TIP102G-TA3-T [UTC]

Power Bipolar Transistor;
TIP102G-TA3-T
型号: TIP102G-TA3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor

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UNISONIC TECHNOLOGIES CO., LTD  
TIP102  
NPN SILICON TRANSISTOR  
NPN EPITAXIAL TRANSISTOR  
„
DESCRIPTION  
The UTC TIP102 is designed for using in general purpose  
amplifier and switching applications.  
„
FEATURES  
* Low VCE(SAT)  
* High Current Gain  
* Complementary to TIP107  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
2
C
C
3
E
E
TIP102L-TA3-T  
TIP102L-TN3-R  
TIP102G-TA3-T  
TIP102G-TN3-R  
TO-220  
TO-252  
Tube  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R209-025.B  
TIP102  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (TC=25°C)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
100  
100  
5
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
V
VEBO  
V
DC  
8
A
IC  
ICP  
IB  
Collector Current  
Pulse  
15  
A
A
Base Current  
DC  
1
TO-220  
80  
Collector Power Dissipation  
PC  
W
TO-252  
41  
Junction Temperature  
Storage Temperature  
TJ  
150  
°C  
°C  
TSTG  
-65~+150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IC=30mA, IB=0A  
MIN TYP MAX UNIT  
V
Collector-Emitter Sustaining Voltage  
Collector-Base Cut-Off Current  
Collector-Emitter Cut-Off Current  
Emitter-Base Cut-Off Current  
ON CHARACTERISTICS  
VCEO(SUS)  
ICBO  
100  
µA  
µA  
mA  
V
V
V
CB=100V, IE=0A  
50  
50  
2
ICEO  
CE=50V, IB=0A  
EB=5V, IC=0A  
IEBO  
hFE1  
hFE2  
V
CE=4V, IC=3A  
CE=4V, IC=8A  
1000  
200  
20000  
DC Current Gain  
V
V
V
V
IC=3A, IB=6mA  
IC=8A, IB=80mA  
VCE=4V, IC=8A  
2
Collector-Emitter Saturation Voltage  
VCE(SAT)  
VBE(ON)  
2.5  
2.8  
Base-Emitter ON Voltage  
SMALL-SIGNAL CHARACTERISTICS  
Output Capacitance  
COB  
pF  
VCB=10V, IE=0A, f=0.1MHZ  
300  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R209-025.B  
TIP102  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGES O., LTD  
3 of 4  
www.unisonic.com.tw  
QW-R209-025.B  
TIP102  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R209-025.B  
www.unisonic.com.tw  

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