TF212G-XX-AC3-R [UTC]

CAPACITOR MICROPHONE APPLICATIONS; 电容话筒的应用
TF212G-XX-AC3-R
型号: TF212G-XX-AC3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

CAPACITOR MICROPHONE APPLICATIONS
电容话筒的应用

文件: 总3页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
TF212  
Preliminary  
JFET  
CAPACITOR MICROPHONE  
APPLICATIONS  
„
DESCRIPTION  
The UTC TF212 uses advanced trench technology to provide  
excellent RDS (ON), low gate charge and operation with low gate  
voltages. This device is suitable for use in capacitor microphone  
applications.  
FEATURES  
„
* Suited for use in audio, telephone capacitor microphones.  
* Good voltage characteristic.  
* Good transient characteristic.  
* Halogen Free  
„
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
Package  
Packing  
1
S
S
S
2
D
D
D
3
TF212G-xx-AC3-R  
TF212G-xx-A3C-R  
TF212G-xx-AN3-R  
SOT-113  
SOT-113S  
SOT-523  
G
G
G
Tape Reel  
Tape Reel  
Tape Reel  
„
MARKING  
TF212-F4  
TF212-F5  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-097.b  
TF212  
Preliminary  
JFET  
ABSOLUTE MAXIMUM RATINGS  
„
( Ta=25°С, unless otherwise specified )  
PARAMETER  
SYMBOL  
RATING  
UNIT  
V
Gate Drain Voltage  
Gate Current  
VGDO  
IG  
-20  
10  
mA  
mA  
mW  
°С  
Drain Current  
ID  
1
Power Dissipation  
Junction Temperature  
Storage Temperature  
PD  
100  
TJ  
150  
TSTG  
-55~+150  
°С  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS  
„
(Ta=25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVGDO  
VGS(OFF)  
IDSS  
TEST CONDITIONS  
IG=-100μA  
MIN TYP MAX UNIT  
Gate Drain Breakdown Voltage  
Gate Source Cut off Voltage  
Drain Current  
-20  
V
V
VDS=5V, ID=1μA  
-0.2 -0.6 -1.2  
VDS=5V, VGS=0  
140  
1
350  
μA  
mS  
pF  
pF  
dB  
dB  
dB  
MΩ  
Forward Transfer Admittance  
Input Capacitance  
lYFSl  
CISS  
VDS=2V, VGS=0, f=1KHz  
VDS=5V, VGS=0, f=1MHz  
VDS=5V, VGS=0, f=1MHz  
VIN=10mV, f=1KHz  
VIN=10mV,f=1KHz, VCC=4.5V1.5V  
f=1KHz to 110Hz  
f=1KHz  
1.2  
3.5  
0.65  
-3  
Output Capacitance  
CRSS  
Voltage Gain  
GV  
GVV  
GVf  
ZIN  
Reduced Voltage Characteristic  
Frequency Characteristic  
Input Resistance  
-1.2 -3.5  
-1  
25  
Output Resistance  
ZO  
f=1KHz  
700  
1
Total Harmonic distortion  
Output Noise Voltage  
THD  
VNO  
VIN=30mV, f=1KHz  
VIN=0  
%
-110 dB  
CLASSIFICATION OF IDSS  
„
RANK  
F4  
F5  
210-350  
RANGE  
140-240  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-097.b  
www.unisonic.com.tw  
TF212  
Preliminary  
JFET  
TEST CIRCUIT  
„
(Ta=25°C)  
VCC=4.5V  
CC=1.5V  
1K  
V
15pF  
33μF  
+
OSC  
A
B
V
THD  
VTVM  
1KΩ  
FOR OUTPUT  
IMPEDANCE  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-097.b  
www.unisonic.com.tw  

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