PZTA42 [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | PZTA42 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTCPZTA42/43
NPNEPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors,
designed for telephone switch and high voltage
switch.
3
2
1
FEATURES
*Collector-Emitter voltage:
VCEO=300V(UTC PZTA42)
VCEO=200V(UTC PZTA43)
*High current gain
4
*Complement to UTC PZTA92/93
*Collector Power Dissipation:
Pc(max)=1000mW
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
UTC PZTA42
UTC PZTA43
Collector-Emitter Voltage
VCBO
300
200
V
UTC PZTA42
UTC PZTA43
VCEO
300
200
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
VEBO
Pc
Ic
Tj
TSTG
6
V
mW
mA
°C
1000
500
150
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
UTC PZTA42
SYMBOL
BVCBO
TEST CONDITIONS
MIN TYP MAX UNIT
Ic=100µA,IE=0
300
200
V
UTC PZTA43
Collector-Emitter Breakdown Voltage
BVCEO
BVEBO
Ic=1mA,IB=0
UTC PZTA42
300
200
6
V
V
UTC PZTA43
Emitter-Base Breakdown Voltage
IE=100µA,Ic=0
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R207-005,B
UTCPZTA42/43
NPNEPITAXIAL SILICON TRANSISTOR
PARAMETER
Collector Cut-Off Current
UTC PZTA42
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
ICBO
VCB=200V,IE=0
VCB=160V,IE=0
100
100
nA
nA
UTC PZTA43
Emitter Cut-Off Current
IEBO
hFE
UTC PZTA42
VBE=6V,Ic=0
VBE=4V,Ic=0
100
100
UTC PZTA43
DC Current Gain(note)
VCE=10V,Ic=1mA
VCE=10V,Ic=10mA
VCE=10V,Ic=30mA
Ic=20mA,IB=2mA
Ic=20mA,IB=2mA
VCE=20V,Ic=10mA,
f=100MHz
80
80
80
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCE(sat)
VBE(sat)
fT
0.2
0.90
V
V
MHz
50
Collector Base Capacitance
UTCPZTA42
UTCPZTA43
Ccb
VCB=20V,IE=0
f=1MHz
3
4
pF
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
Fig.2 Saturation Voltage
3
1
10
10
Ic=10*I
B
VCE=10V
VBE(sat)
2
0
10
10
-1
10
1
10
VCE(sat)
0
-2
10
10
0
1
2
-1
0
1
2
3
10
10
10
10
10
10
10
10
Collector current, Ic(mA)
Collector current, Ic(mA)
Fig.4 Current Gain
Bandwidth product
Fig.3 Capacitance
2
10
3
10
VCE=20V
I
E
=0
f=1MHz
1
2
10
10
1
10
-1
0
1
2
10
0
1
2
10
10
10
10
10
10
Collector-Base voltage(V)
Collector current, Ic(mA)
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R207-005,B
UTCPZTA42/43
NPNEPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R207-005,B
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