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PZTA44_12 [UTC]

NPN HIGH VOLTAGE TRANSISTOR; NPN高压晶体管
PZTA44_12
型号： PZTA44_12
厂家： Unisonic Technologies    Unisonic Technologies
描述：

NPN HIGH VOLTAGE TRANSISTOR
NPN高压晶体管

晶体 晶体管 高压
文件： 总4页 (文件大小：112K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
PZTA44/45  
NPN SILICON TRANSISTOR  
NPN HIGH VOLTAGE  
TRANSISTOR  
„ FEATURES  
* Collector-emitter voltage:  
VCEO=400V(PZTA44)  
VCEO=350V(PZTA45)  
* Collector current up to 300mA  
* Complement to PZTA94/93  
APPLICATION  
„
* Telephone switching  
* High voltage switch  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Lead Free  
1
B
B
2
C
C
3
E
E
PZTA44L-AA3-R  
PZTA45L-AA3-R  
PZTA44L-AA3-R  
PZTA45L-AA3-R  
SOT-223  
SOT-223  
Tape Reel  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1of 4  
QW-R207-003.C  
PZTA44/45  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS  
„
(TA=25°C, unless otherwise specified)  
SYMBOL RATINGS  
VCBO  
PARAMETER  
UNIT  
V
PZTA44  
PZTA45  
PZTA44  
PZTA45  
500  
400  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
400  
V
VCEO  
VEBO  
IC  
350  
V
Emitter-Base Voltage  
Collector Current  
6
V
300  
mA  
W
°C  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
PC  
1.2  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS  
„
(TJ =25°C, unless otherwise specified)  
SYMBOL TEST CONDITIONS MIN  
BVCBO IC=100μA, IB=0  
PARAMETER  
TYP MAX UNIT  
PZTA44  
PZTA45  
PZTA44  
PZTA45  
500  
400  
400  
350  
6
V
V
V
V
V
Collector-Base Breakdown  
Voltage  
Collector-Emitter Breakdown  
Voltage  
BVCEO IC=1mA, IB=0  
Emitter-Base Breakdown Voltage  
BVEBO IE=100μA, IC=0  
PZTA44  
VCB=400V, IE=0  
0.1  
0.1  
0.5  
0.5  
0.1  
μA  
μA  
μA  
μA  
μA  
Collector Cut-OFF Current  
ICBO  
PZTA45  
PZTA44  
PZTA45  
VCB=320V, IE=0  
VCE=400V, IB=0  
ICES  
Collector Cut-OFF Current  
Emitter Cut-OFF Current  
VCE=320V, IB=0  
IEBO  
VEB=4V, IC=0  
VCE=10V, IC=1mA  
VCE=10V, IC=10mA  
VCE=10V, IC=50mA  
VCE=10V, IC=100mA  
IC=1mA, IB=0.1mA  
40  
50  
45  
40  
240  
DC Current Gain (Note)  
hFE  
0.4  
0.5  
V
Collector-Emitter Saturation Voltage  
VCE(SAT) IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
V
V
V
0.75  
0.75  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VBE(SAT) IC=10mA, IB=1mA  
fT  
VCE=20V,Ic=10mA, f=100MHz  
VCB=20V, IE=0, f=1MHz  
50  
MHz  
pF  
COB  
7
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%  
NISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R207-003.C  
www.unisonic.com.tw  
PZTA44/45  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
„
Fig.1 DC Current Gain  
Fig.2 Turn-ON Switching Time  
1
10  
140  
120  
100  
80  
VCE=150V  
Ic/IB=10  
TA=25°C  
VCE=10V  
V
BE(OFF)=4V  
0
60  
10  
40  
20  
0
tF  
-20  
-40  
tD  
-1  
10  
0
1
2
3
4
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, IC(mA)  
Collector Current, IC (mA)  
Fig.4 Capacitance  
Fig.3 Turn-OFF Switching Time  
2
3
10  
VCE=150V  
IC/IB=10  
10  
TA=25°C  
1
2
10  
CIB  
10  
tS  
0
10  
1
10  
tF  
COB  
-1  
0
10  
10  
-1  
10  
0
1
2
3
10  
0
1
2
10  
10  
10  
10  
10  
10  
Collector Voltage (V)  
Collector Current, Ic (mA)  
Fig.5 ON Voltage  
Fig.6 Collector Saturation Region  
1.0  
0.8  
0.5  
0.4  
TA=25°C  
IC=1mA  
VBE(SAT),Ic/IB=10  
IC=10mA  
IC=50mA  
0.6  
0.3  
0.2  
VBE(ON),VCE=10V  
0.4  
0.2  
0
VCE(SAT),Ic/IB=10  
0.1  
TA=25°C  
0
-1  
10  
0
1
2
3
1
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic (mA)  
Base Current, IB ( A)  
NISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R207-003.C  
www.unisonic.com.tw  
PZTA44/45  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
„
Fig.7 High Frequency Current Gain  
Fig.8 Safe Operating Area  
2
4
10  
10  
VCE=10V  
f=10MHz  
TA=25°C  
Valid Duty  
Cycle<10%  
1ms  
3
10  
1
1s  
0.1ms  
10  
2
10  
0
10  
1
10  
PZTA44  
-1  
10  
0
10  
-1  
10  
0
1
2
3
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic (mA)  
Collector-Emitter Voltage, VCE(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
NISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R207-003.C  
www.unisonic.com.tw  

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