TIP102TU [ONSEMI]
8.0 A, 100 V NPN Darlington Bipolar Power Transistor;
| 型号： | TIP102TU |
| 厂家： | 
ONSEMI |
| 描述： | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor 局域网 晶体管 |
| 文件： | 总7页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2014
TIP102
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP107
Equivalent Circuit
C
B
TO-220
1
R1
R2
1.Base 2.Collector 3.Emitter
E
R 1 ≅ 10 kΩ
R 2 ≅ 0.6 kΩ
Ordering Information
Part Number
TIP102
Top Mark
TIP102
Package
Packing Method
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Bulk
Rail
TIP102TU
TIP102
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
100
100
V
5
V
8
A
ICP
15
1
A
IB
A
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
-65 to 150
© 2001 Fairchild Semiconductor Corporation
TIP102 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Collector Dissipation (TA = 25°C)
Collector Dissipation (TC = 25°C)
2
PC
W
80
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
IC = 30 mA, IB = 0
VCE = 50 V, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
Min.
Max.
Unit
V
VCEO(sus) Collector-Emitter Sustaining Voltage
100
ICEO
ICBO
IEBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
50
2
μA
μA
mA
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 8 A
IC = 3 A, IB = 6 mA
IC = 8 A, IB = 80 mA
VCE = 4 V, IC = 8 A
1000
200
20000
hFE
DC Current Gain
2.0
2.5
2.8
VCE(sat) Collector-Emitter Saturation Voltage
V
VBE(on)
Cob
Base-Emitter On Voltage
Output Capacitance
V
VCB = 10 V, IE = 0,
f = 0.1 MHz
200
pF
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
© 2001 Fairchild Semiconductor Corporation
TIP102 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
10k
5
IB = 1mA
VCE = 4V
0.9mA
4
0.8mA
3
IB = 300μA
1k
IB = 200μA
2
1
IB = 100μA
100
0.1
0
0
1
2
3
4
5
1
10
Ic[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10k
10k
1k
100
10
1
IC = 500 IB
VBE(sat)
1k
VCE(sat)
100
0.1
0.1
1
10
100
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
120
100
80
60
40
20
0
100
1ms
10
1
TIP100
0.1
TIP101
TIP102
0.01
0.1
0
25
50
75
100
125
150
175
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2001 Fairchild Semiconductor Corporation
TIP102 Rev. 1.1.0
www.fairchildsemi.com
3
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2001 Fairchild Semiconductor Corporation
TIP102 Rev. 1.1.0
www.fairchildsemi.com
4
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Rev. I72
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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