SB2202-P-TN3-R [UTC]

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN;


型号：	SB2202-P-TN3-R
厂家：	Unisonic Technologies
描述：	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN 开关晶体管
文件：	总4页 (文件大小：55K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD.

SB2202

PNP EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW

VOLTAGE TRANSISTOR

ꢀ

DESCRIPTION

The UTC SB2202 is a medium power low voltage transistor,

designed for audio power amplifier, DC-DC converter and

voltage regulator.

ꢀ

FEATURES

*High current output up to 3A

*Low saturation voltage

TO-252

* Pb-free plating product number: SB2202L

ꢀ

PIN CONFIGURATION

PIN NO.

PIN NAME

Base

Collector

Emitter

ꢀ ORDERING INFORMATION

Order Number

Package

Packing

Normal

Lead free

SB2202-TN3-R SB2202L-TN3-R

SB2202-TN3-T SB2202L-TN3-T

TO-252

Tape & Reel

Tube

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QW-R209-020,A

SB2202

PNP EPITAXIAL SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_B

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

-40

-30

-5

-0.6

I_C

-3

Collector Current

PULSE

Tc=25°C

Ta=25°C

I_CM

-7

Collector Dissipation

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

°C

T_STG

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

V_CE(sat)

V_BE(sat)

I_CBO

TEST CONDITIONS

I_C=-2A, I_B= -0.2A

MIN TYP MAX UNIT

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-Off Current

-0.3

-1.0

-0.5

-2.0

I_C= -2A, I_B= -0.2A

V_CB= -30V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB= -3V, I_C=0

h_FE1

h_FE2

V_CE= -2V, I_C= -20mA

100

200

DC Current Gain(Note 1)

V_CE= -2V, I_C= -1A

400

Current Gain Bandwidth Product

Output Capacitance

f_T

V_CE= -5V, I_C= -0.1A

MHz

C_ob

V_CB= -10V, I_E=0, f=1MHz

Note 1: Pulse test: PW<300µs, Duty Cycle<2%

ꢀ

CLASSIFICATION OF hFE2

RANK

RANGE

100 ~ 200

160 ~ 320

200 ~ 400

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SB2202

PNP EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

operating areas

Derating curve of safe

Static characteristics

150

100

1.6

-I_B9mA

-I_B=8mA

-I_B=7mA

1.2

0.8

-I_B=6mA

-I_B=5mA

-I_B=4mA

-I_B=3mA

-I_B=2mA

0.4

-I_B=1mA

-40

80 120 150

-Collector

(

)

-Emitter Voltage,(V)

Case Temperature,T_C

℃

Power derating

capacitance

I_E=0

Collector output

10³

f=1MHz

10²

10¹

10⁰

-³

10⁰

-40

120 150

Case Temperature, T_C(℃)

-Collector- Base Voltage(V)

Current gain-

bandwidth product

V_CE=5V

Safe operating area

I_c(max), Pulse

I_{c (max)}, DC

10⁰

IB_B=8mA

10 ¹

10^-2

10⁰

Emitter Voltage

Collector Current, I_C(A)

Collector-

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SB2202

PNP EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS (cont.)

DC current gain

Saturation Voltage

10³

10²

10¹

-2V

10⁴

V_CE=

V_BE

( sat)

10³

10²

V (sat)

10¹

10⁰

10¹

10²

10³

10⁴

10⁰

10¹

10²

10³

10⁴

-Collector current, I

_C(mA)

-Collector Current, I_C(mA)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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