TIP107G-T6S-K [UTC]

Power Bipolar Transistor;


型号：	TIP107G-T6S-K
厂家：	Unisonic Technologies
描述：	Power Bipolar Transistor 局域网开关晶体管
文件：	总4页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

TIP107

PNP SILICON TRANSISTOR

PNP EPITAXIAL TRANSISTOR



DESCRIPTION

The UTC TIP107 is designed for using in general purpose

amplifier and switching applications.



FEATURES

* Low V_CE(SAT)

* High Current Gain

* Complementary to TIP102



ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free

Halogen Free

TIP107L-TA3-T

TIP107L-TF3-T

TIP107L-TN3-R

TIP107L-T60-K

TIP107L-T6S-K

TIP107G-TA3-T

TIP107G-TF3-T

TIP107G-TN3-R

TIP107G-T60-K

TIP107G-T6S-K

TO-220

TO-220F

TO-252

TO-126

TO-126S

Tube

Tape Reel

Bulk

Note: Pin Assignment: C: Collector

B: Base E: Emitter



MARKING

TO-220 / TO-220F / TO-252

TO-126 / TO-126S

www.unisonic.com.tw

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QW-R203-023.D

TIP107

PNP SILICON TRANSISTOR

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ABSOLUTE MAXIMUM RATING (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

-100

-5

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CES

V_EBO

-8

I_C

I_CP

I_B

Collector Current

Base Current

Pulse

-15

-1

TO-220/TO-220F

TO-252

Collector Power Dissipation

P_C

TO-126/TO-126S

Junction Temperature

Storage Temperature

T_J

150

°C

T_STG

-65~+150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CEO(SUS)

I_CBO

TEST CONDITIONS

I_C=-30mA, I_B=0A

MIN TYP MAX UNIT

Collector-Emitter Sustaining Voltage

Collector-Base Cut-Off Current

Collector-Emitter Cut-Off Current

Emitter-Base Cut-Off Current

ON CHARACTERISTICS

-100

µA

V_CB=-100V, I_E=0A

V_CE=-50V, I_B=0A

V_EB=-5V, I_C=0A

-50

-2

I_CEO

I_EBO

h_FE1

h_FE2

V_CE=-4V, I_C=-3A

V_CE=-4V, I_C=-8A

I_C=-3A, I_B=-6mA

I_C=-8A, I_B=-80mA

V_CE=-4V, I_C=-8A

1000

200

20000

DC Current Gain

-2

Collector-Emitter Saturation Voltage

V_CE(SAT)

V_BE(ON)

-2.5

-2.8

Base-Emitter ON Voltage

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

C_ob

V_CB=-10V, I_E=0A, f=0.1MHZ

300

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-023.D

www.unisonic.com.tw

TIP107

PNP SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-023.D

www.unisonic.com.tw

TIP107

PNP SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R203-023.D

www.unisonic.com.tw

相关型号：

TIP107G-TA3-T

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220, 3 PIN