TF2123L-E5-AE3-R [UTC]
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236,;型号: | TF2123L-E5-AE3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, 放大器 光电二极管 晶体管 |
文件: | 总4页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TF2123
N-CHANNEL JFET
N-CHANNEL JFET CAPACITOR
MICROPHONE APPLICATIONS
DESCRIPTION
The UTC TF2123 uses advanced trench technology to provide
excellent RDS (ON), low gate charge and operation with low gate
voltages. This device is suitable for use in capacitor microphone
applications.
FEATURES
*Suited for use in audio, telephone capacitor microphones.
*Good voltage characteristic.
*Good transient characteristic.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
S
S
S
2
D
D
D
3
TF2123L-xx-AE3-R
TF2123L-xx-AN3-R
TF2123L-xx-AQ3-R
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
SOT-23
SOT-523
SOT-723
G
G
G
Tape Reel
Tape Reel
Tape Reel
MARKING
TF2123-E3
TF2123-E4
E4
TF2123-E5
E3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-106.B
TF2123
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS
( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
-20
UNIT
V
Gate Drain Voltage
Gate Current
VGDO
IG
10
mA
mA
mW
°С
Drain Current
ID
10
Power Dissipation
Junction Temperature
Storage Temperature
PD
100
TJ
150
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
BVGDO
TEST CONDITIONS
IG=-100μA
MIN TYP MAX UNIT
Gate Drain Breakdown Voltage
Gate Source Cut off Voltage
-20
V
VGS(OFF)
VDS=2V, ID=1μA
TF2123-E3
-0.38
V
100
150
210
170
270
350
μA
μA
μA
μA
μA
μA
mS
pF
dB
dB
dB
Zero-Gate Voltage Drain Current
Drain Current
IDSS
VDS=2V, VGS=0V
TF2123-E4
TF2123-E5
IDSS=100μA
IDSS=250μA
IDSS=350μA
98
244
337
1.43
5.0
VDD=2V, RL=2.2kΩ,
ID
Cg=5pF
Forward Transfer Admittance
Input Capacitance
lyfsl
CISS
VDS=2V, VGS=0V
VDS=2, VGS=0, f=1MHz
I
DSS=100μA
0.1
VDD=2V, RL=2.2kΩ,
Cg=5pF, f=1kHz,
VIN=10mV
Voltage Gain
IDSS=250μA
IDSS=350μA
1.95
2.25
GV
VIN=10mV, RL=2.2kΩ, Cg=5pF,
f=1kH, VDD=2V to1.5V
Delta Voltage Gain
-0.5
-0.2
dB
dB
∆GV
∆GV(f)
VNO
VIN=10mV, RL=2.2kΩ, Cg=5pF,
Frequency Characteristic
Output Noise Voltage
Total Harmonic distortion
V
DD=2V, f=1kHz to 110kHz
RL=1kΩ
RL=2.2kΩ
DD=2V, RL=2.2kΩ, Cg=5pF, f=1kHz,
VIN=50mV
-107
-102
dB
dB
VDD=2V, Cg=5pF,
A-curve filter
V
THD
0.9
%
CLASSIFICATION OF IDSS
RANK
E3
E4
E5
210-350
RANGE
100-170
150-270
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-106.B
www.unisonic.com.tw
TF2123
N-CHANNEL JFET
TEST CIRCUIT
(TA=25C)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-106.B
www.unisonic.com.tw
TF2123
N-CHANNEL JFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-106.B
www.unisonic.com.tw
相关型号:
TF2123L-E5-AN3-R
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET,
UTC
TF2123L-E5-AQ3-R
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET,
UTC
TF212G-F4-A3C-R
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
TF212G-F4-AC3-R
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
TF212G-F4-AN3-R
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
TF212G-F5-AC3-R
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
TF212G-F5-AN3-R
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, HALOGEN FREE PACKAGE-3
UTC
©2020 ICPDF网 联系我们和版权申明