESCRIPTION

The UTC PUMZ1 is a NPN/PNP transistor, specially used in

general purpose of switching and amplifying applications. Thus, two

NPN/PNP transistors are operated independently in an SOT-363

package.

FEATURES

* Low Current: 100mA (MAX.)

* Low Voltage: 40V (MAX.)

* Less Number of Components And Boardspace Required

* Halogen Free

SYMBOL

ORDERING INFORMATION

Ordering Number

PUMZ1G-AL6-R

Package

SOT-363

Packing

Tape Reel

MARKING

www.unisonic.com.tw

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QW-R218-011.a

PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

PIN CONFIGURATION

PIN DESCRIPTION

PIN NO.

1,4

PIN NAME

Emitter

DESCRIPTION

TR2; TR1

2,5

3,6

Base

Collector

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PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Per Transistor; For The PNP Transistor With Negative Polarity

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Peak Collector Current

Peak Base Current

V_CBO

V_CEO

V_EBO

I_C

100

°C

I_CM

200

I_BM

200

T_A≤ 25°C

200

Total Power Dissipation

P_D

T_A≤ 25°C (Note2)

300

Junction Temperature

Storage Temperature

T_J

150

T_STG

T_OPR

-65 ~ +150

°C

Ambient Operating Temperature

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on an FR4 printed-circuit board.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

416

UNIT

K/W

Junction to Ambient

θ_JA

Note: Device mounted on an FR4 printed-circuit board.

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS

Per Transistor; For The PNP Transistor With Negative Polarity

MIN TYP MAX UNIT

V_CB=30V, I_E=0

100

μA

Collect Cut-off Current

I_CBO

V_CB=30V, I_E=0, T_J=150°C

V_EB=4V, I_C=0

Emitter Cut-off Current

I_EBO

h_FE

100

DC Current Gain

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

120

100

V_CE(SAT)

200 mV

Collector-Emitter Saturation Voltage(Note)

1.5

2.2

TR1

Collector Capacitance

TR2

C_C

f_T

I_E=i_e= 0; V_CB=12V; f = 1MHz

V_CE=12V, I_C=2mA, f =100MHz

MH_Z

Transition Frequency

Note 1. Pulse test: t_P≤ 300 μs; δ ≤ 0.02.

UNISONIC TECHNOLOGIES CO., LTD

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PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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